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    GP 113 Search Results

    GP 113 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    P3LP-157L Coilcraft Inc Low Pass Filter, 150MHz, ROHS COMPLIANT PACKAGE-3 Visit Coilcraft Inc
    P3LP-604L Coilcraft Inc Low Pass Filter, 0.6MHz, ROHS COMPLIANT PACKAGE-3 Visit Coilcraft Inc
    P7LP-155L Coilcraft Inc Low Pass Filter, 1.5MHz, ROHS COMPLIANT PACKAGE-9 Visit Coilcraft Inc
    P7LP-507 Coilcraft Inc Low Pass Filter, 500MHz, SIP-9 Visit Coilcraft Inc Buy
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    GP 113 Price and Stock

    Samtec Inc RF316-13GP1-13GP1-2362

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    Samtec Inc RF316-13GP1-13GP1-0305

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    Samtec Inc RF316-13GP1-13GP1-1829

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    Samtec Inc RF316-13GP1-13GP1-2185

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    Samtec Inc RF316-13GP1-13GP1-1016

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    GP 113 Datasheets Context Search

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    mask rom

    Abstract: No abstract text available
    Text: 7542 Group Standard Characteristics General Purpose M37542M2/M4-XXXFP/SP/GP/HP, M37542F8FP/SP/GP/HP, M37542F4FP/SP/GP Standard Characteristics Example Standard characteristics described below are just examples of the 7542 Group's characteristics and are not guaranteed.


    Original     		PDF M37542M2/M4-XXXFP/SP/GP/HP, M37542F8FP/SP/GP/HP, M37542F4FP/SP/GP mask rom

    E62806

    Abstract: KT19 KT21 1 Gp 36 kt26 kulka 600 terminal block
    Text: Double Row Terminal Blocks 100 Series Kulka 670A GP Series 150 Volts AC/DC Class C 106 / 670A GP 06 Specifications: Base, General Purpose Phenolic, 150oC Closed Back Design Screws, #6-32 Binder Head, Phil-Slot, Steel Terminals, Plated Brass 1-36 Poles


    Original     		PDF 150oC E62806 KT19 KT21 1 Gp 36 kt26 kulka 600 terminal block

    Untitled

    Abstract: No abstract text available
    Text: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-bit Microcontrollers and Digital Signal Controllers (up to 512 KB Flash and 52 KB SRAM) with High-Speed PWM, USB, and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture


    Original     		PDF dsPIC33EPXXX PIC24EPXXX 16-bit 32-bit dsPIC33E/PIC24Ena DS70616F-page

    DS70571

    Abstract: dsPIC33e family Reference Manual dc 12v to ac 220v simple inverter circuit schema DSPIC33EP512MU810 ieee embedded system projects free DS70356 DS70609 control 220V using Parallel port Fuses class H dspic33ep256mu806
    Text: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-bit Microcontrollers and Digital Signal Controllers (up to 512 KB Flash and 52 KB SRAM) with High-Speed PWM, USB, and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture


    Original     		PDF dsPIC33EPXXX PIC24EPXXX 16-bit 32-bit dsPIC33E/PIC24E DS70616F-page DS70571 dsPIC33e family Reference Manual dc 12v to ac 220v simple inverter circuit schema DSPIC33EP512MU810 ieee embedded system projects free DS70356 DS70609 control 220V using Parallel port Fuses class H dspic33ep256mu806

    100AH

    Abstract: 100AH battery charging 100ah battery 20HR 121000 GP Batteries gp 332
    Text: Powered by GP 121000 12V 100Ah GP 121000 is a general purpose battery up to 5 years in standby service or more than 260 cycles at 100% discharge in cycle service. As with all CSB batteries, all are rechargeable, highly efficient, leak proof and maintenance free.


    Original     		PDF 100Ah 100AH 100AH battery charging 100ah battery 20HR 121000 GP Batteries gp 332

    GP12400

    Abstract: 20HR e88637 GP124
    Text: Powered by GP 12400 12V 40Ah GP 12400 is a general purpose battery up to 5 years in standby service or more than 260 cycles at 100% discharge in cycle service. As with all CSB batteries, all are rechargeable, highly efficient, leak proof and maintenance free.


    Original     		PDF For00 GP12400 20HR e88637 GP124

    40Ah batteries

    Abstract: 20HR GP 948 gp 817 GP Batteries
    Text: R GP 12400 Specification 12V 40Ah GP 12400 is a general purpose battery up to 5 years in standby service or more than 260 cycles at 100% discharge in cycle service. As with all CSB batteries, all are rechargeable, highly efficient, leak proof and maintenance free.


    Original     		PDF 20hr-rate 75V/Cell) 40Ah batteries 20HR GP 948 gp 817 GP Batteries

    70616G

    Abstract: dsPIC33e family Reference Manual VDR Mu 503 DS70618 DS70571 DS70356 DS70609 DS70600 DSPIC33EP512MU810 DS70616
    Text: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-Bit Microcontrollers and Digital Signal Controllers with High-Speed PWM, USB and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture • 3.0V to 3.6V, -40ºC to +125ºC, DC to 60 MIPS


    Original     		PDF dsPIC33EPXXX PIC24EPXXX 16-Bit 32-bit dsPIC33E/PIC24E DS70616G-page 70616G dsPIC33e family Reference Manual VDR Mu 503 DS70618 DS70571 DS70356 DS70609 DS70600 DSPIC33EP512MU810 DS70616

    Untitled

    Abstract: No abstract text available
    Text: 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8182TB NOISE FIGURE, POWER GAIN vs. FREQUENCY • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V 24 • CIRCUIT CURRENT: ICC = 30 mA TYP at VCC = 3.0 V GP • POWER GAIN: GP = 21.5 dB TYP at f = 0.9 GHz


    Original     		PDF UPC8182TB 24-Hour

    MC101

    Abstract: No abstract text available
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40°C to +125°C, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


    Original     		PDF dsPIC33FJ16 dsPIC33FJ32 16-Bit 32-Kbyte 10-bit, 18-pin 44-pin dsPIC33F Code60-4-227-8870 MC101

    DS70207

    Abstract: DS70203 MPLAB PM3 circuit induction MOTOR SPEED CONtrol pwm pic DSPIC33FJ16MC101 DS70655 DS70202 DS70194 example dsPIC33fj16 DS70644
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-bit Digital Signal Controllers (up to 32 KB Flash and 2 KB SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


    Original     		PDF dsPIC33FJ16 dsPIC33FJ32 16-bit 10-bit, 18-pin 44-pin dsPIC33F 40-bit d8-366 DS70207 DS70203 MPLAB PM3 circuit induction MOTOR SPEED CONtrol pwm pic DSPIC33FJ16MC101 DS70655 DS70202 DS70194 example dsPIC33fj16 DS70644

    example dsPIC33fj16

    Abstract: DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD
    Text: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H


    Original     		PDF dsPIC33FJ16 dsPIC33FJ32 16-Bit 32-Kbyte 10-bit, 18-pin 44-pin dsPIC33F 40-Bit example dsPIC33fj16 DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD

    RD06HVF1

    Abstract: 100OHM RD06HVF1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING 1.3+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz 175MHz RD06HVF1 100OHM RD06HVF1-101

    RD06HHF1-101

    Abstract: mosfet HF amplifier RD06HHF1 RD 15 hf mitsubishi 10Turns RD06HHF
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-101 mosfet HF amplifier RD 15 hf mitsubishi 10Turns RD06HHF

    MAR 618 transistor

    Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET

    RD06HHF1

    Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-or RD06HHF1-101 RD06HHF 10TURNS 40gp0

    RD06HVF1

    Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFor Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE

    RD 15 hf mitsubishi

    Abstract: RD06HHF1-101 RD06HHF
    Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz RD06HHF1 30MHz RD06HHF1-101 Oct2011 RD 15 hf mitsubishi RD06HHF

    Common PCN Handset Specification Phase 2 v4.2

    Abstract: sim 300s gsm modem datasheet Common PCN Handset Specification v4.2 sim 300 GSM MODEM AT commands GSM0408 NITZ Siemens MC75 str 630 GSM 07.07 siemens 230 96
    Text: Wireless EDGE Modems MultiModem EDGE with Bluetooth Interface MTCBA-E-B MultiModem EDGE with Ethernet Interface (MTCBA-E-EN) MultiModem EDGE with GPS Functionality (MTCBA-E-GP) MultiModem EDGE (MTCBA-E) MultiModem EDGE with USB (MTCBA-E-U)


    Original     		PDF S000371B) Common PCN Handset Specification Phase 2 v4.2 sim 300s gsm modem datasheet Common PCN Handset Specification v4.2 sim 300 GSM MODEM AT commands GSM0408 NITZ Siemens MC75 str 630 GSM 07.07 siemens 230 96

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz RD06HVF1 175MHz

    RD06HVF1

    Abstract: fet transistor rf RF Transistor s-parameter vhf
    Text: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz RD06HVF1 175MHz RD06HVF1-101 Oct2011 fet transistor rf RF Transistor s-parameter vhf

    IN3492

    Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
    Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90


    OCR Scan     		PDF 3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r

    RF Power Modules

    Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
    Text: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32


    OCR Scan     		PDF BGY32 BGY33 BGY35 BGY36 BGY43 BGY46A BGY46B BGY47A BGY95A BGY95B RF Power Modules BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132

    24P2Q

    Abstract: No abstract text available
    Text: MITSUBISHI SOUND PROCESSOR ICs M51525P,FP,GP AUTO REVERSE PREAMPLIFIER WITH MUSIC SENSOR DESCRIPTION The M 51525 is a preamplifier IC developed fo r car audio systems. The IC, in additions to 2 channels o f high-gain, low-noise preamplifiers, has a lead-in


    OCR Scan     		PDF M51525P M51525 Iin20 Vth20 Vth21 24P2Q