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    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo ltĀ­ age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and


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    PDF IRF730 O-220) GlD273b