h11cx
Abstract: GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 H11C1 IN5060 diode GK 74 transistor
Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
|
Original
|
PDF
|
H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
E90700
H11C1
00V/400V
h11cx
GK transistor
in5060
SC146D
H11C
H11C3
gk 02 a 041
IN5060 diode
GK 74 transistor
|
h11cx
Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
|
Original
|
PDF
|
H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
E90700
H11C1
00V/400V
h11cx
GK transistor
PHOTO SCR definition
IN5060 diode
SC146D DATA SHEET
Photo SCR
H11C3
H11C5
H11C4
scr pins
|
Transistor GK 0.9
Abstract: GK transistor DIODE 11 gk H11C1 H11C1X H11C2 H11C2X H11C3 H11C3X H11C4X
Text: H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X H11C1, H11C2, H11C3, H11C4, H11C5, H11C6 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS
|
Original
|
PDF
|
H11C1X,
H11C2X,
H11C3X,
H11C4X,
H11C5X,
H11C6X
H11C1,
H11C2,
H11C3,
H11C4,
Transistor GK 0.9
GK transistor
DIODE 11 gk
H11C1
H11C1X
H11C2
H11C2X
H11C3
H11C3X
H11C4X
|
4302NG
Abstract: Magnus BMR ericsson
Text: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EAB/FC/P Maria Rosendahl Approved PKB 4302NG EAB/FC/P Maria PI Rosendahl 1 (1) (4) No. Checked MICHORG 001 1/1301 52-EN/LZT - BMR 659
|
Original
|
PDF
|
52-EN/LZT
4302NG
22-A114
22-A115
J-STD-020C
MIL-STD-202G
Magnus
BMR ericsson
|
Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification 2SD1615 Features World Standard Miniature Package. Low VCE sat VCE(sat) = 0.15 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V
|
Original
|
PDF
|
2SD1615
|
transistor smd marking gk
Abstract: GK marking SMD transistor GK transistor marking gk 2SD1615 transistor smd marking gm
Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1615 Features World Standard Miniature Package. Low VCE sat VCE(sat) = 0.15 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage
|
Original
|
PDF
|
2SD1615
transistor smd marking gk
GK marking SMD transistor
GK transistor
marking gk
2SD1615
transistor smd marking gm
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 Í Q MAY GK 7 + (1 ?
|
OCR Scan
|
PDF
|
2SK2744
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTR ONI CS INC MMBT2484 42E D GH 7 ^ b 4 1 4 S 000=1035 T m SM GK NPN EPITAXIAL SILICON TRANSISTOR •> " T ' Z l - O C i LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage
|
OCR Scan
|
PDF
|
MMBT2484
71b414S
D0lH03fe
|
SP3467QDB
Abstract: No abstract text available
Text: RAYTHEON/ SEMICONDUCTOR T4 RAYTHEO N. TSTYBbO OGOS SMH 7 SMALL SIGNAL TRANSISTORS p r o d u c t specificatio n s 7597360 d ÊTJ S E M IC O N D U C T O R 94D 05543 High Current, High Speed Switches D i-si-cs' Popular Types Description The GK is a platinum doped transistor.
|
OCR Scan
|
PDF
|
2N3467/JAN
2N3468/JAN
2N3762/JAN
2N3763/JAN
O-116)
14-Lead
54BSC
100BSC
SP3467QDB
|
TCA940N
Abstract: No abstract text available
Text: SGS-THOMSON ^ 7 # . ^]D gK(Q iLi(gir^(Q)^D(gi TDA1908 8W AUDIO AMPLIFIER The TDA1908 is a m onolithic integrated circuit in 12 lead quad in-line plastic package intended for low frequency power applications. The mounting is compatible w ith the old types TBA800, TBA810S, TCA830S and TCA940N.
|
OCR Scan
|
PDF
|
TDA1908
TDA1908
TBA800,
TBA810S,
TCA830S
TCA940N.
TCA940N
|
Untitled
Abstract: No abstract text available
Text: MICROCOUPLERS FOR HYBRID CIRCUITS m M C 0 2 2, M C 0 3 5, M C 074 n OPTOELECTRONIC PRODUCTS DIVISION FEATURES gk . • Variety of output circuits • Small size saves real estate • Guaranteed performance over full military tem perature range • Large thick film gold bonding pads
|
OCR Scan
|
PDF
|
TheMC022
MC035
MC074
MC012
MC013
MC035
MC074
MC022
MC099
|
GK transistor 42
Abstract: transistor FET cd 332 m
Text: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G
|
OCR Scan
|
PDF
|
MT-42
012inch)
GK transistor 42
transistor FET
cd 332 m
|
Untitled
Abstract: No abstract text available
Text: / I T S C S -1H 0 M S 0 N ^ 7 1 , [10 gK [l[L[I(gîœMÔ©i L6201 0.3Q DMOS FULL BRIDGE DRIVER ADVANCE DATA to 48V and e ffic ie n tly at high sw itching speeds. A ll the logic inputs are T T L , CMOS and fjtC com patible. Each channel (half-bridge o f the
|
OCR Scan
|
PDF
|
L6201
L6201
100ns
8BL6201-01
|
Dow Corning TC 1996
Abstract: 02e5 TCA 345 STM961-15
Text: _ _ S C S - T H O M S O N k7#s, M gK i[L[I(gïrCMDiES STM961-15 RF POWER MODULE DIGITAL CELLULAR APPLICATIONS L IN E A R PO W ER A M P L IF IE R 9 1 5 -9 6 0 MHz 26 V O LTS IN P U T /O U T P U T 50 OHM S P o u t = 4 2 dBm CW o r P E P G AIN = 30 dB PIN C O N N E C T IO N
|
OCR Scan
|
PDF
|
STM961-15
STM961
STM961-15
14nted
Dow Corning TC 1996
02e5
TCA 345
|
|
|
IC ST 201A
Abstract: avalanche transistors GA201 B200A
Text: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB200A GB201 GB201A FEATURES DESCRIPTION • • • • • The Unitrode N anosecond Thyristor Switch com bines the turn-on speed of logic level transistors with the high current sw itching capability inherent in SC R s. With
|
OCR Scan
|
PDF
|
GA200
GA200A
GA201
GA201A
GB200
GB200A
GB201
GB201A
GA/GB200
IC ST 201A
avalanche transistors
B200A
|
diode 944 lg
Abstract: B301A ga331 LT 943 diode 945 lg
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this
|
OCR Scan
|
PDF
|
GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
20nst
GA300,
diode 944 lg
B301A
ga331
LT 943
diode 945 lg
|
Untitled
Abstract: No abstract text available
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device
|
OCR Scan
|
PDF
|
GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
GA300,
GB300
|
B897
Abstract: No abstract text available
Text: Optoisolator Specifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES LIMÊTERS N. WIN MAX MAX 8 38 B 89 7 G2 REF 8 64 T h e H I 1C 1, H I 1C 2 a n d H I 1C3 a re g alliu m a rs e n id e , in fra r e d e m ittin g d io d e s co u p le d w ith lig h t activ ated s ilic o n c o n tro lle d
|
OCR Scan
|
PDF
|
H11C1,
H11C2,
H11C3
B897
|
Untitled
Abstract: No abstract text available
Text: TISP61CAP3 PROGRAMMABLE OVERVOLTAGE PROTECTOR C o p y rig h t 1997, Power Innovations Limited, UK SEPTEM BER 1994 - REVISED SEPTEM BER 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • Programmable Voltage Triggered SCR with high Holding Current • Transistor Buffered Inputs for Low
|
OCR Scan
|
PDF
|
TISP61CAP3
PE-60
|
st GK 12
Abstract: BY2202
Text: SCRs G A IO O Nuclear Radiation Resistant, Planar G A 1 0 2 FEATURES • Optimized for Radiation Resistance • Ful ly Characterized for “Worst Case" Design • Post Radiation Design Limits Specified • Passivated Planar Construction for Maximum Reliability and Parameter
|
OCR Scan
|
PDF
|
GA100
st GK 12
BY2202
|
br101
Abstract: GK transistor 72
Text: BR101 J V_ SILICON CONTROLLED SWITCH The BR101 is a planar p-n-p-n sw itch in a TO -72 m etal package, intended fo r tim e base circ u its and o th e r television applications. It is also suitable as trigger device fo r th y ris to rs . It is an integrated p-n-p/
|
OCR Scan
|
PDF
|
BR101
BR101
GK transistor 72
|
B589
Abstract: No abstract text available
Text: KST5179 NPN EPITAXIAL SILICON TRANSISTOR RF AM PLIFIER TRAN SISTO R SO T-23 ABSO LU TE MAXIMUM RATINGS TA=25t Characteristic Collector-Base Voltage Colleclor-Emitter Vottage Emitter-Base Voltage Collector Current Collector Dissipation (T*=25t;) Derate above 2 5 t
|
OCR Scan
|
PDF
|
KST5179
Vcs-10V,
200MHz
200MHz
B589
|
GK 243
Abstract: MPEH
Text: Optotsolator Specifications H11C4, H11C5, H11C6 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES MILLIMETERS MIN WAX MIN MAX T h e H 1 1 C 4 , H 1 1 C 5 a n d H 1 1 C 6 a re g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e s c o u p le d w ith lig h t a ctiv ate d silic o n
|
OCR Scan
|
PDF
|
H11C4,
H11C5,
H11C6
GK 243
MPEH
|
AT3904
Abstract: raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209
Text: RAYTHEON/ SEMICONDUCTOR 27E D • 7S^73bD DQDTBbT Raytheon Company Semiconductor Division S ■ 7^27-9*? Raytheon Transistor Dice Catalog I RAYTHEON/ SEMICONDUCTOR 27E D ■ TSTVBbO 0007370 1 ■ J-S7- 11 Features Shipping Formats ■ Wafer size 2'A inches, 3 inches
|
OCR Scan
|
PDF
|
AT328A
AT329A.
BCY17-34
AT3906.
AT3905
AT4125.
AT4126
75cl73b0
0DD7373
AT3904
raytheon transistor
AT3866A
BC177 pnp transistor
AT915
Raytheon AT3906
transistor eb 2030
AT720
AT918
at3209
|
