510-9314
Abstract: Millmax 124-13 510-9320 SWC 107 694-13
Text: PRECICONTACT to MILL-MAX Cross Reference List PRECICONTACT# AXP 13 085 TL A 72 BXP 16 175 TL A 23 CL XXX TL A 31 CNT XXX GH M 31 CNT XXX GH N 31 CNT XXX GH O 31 CNT XXX GH P 31 CNT XXX TL M 30 CNT XXX TL M 31 CNT XXX TL M 36 CNT XXX TL N 30 CNT XXX TL N 31
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410-93-2XX-10-001
510-9314
Millmax 124-13
510-9320
SWC 107
694-13
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GH-700
Abstract: GH-820 GH-600 GH-601
Text: Hall Sensors Gallium Arsenide GH Series Description The GH Series Hall sensors are four-terminal solid-state devices that produce an output voltage, VH , proportional to the product of the input current, I c , and the magnetic flux density, B. The GH-600 Hall sensor uses a lead strip
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GH-600
GH-601
GH-700
GH-820
Exte100"
478mm)
464mm)
051mm)
GH-700
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GH-700
Abstract: No abstract text available
Text: Gallium Arsenide GH Series Hall Sensors Description The GH Series Hall sensors are four-terminal solid-state devices that produce an output voltage, VH , proportional to the product of the input current, I c , and the magnetic flux density, B. The GH-600 Hall sensor uses a lead strip
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GH-600
GH-601
GH-700
GH-820
478mm)
464mm)
051mm)
GH-700
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Untitled
Abstract: No abstract text available
Text: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: [email protected] b PHOTO TRANSISTOR 光 電 晶 體 Rev: A Date: 2002/10/19 GH-309 Series Electro-Optical Characteristics: Code for parts Material GH-XXXXX Rise Time Fall Time BVceo Min V TN2469TK-09E
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GH-309
TN2469TK-09E
008inch)
000pcs)
350mm
300mm
105mm)
360mm
320mm
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Untitled
Abstract: No abstract text available
Text: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: [email protected] b INFRARED EMITTING DIODE 紅外線發射二極體 Rev: B Date: 2005-4-10 GH-309 Series Electro-Optical Characteristics: Code for parts GH-XXXXX Material ILFZ69TK-09E ISFF69TK-09E VF V
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GH-309
ILFZ69TK-09E
ISFF69TK-09E
008inch)
000pcs)
350mm
300mm
105mm)
360mm
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Untitled
Abstract: No abstract text available
Text: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: [email protected] b MINI TYPE LED LAMPS 小型化發光二極體指示燈 Rev: B Date: 2002/10/19 GH-5166-09 Multi-Color Series Electro-Optical Characteristics: Code for parts GH-XXXXX Lighting Color Material
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GH-5166-09
00TEL:
RS-481
2000pcs/Reel
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Untitled
Abstract: No abstract text available
Text: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: [email protected] b MINI TYPE LED LAMPS 小型化發光二極體指示燈 Rev: C Date:2005/4/8 GH-5166-09 Single-Color Series Electro-Optical Characteristics: Code for parts GH-XXXXX Lighting Color Material
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GH-5166-09
RQ0966TC-09E
OV0966TC-09E
YU0966TC-09E
GB0966TC-09J
G31466TC-09H
RS-481
2000pcs/Reel
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Untitled
Abstract: No abstract text available
Text: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: [email protected] b MINI TYPE LED LAMPS 小型化發光二極體指示燈 Rev: C Date: 2005-4-9 GH-5166-09 Full-Color Series Electro-Optical Characteristics: Code for parts GH-XXXXX WZE766TA-09E WZE566TA-09H
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GH-5166-09
RS-481
2000pcs/Reel
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GH-701
Abstract: No abstract text available
Text: Gallium Arsenide GH-701 GH-701Hall sensor is a four terminal solid-state device that produces an output voltage, V H, proportional to the product of the input current, I c , and the magnetic flux density, B. The composition is made of Gallium Arsenide GaAs encapsulated in a surface mount package.
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GH-701
GH-701Hall
000pcs
GH-701
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GH-038
Abstract: photo coupler specification high current igbt driver AC2500 SANREX igbt driver driver circuit design for IGBT module igbt gate driver peak photo coupler
Text: HYBRID GATE DRIVER IC FOR IGBT GH-038 SanRex GH-038 is Hybrid Gate Driver IC for IGBT. ● High Voltage isolation by Photo Coupler to drive IGBT up to dual 600V, 300A module ● Operate with single power source ● Support to high-density system design ● Built-in photo coupler with resistor（330Ω）
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GH-038
GH-038
resistor330
VCC26
AC50/60HZ1minute
10Ffor
photo coupler specification
high current igbt driver
AC2500
SANREX igbt driver
driver circuit design for IGBT module
igbt gate driver peak
photo coupler
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GH-039
Abstract: SANREX igbt driver photo coupler specification
Text: HYBRID GATE DRIVER IC FOR IGBT GH-039 SanRex GH-039 is Hybrid Gate Driver IC for IGBT. ● High Voltage isolation by Photo Coupler to drive IGBT up to dual 600V, 300A module ● Operate with single power source ● Support to high-density system design ● Built-in Photo Coupler with resistor（330Ω）
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GH-039
GH-039
resistor330
SANREX igbt driver
photo coupler specification
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Rod Resistors
Abstract: No abstract text available
Text: TERMINATIONS AND RESISTORS ROD RESISTORS TERMINATIONS AND RESISTORS Terminations constructed with 50Q alumina or beryllia rod resistors will yield maximum VSW R of 1.10 at 4 GH z and 1.20 at 12 GH z when properly mounted. SPECIFICATIONS: Power Dimensions Model #
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P4-12
P6-12
Rod Resistors
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a2198
Abstract: 2SK1388 A2-198
Text: 2SK1388 FUJI POWER M O S-FET N-C HANNEL SILICON POWER MOS-FET F-III SERIES •Outline Drawings ■ leatures • H gh current • Low on-resistance • N d secondary breakdown • Low driving power • H gh forward Transconductance ■Applications • Motor controllers
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2SK1388
a2198
2SK1388
A2-198
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a2198
Abstract: 2SK1388 A2-198 a2200 1r1h A2199
Text: 2SK1388 FUJI POWER M O S -FE T N-C H ANNEL SILICON POWER MOS-FET F-III SERIES lOutline Drawings •features 1H gh current 1Low on-resistance ' N d secondary breakdown J •Low driving power 1H gh forward Transconductance c b® ■Applications 12 0.8*“
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2SK1388
SC-46
Tc-25Â
bdtb30
a2198
2SK1388
A2-198
a2200
1r1h
A2199
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Untitled
Abstract: No abstract text available
Text: 2SK2254-01L. S FUJI POWER M O S-FET IM-CHANNEL SILICON POWER MOS-FET _ _ Ä - F A P - I I A S E R I E S • Features • Hi gh speed switching • Lbiiv on-resistance • Nc secondary breakdown • Low driving power • Hi gh voltage
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2SK2254-01L.
20Kf2)
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Untitled
Abstract: No abstract text available
Text: DR/4W1NG MA DE T H I S DRAWING IN 4 THIRD ANGLE IS UNPUBLISHED. COPY RI GH T 19 <Z> PROJECTION LOC RELEASED FOR PUBLICATION AMP BY IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. DIST 54 REVISIONS ZONE LTR DESCRIPTION DATE REACT -2 THRU -24 AND
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2SK41
Abstract: sv 4a diode 2SK413 2SK41 Y sK413 2SJ118 2SK414
Text: 2SK413,2SK414 -| g|LlCON N - C H A N N E L 355-951 m o s fet gH S P E E D p o w e r s w i t c h i n g , *|gH FR E Q U E N C Y p o w e r a m p l i f i e r -,m plem entary pair w ith 2 S J 1 18, 119 g M ATURES # 0W O n-Resistance -i,gh Speed Switching H.gh Cutoff Frequency
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2SK413
2SK414
2SJ118,
2SJ119
-2SK41
2SK41
sv 4a diode
2SK41 Y
sK413
2SJ118
2SK414
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Untitled
Abstract: No abstract text available
Text: DATE SYM REVISION RECORD 9/16/98 1 1 /1 /9 9 - ISSUED A UPDATE ADD TOLERANCE AUTH, DR, CK, NT GH NT GH 0 , 668 0, 615 0 , 112 j~ ±0. 010 I 0, 098 TYP O' 107 ±0, 007 0, 405 0, 079 ± 0, 002 0, 098 ±0 , 002 ^ 4 - - 0, 107 ±0, 003 0, 224 ± 0, ACTUAL SIZE
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94v-0
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AS5C2008
Abstract: QML-38534 WS256K8-100CQ WS256K8-120CQ WS256K8-45CQ WS256K8-55CQ WS256K8-70CQ WS256K8-85CQ 55cq WS256K8-70CQA
Text: REVISIO N S LTR D E S C R IP TIO N DATE YR-mo -da APPRO VED D Table I; C hanged the max limit for lcc for device types 06 throu gh 09 98-06 -22 K.A. C ottongim from 150 m A to 180 mA. C hanged the m ax limit for lCCDR for device _ types 06 throu gh 09 from 6.4 m A to 7.0 mA. -
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0EU86
0UE86
AS5C2008
QML-38534
WS256K8-100CQ
WS256K8-120CQ
WS256K8-45CQ
WS256K8-55CQ
WS256K8-70CQ
WS256K8-85CQ
55cq
WS256K8-70CQA
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2SK2004-01
Abstract: 2SK2004-01L T151
Text: 2SK2004-01 L. S FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIASERIES • features Outline Drawings • H gh speed switching • Low on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V ;s= + 30 V Guarantee
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2SK2004-01L.
Tc-25Â
2SK2004-01
2SK2004-01L
T151
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Untitled
Abstract: No abstract text available
Text: Panasonic 7 i»s=5i»WI3Vfytt Aluminium * î w r m r n > Aluminium Electrolytic Capacitors Type Screw Terminal Series GYU/GH) = .= .o h w m □ V y V tt GYU/GH Type Screw terminal Series: Japan • S IK H : 85 °C2000 h • <GY U > <J - X > < S e rie s G Y U >
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C2000
Specificatio20
EE131
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL D A T A : Characteristic impedance Frequency range VSWR 50 O h m s DC - 12,4 GHz 1 GHz < 1,05 2 GHz < 1,10 4 GH z < 1,20 12,4 GH z < 1,20 1 W Power rating MATERIALS : Body Inner conductor B r a s s , plating O ptargen B r a s s , plating Au E Allqemeintotleranzen
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53S17RKu
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Untitled
Abstract: No abstract text available
Text: 4 DR/4 W1 N G MADE IN T H IR D ANGLE T H I S DRAWI NG IS UNPUBLISHED. COPY RI GH T 19 <Z> PRO JECTIO N LOC RELEASED FOR PUBLICATION AMP BY IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. DIST 54 REVISIONS ZO N E LTR DESCRIPTION DATE REACT -14 THRU -21,-23,-24, AND
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Untitled
Abstract: No abstract text available
Text: 2SK2004-01L, S F U J I P O W E R M O S -F E T N-C HANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features IOutline Drawings • H gh speed switching • Lnw on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V-s= ± 3 0 V Guarantee
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2SK2004-01L,
IZ3TS30
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