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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK38V2228 12.2— 12.8GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK 38V 2228 is an internally impedance matched GaAs power FE T especially designed fo r use in 12.2 ~ 12.8 GHz band amplifiers. The herm etically sealed metal-ceramic


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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 38V 2228 1 2 .2 — 1 2 .8 G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING U n i t : m il l i m e t e r s in c h e s ' The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed fo r use in 12 .2 ~ 12.8


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