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    IM324

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39VS964A 5 .9 6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5 .9 —6.4 GHz band amplifiers. The hermetically sealed metal ceramic


    OCR Scan     		GFC39VS964A MGFC39V5964A Item-01: IM324 PDF