germanium mesa transistor pnp
Abstract: NTE126
Text: NTE126 Germanium Mesa Transistor, PNP, for High–Speed Switching Applications Maximum Ratings: Collector–Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
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NTE126
15Vdc
150mW
00MHz)
10mAdc,
100mAdc,
25mAdc)
germanium mesa transistor pnp
NTE126
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oscillator pnp 800MHZ
Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
Text: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
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NTE160
NTE160
900MHz.
100MHz
450kHz
800MHz
oscillator pnp 800MHZ
"PNP Transistor"
transistor germanium
Germanium power
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AF279
Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB
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AF280
Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:
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AF 109 R
Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB
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AF109R
AF 109 R
AF109R
af109
germanium-pnp-mesa-hf-transistor
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AF239
Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
Text: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz
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AF239
Abstract: germanium-pnp-mesa-hf-transistor AF 239
Text: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz
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TFK U 111 B
Abstract: 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor
Text: Nicht für Neuentwicklungen Not for new developments AF 106 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 260 MHz Applications: Pre, m ixer and o scilla to r stages up to 260 MHz Besondere Merkmale:
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01mA-
TFK U 111 B
6 TFK 106
tfk 106
AF106
tfk 518
tfk u 111
TFK AF
TFK 111
tfk 325
germanium-pnp-mesa-hf-transistor
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AFY42
Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in
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AFY42
AFY42
60106-Y
BIfi03
U120
103MHZ
400M
GR22B
Germanium Transistor
Germanium mesa
SZ2B
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AFY18
Abstract: AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1
Text: AFY18 PNP Mesa transistor for antenna amplifiers up to 250 MHz The AFY18 is a germanium PNP RF epitaxial mesa transistor in a case 5 C3 DIN 41 873 TO -39 . The collector is electrically connected to the case. The A F Y 18 is designed for antenna amplifiers up to 250 MHz.
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AFY18
AFY18
Q60106-Y18-
AFY18E
AFY18D
germanium mesa transistor pnp
Germanium Transistor
afy1
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AFY11
Abstract: germanium mesa transistor pnp Germanium Transistor Germanium mesa
Text: AFY11 Not for new developm ent PNP Mesa transistor for RF-application The AFY11 is a germanium PNP-RF mesa transistor in a case 5 C 3 DIN 41 873 TO-39 . The collector is electrically connected to the case. AFY11 is designed for universal RF-applications up to about 300 MHz.
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AFY11
AFY11
Q60106
100MHz;
germanium mesa transistor pnp
Germanium Transistor
Germanium mesa
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pm4020
Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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23SbOS
AF240
Q60106-X240
-13J5Ã
TambS45Â
-CC80
y12bl
pm4020
AF279
p21b
AF279S
900 mhz germanium diode
Germanium
Q60106-X240
S400
d 1556 transistor
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transistor bc 541
Abstract: TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa
Text: 55C D • û23St.D5 OOQ405Ö T PNP Germanium RF Transistor -SIEMENS A F 139 - AKTIENGESELLSCHAF 31-07 for input stages, m ixer and oscillator stages up to 860 MHz AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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OOQ405Ö
Q60106-X139
135H--
AF139
transistor bc 541
TRANSISTOR BC 534 PNP
transistor Siemens 14 S S 92
AF139
TRANSISTOR BC 534
Germanium power
Germanium mesa
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AF 239 S
Abstract: AF 239 af239 Germanium power S 239 L siemens
Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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23SbQS
Q62701-F51
oro-20
F--05
AF239S
AF 239 S
AF 239
af239
Germanium power
S 239 L siemens
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transistor 1548 b
Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
Text: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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235b05
GGMG72
Q62701-F51
-13Silâ
CE-10
aa35b05
af239s
transistor 1548 b
AF239
AF 239 S
d 1548
Q62701-F51
af239s
AF 239
Germanium power
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AF239
Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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A23Sb05
AF239
Q60106-X239
T1-0221)
transistor h5c
AF 239
0406H
F239
Q60106-X239
WTV4
AAO-4A
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
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AF139
Abstract: Germanium Amplifier Germanium mesa Germanium power
Text: G ERMANIUM MESA PNP AF139 UHF AMPLIFIER The AF 139 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It is particularly designed for use in prestages as well as in mixer and oscillator stages up to 860 MHz. ABSOLUTE MAXIMUM RATINGS ^C B O ^C E O
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AF139
AF139
Germanium Amplifier
Germanium mesa
Germanium power
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AF239S
Abstract: Germanium mesa
Text: 11419771 AF239S MESA PNP UHF PREAMPLIFIER The AF 239S is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It is particularly designed as preamplifier, mixer and oscillator up to 900 MHz. ABSOLUTE MAXIMUM RATINGS V C ES VcEO ^E B O 'c P.o, Collector-em itter voltage VBE = 0
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AF239S
AF239S
Germanium mesa
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transistor KSA
Abstract: AF109R
Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .
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Q60106-X109-R1
Q004QS?
AF109R
transistor KSA
AF109R
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AFY12
Abstract: OC 140 germanium transistor 103MHZ Germanium Transistor FLR12 611b transistor
Text: AFY12 PNP Mesa transistor for RF-application up to 260 MHz The A F Y 12 is a germanium P N P RF mesa transistor for general high-frequency use in a case 18 A 4 D IN 41 876 TO-72 . The terminals are electrically insulated from the case. The A F Y 12 is designed for use in pre-stages, mixer stages and oscillator
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AFY12
Q60106
120mmho
AFY12
OC 140 germanium transistor
103MHZ
Germanium Transistor
FLR12
611b transistor
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AF106
Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72
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023SbOS
GGGHG47
AF106
AKTIEN6ESELLSCHAF25C
AF106
AF108
oms 450
tlf 4 120 siemens
100MHZ
200MHZ
transistor pnp 30V 1A 1W
2sc 103 transistor
Germanium mesa
tlf 106
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transistor a750
Abstract: F240 transistor TIC 122 Transistor Germanium power tic 122
Text: r. 2 S C D • f l S3 SbO S G0 G4 G7 b 1 H SIE6 PIMP Germanium RF Transistor - S I E M E N S AF240 AKTIENGESELLSCHAF fo r m ixe r and o sc illa to r sta g e s up to 9 0 0 M H z A F 24 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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AF240
TambS45
0004Q7A
transistor a750
F240 transistor
TIC 122 Transistor
Germanium power
tic 122
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021B2
Abstract: transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa
Text: Nicht für N eu entw icklun g PNP-Mesatransistor für HF-Anwendungen bis 900 MHz AFY16 A FY 16 ist ein PNP-Germanium-Transistor in Mesa-Techmk um Gehäuse 18 A 4 DIN 41 876 T O -72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor A FY 16 ist für
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Q60106-Y16
B63310-K1-A12
021B2
transistor cbj
hmv12
pnp germanium transistor
15bis
AFY16
BA RV
mesa
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