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    GENERAL SEMICONDUCTOR MARKING CODE GF Search Results

    GENERAL SEMICONDUCTOR MARKING CODE GF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING CODE GF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    VISHAY MARKING CODE

    Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
    Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600ï P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 VISHAY MARKING CODE Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600 P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    s104 diode 87a

    Abstract: s104 85a MELF DIODE color band brown bridge diode kbu 402 s104 diode sma ae SMC MARKING white marking 5 melf -diode glass diode AE 89A diode code ae 89A MARK sma diode general semiconductor
    Text: New Product ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high frequency


    Original     		PDF J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-220AA GBPC602RU GBPC2508 02-Oct-09 s104 diode 87a s104 85a MELF DIODE color band brown bridge diode kbu 402 s104 diode sma ae SMC MARKING white marking 5 melf -diode glass diode AE 89A diode code ae 89A MARK sma diode general semiconductor

    marking code gb

    Abstract: DO-214BA JESD22-B102D J-STD-002B GF1J-E3
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		PDF MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code gb DO-214BA JESD22-B102D J-STD-002B GF1J-E3

    GF1G

    Abstract: gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		PDF MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 GF1G gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b

    Untitled

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement • Low forward voltage drop • Low leakage current • High forward surge capability


    Original     		PDF MIL-S-19500 J-STD-020, DO-214BA AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08

    code 67a

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier condition structure for high reliability • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		PDF MIL-S-19500 DO-214BA J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 code 67a

    Untitled

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		PDF MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-214BA, 08-Apr-05

    GF1G

    Abstract: gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		PDF MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-214BA 18-Jul-08 GF1G gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM

    GF1G

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19500 J-STD-020C 10-Aug-05 GF1G

    GF1G

    Abstract: DO-214BA JESD22-B102D J-STD-002B
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		PDF DO-214BA MIL-S-19ed 08-Apr-05 GF1G DO-214BA JESD22-B102D J-STD-002B

    DO-214BA

    Abstract: J-STD-002
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement SUPERECTIFIER • Low forward voltage drop • Low leakage current


    Original     		PDF MIL-S-19500 J-STD-020, DO-214BA AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 DO-214BA J-STD-002

    marking CODE GA

    Abstract: DO-214BA General Semiconductor diode marking 49 marking code .gj marking code gj marking gk GF1B gf1m DO-214BA DEVICE MARKING CODE ga
    Text: GF1A thru GF1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier DO-214BA GF1 Reverse Voltage 50 to 1000V Forward Current 1.0A * d e t n e t a P 0.066 (1.68) 0.040 (1.02) Mounting Pad Layout 0.066 MIN. (1.68 MIN.)


    Original     		PDF DO-214BA 50mVp-p 08-Jul-02 marking CODE GA DO-214BA General Semiconductor diode marking 49 marking code .gj marking code gj marking gk GF1B gf1m DO-214BA DEVICE MARKING CODE ga

    Untitled

    Abstract: No abstract text available
    Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement SUPERECTIFIER • Low forward voltage drop • Low leakage current


    Original     		PDF MIL-S-19500 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214BA 2011/65/EU 2002/95/EC. 2011/65/EU.

    DO-214BA

    Abstract: No abstract text available
    Text: RGF1A thru RGF1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Reverse Voltage DO-214BA GF1 50 to 1000V Forward Current 1.0A * d e t n e t a P Mounting Pad Layout 0.066 (1.68) 0.040 (1.02)


    Original     		PDF DO-214BA 50mVp-p 08-Feb-02 DO-214BA

    2n5457

    Abstract: 5457 MARK 61S
    Text: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from


    Original     		PDF 2N5457 MMBF5457 2N5458 2N5459 MMBF5458 MMBF5459 OT-23 5457 MARK 61S

    2N5460

    Abstract: 7-segment+4+digit+5461
    Text: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF 2N5460 MMBF5460 MMBF5461 MMBF5462 2N5461 2N5462 7-segment+4+digit+5461

    2N5461

    Abstract: 5461 AS MMBF5462 61V
    Text: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF 2N5460 MMBF5460 MMBF5461 MMBF5462 2N5461 2N5462 5461 AS MMBF5462 61V

    1N60C

    Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C O-252 FQD1N60CTF FQD1N60CTM 1N60C FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60

    CMLM0305

    Abstract: mosfet low vgs CMLM0305G
    Text: CMLM0305 CMLM0305G MULTI DISCRETE MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0305 and CMLM0305G are Multi Discrete Modules™ consisting of a single N-Channel Enhancement-mode MOSFET


    Original     		PDF CMLM0305 CMLM0305G CMLM0305 CMLM0305G OT-563 115mA mosfet low vgs

    6892a

    Abstract: No abstract text available
    Text: FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS6892A FDS6892A NF073 6892a

    general semiconductor marking code GF

    Abstract: F1K marking DO-214BA
    Text: GF1ATHRU GF1M SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere DO-214BA r FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Ideal for surface mount automotive applications


    OCR Scan     		PDF DO-214BA MIL-S-19500 general semiconductor marking code GF F1K marking DO-214BA