TRANSISTOR BIPOLAR 400V 20A
Abstract: No abstract text available
Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40UPbF
O-220AB
O-220AB
O-220AB.
TRANSISTOR BIPOLAR 400V 20A
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IRGMH40F
Abstract: S M 685 13A
Text: PD -91418B IRGMH40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-91418B
IRGMH40F
O-254AA.
MIL-PRF-19500
IRGMH40F
S M 685 13A
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555 triangular wave
Abstract: No abstract text available
Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40UPbF
O-220AB
555 triangular wave
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transistor 20a
Abstract: No abstract text available
Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40UPbF
O-220AB
O-220AB
O-220AB.
transistor 20a
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IRG4MC50U
Abstract: No abstract text available
Text: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency
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-94273A
IRG4MC50U
O-254AA.
MIL-PRF-19500
IRG4MC50U
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Untitled
Abstract: No abstract text available
Text: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency
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-94273A
IRG4MC50U
O-254AA.
MIL-PRF-19500
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f1010
Abstract: 555 triangular wave B-989
Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40FPbF
O-220AB
O-220AB
O-220AB.
f1010
555 triangular wave
B-989
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TRANSISTOR 545
Abstract: IRG4MC50U
Text: PD -94273 IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency
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IRG4MC50U
O-254AA
MIL-PRF-19500
TRANSISTOR 545
IRG4MC50U
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IRF1010
Abstract: No abstract text available
Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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PD-94810
IRG4BC30UDPbF
O-220AB
O-220AB.
IRF1010
IRF1010
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IGBT 600V 12A
Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010
Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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PD-94810
IRG4BC30UDPbF
O-220AB
O-220AB.
IRF1010
IGBT 600V 12A
TO-220AB transistor package
ic MARKING QG
ultraFast Recovery Bridge Rectifier
IRF1010
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Untitled
Abstract: No abstract text available
Text: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UPbF
O-220AB
O-220AB
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555 triangular wave
Abstract: transistor 45 f 122 Inductive Load Driver igbt transistor
Text: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UPbF
O-220AB
O-220AB
O-220AB.
555 triangular wave
transistor 45 f 122
Inductive Load Driver
igbt transistor
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Untitled
Abstract: No abstract text available
Text: OM651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt. 20 A n d 30 A m p , N - C h a n n e l IG B T W ith a Soft R ec o v ery Diode In A H e r m e t i c Metal P a c k a g e FEATURES • • • • • • • •
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OM651OSC
OM6511SC
O-258AA
MIL-S-19500,
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IGBT in TO92 Package
Abstract: OM6510SC OM6511SC
Text: OM 651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt, 20 And 30 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package F EA TU R E S Isolated Hermetic Metal P ackage High Input Impedance Low On-Voltage
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OM6510SC
OM6511
O-258AA
MIL-S-19500,
IGBT in TO92 Package
OM6511SC
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0985
Abstract: ma 1050
Text: ERICSSON í PTF 10035 30 Watts, 1 . 9 - 2 . 0 GHz L D M O S Field Effect Transistor Description The 10035 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum
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P4917-ND
P5276
5801-PC
0985
ma 1050
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Untitled
Abstract: No abstract text available
Text: FS 15 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,167 °C/W DC, pro Zw eig/perarm 1 °C/W Maximum rated values VcES lc 1200 V 15 A 150 °C - 4 0 / + 150 °C
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Untitled
Abstract: No abstract text available
Text: PD - 9.1454A International IGR Rectifier IRG4 BC4 0 F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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O-22QAB
002fl0Rb
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100nj 100
Abstract: No abstract text available
Text: FS 15 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1200 V 15 A ms 30 A tc = 25°C 125 W lc Ic r m Pta, Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module
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15V10
QD020b7
100nj 100
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier PD - 9.1456D IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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1456D
IRG4BC40U
O-22QAB
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ERICSSON 10031
Abstract: PTF 10031 ericsson b
Text: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation
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P4917-ND
P5276
ERICSSON 10031
PTF 10031
ericsson b
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Untitled
Abstract: No abstract text available
Text: PD -9.1599 International K g l Rectifier IRG4BC20KD PREUMNARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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IRG4BC20KD
T0-220AB
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IOR 451
Abstract: No abstract text available
Text: International IQR Rectifier PD - 9 .1 4 5 4 A IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -6 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC40F
T0-220AB
IOR 451
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ITE35C12
Abstract: ITE35F12
Text: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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DS4313-1
ITE35F12/ITE35C12
ITE35X12
37bfi522
ITE35C12
ITE35F12
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Untitled
Abstract: No abstract text available
Text: PD -91734 International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d for m otor control, tsc =10 as, @ 3 6 0 V V CE (start , T j = 1 2 5 °C ,
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IRG4BC10KD
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