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    GDDR5 256M Search Results

    GDDR5 256M Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    AT25DN256-MAHF-Y Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DF256-MAHN-T Renesas Electronics Corporation 256 Kbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory with Dual Read Support Visit Renesas Electronics Corporation
    AT25DN256-MAHF-T Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation

    GDDR5 256M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    0909NS

    Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
    Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA


    Original     		16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3 PDF

    EDW4032BABG

    Abstract: GDDR5 layout GDDR5 Elpida GDDR5
    Text: PRELIMINARY DATA SHEET 4G bits GDDR5 SGRAM EDW4032BABG 128M words x 32 bits Specifications Features • Density: 4G bits • Organization — 8Mbit x 32 I/O x 16 banks — 16Mbit x 16 I/O x 16 banks • Package — 170-ball FBGA — Lead-free (RoHS compliant) and Halogen-free


    Original     		EDW4032BABG 16Mbit 170-ball M01E1007 E2080E10 EDW4032BABG GDDR5 layout GDDR5 Elpida GDDR5 PDF

    Elpida GDDR5

    Abstract: No abstract text available
    Text: DATA SHEET 4G bits GDDR5 SGRAM EDW4032BABG 128M words x 32 bits Specifications Features • Density: 4G bits • Organization — 8Mbit x 32 I/O x 16 banks — 16Mbit x 16 I/O x 16 banks • Package — 170-ball FBGA — Lead-free (RoHS compliant) and Halogen-free


    Original     		EDW4032BABG 16Mbit 170-ball M01E1007 E2080E20 Elpida GDDR5 PDF

    K4G41325FC

    Abstract: K4G41325F samsung GDDR5 K4G10325FG-HC03 gddr5 samsung K4W4G1646 256MX16 K4G20325FD
    Text: Nov. 2012 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		K4W2G1646E BC1A/11 K4W4G1646B A/11/12 K4J10324KG HC1A/14 32Mx32 8K/32ms K4G10325FG HC03/04/05 K4G41325FC K4G41325F samsung GDDR5 K4G10325FG-HC03 gddr5 samsung K4W4G1646 256MX16 K4G20325FD PDF

    ELPIDA DDR3

    Abstract: Elpida GDDR5 elpida GDDR5 tsop ddr2 ram ELPIDA mobile DDR ELPIDA ddr2 RAM SODIMM ddr2 8gb ddr2 8gb mobile memory DDR3 DIMM elpida
    Text: Part Number Decoder - 1 Part Number Decoder This document is intended to give customers understanding of the Elpida part numbering system. For detailed line-up about the individual products, please consult Elpida sales representatives. Elpida Memory, Inc. 2002-2009


    Original     		ECT-TS-1993 16-bank 512Mb x16bit x32bit ELPIDA DDR3 Elpida GDDR5 elpida GDDR5 tsop ddr2 ram ELPIDA mobile DDR ELPIDA ddr2 RAM SODIMM ddr2 8gb ddr2 8gb mobile memory DDR3 DIMM elpida PDF

    HY5PS1G1631CFP

    Abstract: H5PS5162 h5ps5162ffr HY5PS1G1631C hy5rs123235b hy5ps121621cfp-25 HY5PS121621C-FP25 HY5PS1G1631 HY5RS123235BFP-14 hy5ps561621b
    Text: Q2’ 2008 Short Form Catalog Part Number System Change Notice Back ground – Effective from September, 2007, a more concise part numbering system is utilized by Hynix with the intention of managing product line with more consistency Target Product – Devices developed after 2007-09-01 and their


    Original     		com/eng/00 256Mb 16Mx16 300MHz HY5DU561622ETP-33 TSOPI170ball) 16Bank, H5GQ1H24MJR-T1C 170ball) HY5PS1G1631CFP H5PS5162 h5ps5162ffr HY5PS1G1631C hy5rs123235b hy5ps121621cfp-25 HY5PS121621C-FP25 HY5PS1G1631 HY5RS123235BFP-14 hy5ps561621b PDF

    EDE2116ACBG

    Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		E1610E30 240-pin M01E0706 EDE2116ACBG EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F PDF

    E4690

    Abstract: GET56NGBB22GVE GDDR5 phy AMD Athlon 64 X2 dual 4800 pin out E6460 E6760 TEN54LSDV23GME 100-CG2293 6970M RADEON e2400
    Text: A M D EM BE DDE D SOLUTIONS: Product Selection Guide AMD Embedded: The Next Generation of Embedded Computing AMD helps deliver the right balance of CPU, GPU and chipset capabilities, to give designers the solutions they need to create the next generation of embedded applications. Along with a broad range


    Original     		43838Q E4690 GET56NGBB22GVE GDDR5 phy AMD Athlon 64 X2 dual 4800 pin out E6460 E6760 TEN54LSDV23GME 100-CG2293 6970M RADEON e2400 PDF

    EDJ2116DASE

    Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
    Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド 目 次 1. DDR3


    Original     		J1610E30 240-pin EDU1032AABG 136-FBGA M01J0706 TEL033281-1563 TEL066390-8727 EDJ2116DASE EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG PDF

    samsung GDDR5

    Abstract: K4D263238K-VC40 GDDR5 application note samsung K4D263238K-VC50 tcl 2272 GDDR GDDR2 GDDR3 GDDR4 GDDR5 K4D263238K gddr5 samsung K4D263238KVC40 K4D263238KVC50
    Text: 128M GDDR SDRAM K4D263238K 128Mbit GDDR SDRAM Revision 1.1 July 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4D263238K 128Mbit 875ns 06Gbps) samsung GDDR5 K4D263238K-VC40 GDDR5 application note samsung K4D263238K-VC50 tcl 2272 GDDR GDDR2 GDDR3 GDDR4 GDDR5 K4D263238K gddr5 samsung K4D263238KVC40 K4D263238KVC50 PDF

    NPCE781BA0DX

    Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
    Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM


    Original     		512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U PDF

    NPCE781BA0DX

    Abstract: NPCE781 NPCE781B DML D01 RT8209E RT8223BGQW RT8209EGQW-GP BCM57780 RT8209EGQW APX9132H
    Text: 5 4 3 2 Project code: 91.4HD01.001 PCB P/N : 48.4GX01.0SA PCB 版版 : 09919 SA REVISION : PCB STACKUP SYSTEM JV42-DN Block Diagram DDR3 800/1066/1333MHz CRT AMD Champlain CPU S1G4 45W D 16,17 DDR3 20 TOP LCD VCC 4,5,6,7 HDMI S IN OUT AMD RS880M CPU I/F


    Original     		JV42-DN 800/1066/1333MHz 638-Pin uFCPGA638 4HD01 4GX01 RT8223 800/1066/1333MHz RT8209E 16X16 NPCE781BA0DX NPCE781 NPCE781B DML D01 RT8209E RT8223BGQW RT8209EGQW-GP BCM57780 RT8209EGQW APX9132H PDF

    oz8681l

    Abstract: OZ8681 RT8207AGQW 8681l P0603BDG 92hd80 RTL8111D MEK100-05-DPS RS880M RS880
    Text: 1 2 3 4 PCB STACK UP A LAYER LAYER LAYER LAYER LAYER LAYER 1 2 3 4 5 6 5 6 7 8 01 LX89 SYSTEM DIAGRAM : TOP :GND : IN1 : IN2 : VCC : BOT DDR3-SODIMM1 DDR3 channel A DDR3-SODIMM2 CPU THERMAL SENSOR AMD Champlain PAGE 6,7 35mm X 35mm S1G4 Processor DDR3 channel B


    Original     		318MHz 5W/35W ICS9LPRS476AKLFT-- SLG8SP628VTR-- RTM880N-796 RS880 528pin RTL8111D VDD10 oz8681l OZ8681 RT8207AGQW 8681l P0603BDG 92hd80 RTL8111D MEK100-05-DPS RS880M PDF

    Nuvoton NPCE781

    Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602
    Text: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010


    Original     		Madison-LP/M96-LP RS880M SB820M 4HH01 BQ24745 C6806, C6807, EC7928-EC7932. TP1309. EC704 Nuvoton NPCE781 NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602 PDF

    BCM57780

    Abstract: AN12947a UP6111 isl62882 SLG8SP585V ALC669X bcm5778 wpce775 Intel hm55 WINBOND W25Q32BVSSIG
    Text: 5 4 3 2 1 ZY9B SYSTEM BLOCK DIAGRAM GPU CORE PWR CHARGER P44 ISL6264 GPU IO PWR 3/5V SYS PWR P45 ISL62827 +3V,+ 5V,+1.5V,+1.05V,+1.1V_VTT CLOCK GENERATOR <MCH Processor> Dual Channel 800/ 1066 MHz DDR III SO-DIMM 0 SO-DIMM 1 800 MT/s 1066 MT/s P14, 15 DDR SYSTEM MEMORY


    Original     		ISL6264 ISL88731 ISL62827 ISL6237 SLG8SP585V 318MHz 133MHz 100MHz 120MHz ISL62882 BCM57780 AN12947a UP6111 isl62882 SLG8SP585V ALC669X bcm5778 wpce775 Intel hm55 WINBOND W25Q32BVSSIG PDF

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd PDF

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


    Original     		256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR PDF

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    RS780M

    Abstract: RS780MC RX781 RS780E AMD RS780 790GX M780G RS780 ATI rs780 RS880
    Text: AMD 780G Family Register Programming Requirements For the RS780, RS780C, RS780D, RS780M, RS780E, RS780MC, and RX781 Technical Reference Manual Rev. 1.01 P/N: 43291_rs780_rpr_pub_1.01 2009 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Athlon, ATI, Mobility, PowerPlay, CrossFire, Radeon, and combinations thereof, are trademarks of Advanced Micro Devices, Inc.


    Original     		RS780, RS780C, RS780D, RS780M, RS780E, RS780MC, RX781 RS780 RS780M RS780MC RX781 RS780E AMD RS780 790GX M780G ATI rs780 RS880 PDF

    kb3930qf a1

    Abstract: 92HD80B1X5 RTS5219-GR 8681l KB3930QF OZ8681 ANX3110 P0603BDG P0603BD IDT92HD80B1
    Text: 1 2 3 4 5 6 7 8 R23 AMD Sabinhttp://hobi-elektronika.net UMA/Muxless SYSTEM DIAGRAM AMD A SODIMM1 DDR3 Channel A PCI-E x 8 8 ~ 15 Max. 4GB SODIMM2 DDR3 Channel B DDR3 900MHz Seymour-XT AMD PG.12 Stackup TOP GND IN1 IN2 VCC BOT VRAM 128x16x4,64bit PP;PP


    Original     		900MHz 128x16x4 64bit ANX3110 RTS5219-GR RTS8165EH PC160 PC161 PC162 PC163 kb3930qf a1 92HD80B1X5 RTS5219-GR 8681l KB3930QF OZ8681 P0603BDG P0603BD IDT92HD80B1 PDF

    winband

    Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
    Text: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM


    OCR Scan     		300mm winband W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV PDF