Untitled
Abstract: No abstract text available
Text: SBD T y p e : GCH20A09 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings
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GCH20A09
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GCH20A09 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings
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GCH20A09
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GCH20A09 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings
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GCH20A09
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GCH20A09
Abstract: No abstract text available
Text: 20A Avg. 90 Volts SBD GCH20A09 •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ ー
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GCH20A09
Tc121
20mVRMS,
100kHz,
GCH20A09
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tc122 20 5 3
Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85
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O-251
EA20QS04
EA20QS06
EA20QS09
EA20QS10
ESL03B03
EA30QS03L
EA30QS04
EA30QS06
EA30QS09
tc122 20 5 3
tc 122 25 5
tc122 25
TC-138
tc122
tc122 25 4
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GCH20 CH20A 20A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage
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GCH20
CH20A
20A09
O-220AB
GCH20A09
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : GCH20 CH20A 20A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage
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GCH20
CH20A
20A09
O-220AB
GCH20A09
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GCH20A09
Abstract: No abstract text available
Text: SBD T y p e : GCH20 CH20A 20A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage
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GCH20A09
O-220AB
GCH20A09
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 22a / 9o~ ioov 'j g « c l S ï î ^ n î S u ! f S f o FEATURES o [ SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and R e e l: C20T-Q o Tabless TO-220: C20T-Q-11A o T0-220AB : GCH20A- o T0-220AB Fully Molded Isolation : FCH20Ao Dual Diodes - Cathode
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O-263AB
C20T-Q
O-220:
C20T-Q-11A
T0-220AB
GCH20A-
T0-220AB
FCH20Ao
C20T09Q
C20T09Q-
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30KF60B
Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166
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1N4001
1N4002
1N4004
1N4005
1N4006
1N4007
2VF10CT
F20CT
F30CT
F40CT
30KF60B
10EF1
NSF03A20
C25P10Q
F10P10Q
C25P40F
KSF25A120B
C10P10Q
61MQ60
c16p40f
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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OCR Scan
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1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
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CH20A10
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 22a/ 9 0 ~ ioov ¡jK ft f S ? 09 FEATURES O SQ U A RE-PA K l TO-263AB SMD Packaged in 24mm Tape and Reel : C 20T-Q o Tabless TO-220: C20T-Q-11A o T0-220A B : G C H 20A - o T 0-220A B Fully Molded Isolation : FCH20A " o Dual Diodes - C athode
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O-263AB
20T-Q
O-220:
C20T-Q-11A
T0-220A
FCH20A
C20T09Q
C20T09Q-11A
GCH20A09
FCH20A09
CH20A10
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SMEW
Abstract: SMD DIODE 512 smd diode je C20T09Q C20T09Q-11A C20T10Q C20T10Q-11A FCH20A09 FCH20A10 GCH20A09
Text: SCHOTTKY BARRIER DIODE 22a / 9o ~ io o v ¡ j U f f S g iU f g ü g S ÎS £ K ? 09 FEATURES o | SQUARE-PAK 1TO-263AB SMD Packaged in 24mm Tape and Reel : C20T-Q o Tabless TO-220: C20T-Q-11A o TO-220AB : GCH20A- o T0-220AB Fully Molded Isolation : FCH20A"
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2A/90
C20T09Q
C20T09Q-11A
GCH20A09
FCH20A09
C20T10Q
C20T10Q-11A
GCH20A10
FCH20A10
O-263AB
SMEW
SMD DIODE 512
smd diode je
FCH20A10
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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