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    GB20SHT06-CAU SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB20SHT06-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT06-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GB20SHT06-CAU GB20SHT06-CAU. 05-SEP-2013 GB20SHT0ODE GB20SHT06 46E-17 00E-05 26E-09 GB20SHT06-CAU SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB20SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features •       650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB20SHT06-CAU CharacteristiSHT06 GB05SHT06 46E-17 00E-05 26E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT06-CAU VRRM o IF @ 25 C QC = = = 650 V 30 A 66 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB20SHT06-CAU Mil-PRF-19500 GB20SHT06 46E-17 00E-05 26E-09 00E-10 00E-03