a3568
Abstract: No abstract text available
Text: JBT6L78-AS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic JBT6L78–AS Gate Driver for TFT LCD Panel The JBT6L78-AS is a 162-channel output gate driver for TFT LCD panels. Externally inputting panel drive voltage can vary the Low level of the output voltage; thus, the device can drive various types of TFT LCD panels.
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JBT6L78-AS
JBT6L78â
JBT6L78-AS
162-channel
a3568
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lcd 3902
Abstract: G146 G151 G100 G101 G102 G103 G104 G160 JBT6L78-AS
Text: JBT6L78-AS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic JBT6L78–AS Gate Driver for TFT LCD Panel The JBT6L78-AS is a 162-channel output gate driver for TFT LCD panels. This device accepts external input of the panel drive voltage, allowing you to change the low-level output voltage. Thus, the can be used for various TFT
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JBT6L78-AS
JBT6L78
JBT6L78-AS
162-channel
lcd 3902
G146
G151
G100
G101
G102
G103
G104
G160
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g147
Abstract: teg 128 lcd 3902 G100 G101 G102 G103 G104 G160 JBT6L78-AS
Text: JBT6L78-AS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic JBT6L78–AS Gate Driver for TFT LCD Panel The JBT6L78-AS is a 162-channel output gate driver for TFT LCD panels. This device accepts external input of the panel drive voltage, allowing you to change the low-level output voltage. Thus, the can be used for various TFT
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JBT6L78-AS
JBT6L78
JBT6L78-AS
162-channel
g147
teg 128
lcd 3902
G100
G101
G102
G103
G104
G160
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g143
Abstract: No abstract text available
Text: JBT6L78-AS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic JBT6L78–AS Gate Driver for TFT LCD Panel The JBT6L78-AS is a 162-channel output gate driver for TFT LCD panels. Externally inputting panel drive voltage can vary the Low level of the output voltage; thus, the device can drive various types of TFT LCD panels.
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JBT6L78-AS
JBT6L78
JBT6L78-AS
162-channel
g143
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transistor f613
Abstract: transistor bc 567
Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.
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AO4604
AO4604
AO4604L
-AO4604L
16789ABA2CDE9AFDC
transistor f613
transistor bc 567
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hcf 4052 datasheet
Abstract: 4536b 74 HC 273A 4026B data sheet 4013B applications 4046b 4039B 40106B C3245 40147B
Text: CMOSultbis 28-06-2001 17:44 Pagina 1 The complete CMOS Logic Source Standard Logic Selection Guide CMOSultbis 28-06-2001 17:44 Pagina 2 FUNCTION SELECTOR HC/HCT,AC/ACT,VHC/VHCT, LCX,LVQ,LVX,VCX, LVC,V2G,V2T, V1G,V1T STANDARD CODE FUNCTION GATE BUFFER CMOS 4000B STANDARD CODE
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4000B
4011B,
4012B,
4023B,
4068B,
40107B
4000B,
4001B,
4002B,
4025B
hcf 4052 datasheet
4536b
74 HC 273A
4026B data sheet
4013B
applications 4046b
4039B
40106B
C3245
40147B
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4060B
Abstract: 4039B 40106B 4017B 4541B 4098B 4536b 4070B 4538B 4013B
Text: HC/HCT, AC/ACT, VHC/VHCT, LCX, LVQ, LVX, VCX, V2G, V2T, V1G, V1T STANDARD CODE FUNCTION GATE BUFFER CMOS 4000B STANDARD CODE NAND 00, 03, 10, 30, 133 NOR 02, 27, 4002 4000B, 4001B, 4002B, 4025B AND 08, 09, 11, 21 4068B, 4073B, 4081B, 4082B OR 32, 4072, 4075
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4000B
4000B,
4001B,
4002B,
4025B
4068B,
4073B,
4081B,
4082B
4071B,
4060B
4039B
40106B
4017B
4541B
4098B
4536b
4070B
4538B
4013B
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ST7783
Abstract: Sitronix Technology ST7783 ST7781 929 rev oh s26 G86 703 A2 s534 diode 929 rev oh S29 G82 770 A2 HEF 4543 IC Sitronix Technology
Text: ST ST7781 262K Color Single –Chip TFT Controller/Driver 1. Introduction The ST7781 is a single-chip controller/driver for 262K-color, graphic type TFT-LCD. It consists of 720 source line and 320 gate line driving circuits. This chip is capable of connecting directly to an external microprocessor, and accepts,
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ST7781
ST7781
262K-color,
8-bits/9-bits/16-bits/18-bits
240x320x18
Page80)
Page79)
Page39)
ST7783
Sitronix Technology ST7783
929 rev oh s26
G86 703 A2
s534 diode
929 rev oh S29
G82 770 A2
HEF 4543 IC
Sitronix Technology
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2E12
Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Text: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL130D,
FSL130R
2E12
FSL130D
FSL130D1
FSL130D3
FSL130R
FSL130R1
FSL130R3
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FSL130R
Abstract: MIL-S-19500 2E12 FSL130D fsl130
Text: S E M I C O N D U C T O R FSL130D, FSL130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 8A, 100V, rDS ON = 0.230Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSL130D,
FSL130R
36MeV/mg/cm2
O-205AF
1-800-4-HARRIS
FSL130R
MIL-S-19500
2E12
FSL130D
fsl130
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washing machine circuit diagram universal motor y
Abstract: slip ring induction motor universal washing machine motor scalar control of induction motor m 9583 transistor axial speed control of 1 phase induction motor by using scr pwm 600w inverter diagram speed control of induction motor by using scr 12v dc motor speed controller using igbt pwm USING TRIAC IN STARTING SINGLE PHASE induction mo
Text: A Reference Guide for Motor Control S T M P 1 U T T I N G I C R O E L E C T R O N I C S Y O I O U F Y N O U R C O N T R O L M O T O R 2 Contents Introduction 4 Product Family Highlights 5 The Universal Motor 6 The Brush DC Motor 8 The Single-Phase Induction Motor
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CH-1215
26B/10
SL71Y
BRMOTOR/1000
washing machine circuit diagram universal motor y
slip ring induction motor
universal washing machine motor
scalar control of induction motor
m 9583 transistor axial
speed control of 1 phase induction motor by using scr
pwm 600w inverter diagram
speed control of induction motor by using scr
12v dc motor speed controller using igbt pwm
USING TRIAC IN STARTING SINGLE PHASE induction mo
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2220A SCH1345 P-Channel Power MOSFET 20V, 4.5A, 49mΩ, Single SCH6 http://onsemi.com Features • On-resistance RDS on 1=42mΩ (typ) Halogen free compliance 1.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta = 25C
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ENA2220A
SCH1345
900mm2ï
A2220-5/5
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Untitled
Abstract: No abstract text available
Text: NHD 5.0 800480TF ATXL# TFT Thin Film Transistor Color Liquid Crystal Display Module NHD 5.0 800480 TF A T X L # Newhaven Display 5.0” Diagonal
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800480TF
800xRGBx480Â
30minÂ
100pFÂ
96hrs
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Untitled
Abstract: No abstract text available
Text: NHD-5.0‐800480TF‐ATXL# TFT Thin‐Film‐Transistor Color Liquid Crystal Display Module NHD‐ 5.0‐ 800480‐ TF‐ A‐ T‐ X‐ L‐ #
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800480TFâ
800xRGBx480Â
30minÂ
100pFÂ
96hrs
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4069UB
Abstract: 4098B 4013B 4026B 4504B 4572UB 4051B 4500B 4009UB 4081B
Text: SELECTION GUIDE HCC/HCF 4000B/4500B 40100B STANDARD SERIES AND CROSSPOINT SWITCHES Function GATE BUFFER FLIPFLOP Standard Code NAND 4011B, 4012B, 4023B, 4068B, 40107B NOR 4000B AND 4068B, 4073B, 4081B, 4082B OR 4071B, 4072B, 4075B, 4078B INVERTER 4069UB, 4502B
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4000B/4500B
40100B
4011B,
4012B,
4023B,
4068B,
40107B
4000B
4073B,
4069UB
4098B
4013B
4026B
4504B
4572UB
4051B
4500B
4009UB
4081B
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MSM534021B
Abstract: MSM534031B
Text: O K I Semiconductor MSM534031B 524,288-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION The M S M 5 3 ÎÎÎ R°31B hiSh"Speet? SiIiC° n gate CMOS Mask ROM with 524,288-word x 16-bit capacity The MSM534031B operates on a angle 3.0 V or 3.3 V power supply but offers the same fast access tTmes
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MSM534031B
288-Word
16-bit
MSM534031B
MSMf34031B
MSM534021B
32-pin)
72424Q
MSM534021B
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4001UB
Abstract: 4086B 4737V cmos 4072B 4059B
Text: 7 V FUNCTIONAL INDEX CMOS HE4000B F A M IL Y SURVEY Type numbers have a suffix which signifies the type o f package and burn-in option: P = plastic D IL ; D = ceramic cerdip D IL; T = plastic SO mini-pack; 2nd B = burn-in option 4000B : 4000V : 4000UB: HEC
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HE4000B
4000B
4000UB:
4Q08B
4631B
4041B
4050B
4502B
40097B
40098B
4001UB
4086B
4737V
cmos 4072B
4059B
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4001UB
Abstract: 4737V 4059b 4086B HE4000B 40244B 4000UB 4521B 4541B
Text: FUNCTIONAL yv IN D E X CMOS HE4000B F A M ILY SURVEY Type numbers have a suffix which signifies the type of package and burn-in option: P = plastic Dl L; D = ceramic cerdip Dl L; T = plastic SO mini-pack; 2nd B = burn-in option 4000B : 4000V : 4000UB: HEC
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HE4000B
4000B
4000UB:
range--55
4008B
4531B
4041B
4049B
4050B
4502B
4001UB
4737V
4059b
4086B
40244B
4000UB
4521B
4541B
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Untitled
Abstract: No abstract text available
Text: 3 3 W A R F ? FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, r DS ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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PDF
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FSL130D,
FSL130R
MIL-STD-750,
MIL-S-19500,
500ms;
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Untitled
Abstract: No abstract text available
Text: 130D, FSL130R fsl 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, ros ON = 0.230S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSL130R
O-205AF
254mm)
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Untitled
Abstract: No abstract text available
Text: 3 m a r d is FSL130D, FSL130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 8 A ,1 00 V ,rDS oN = 0.230n TCJ-205AF • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSL130D,
FSL130R
TCJ-205AF
36MeV/mg/cm2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: h a r r is S E M I C O N D U C T O R , FSL130D FSL130R " J " • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 8A, 100V, rDS ON = 0.230SÌ • Total Dose • Single Event TO-205AF M eets Pre-RAD Specifications to 100K RAD (Si)
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FSL130D
FSL130R
O-205AF
1-800-4-HARRIS
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PA 4023B
Abstract: BCD-to-7-Segment d 4021b 4504B 4098B hcf4001b 4011 astable CMOS Dual 64-Stage Static Shift Register 10 line to 7-segment hex to 7 segment 4529B
Text: ALPHANUMERICAL INDEX Type Number Function Package DIP Page Number HCC/HCF 4000B HCC/HCF 4001B HCC/HCF 4002B HCC/HCF 4006B HCC/HCF 4007UB HCC/HCF 4008B HCC/HCF 4009UB HCC/HCF 401 OB HCC/HCF 4011B HCC/HCF 4012B HCC/HCF 4013B HCC/HCF 4014B HCC/HCF 4015B HCC/HCF 4016B
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4000B
4001B
4002B
4006B
4007UB
4008B
4009UB
4011B
4012B
4013B
PA 4023B
BCD-to-7-Segment d 4021b
4504B
4098B
hcf4001b
4011 astable
CMOS Dual 64-Stage Static Shift Register
10 line to 7-segment
hex to 7 segment
4529B
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