GAIN Search Results

GAIN Result Highlights (5)

Part	Manufacturer	Description
LM108AL	Rochester Electronics LLC	LM108 - Super Gain Op Amp
LM108AJ-8/B	Rochester Electronics LLC	LM108 - Super Gain Op Amp
CLC522A/B2A	Rochester Electronics LLC	CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701M2A)
CLC522A/BCA	Rochester Electronics LLC	CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701MCA)
A82370-16	Rochester Electronics LLC	Multifunction Peripheral, CMOS, CPGA132, PGA-132

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Siretta Ltd DELTA12B-X-SMAM-S-S-17-HIGH-GAIN RF ANT 173MHZ WHIP STR SMA MALE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DELTA12B-X-SMAM-S-S-17-HIGH-GAIN	Bulk	13		1	1 $21.45 10 $15.671 100 $12.5346 1000 $11.575 10000 $11.575	Buy Now
Jabil Photonics JP-EDFA-HGAIN-2525 25DBM DWDM EDFA MODULE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JP-EDFA-HGAIN-2525	Bulk	2		1	1 $3050.14 10 $3050.14 100 $3050.14 1000 $3050.14 10000 $3050.14	Buy Now
NXP Semiconductors LFBGAINTPZA ADAPTER 516-BGA TO PGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LFBGAINTPZA	Box			1	1 $96.38 10 $96.38 100 $96.38 1000 $96.38 10000 $96.38	Buy Now
Avnet Americas	LFBGAINTPZA	Box			1	1 $94.095 10 $92.565 100 $87.975 1000 $87.975 10000 $87.975	Buy Now
Mouser Electronics	LFBGAINTPZA					1 $95.62 10 $95.62 100 $95.62 1000 $95.62 10000 $95.62	Get Quote
Newark	LFBGAINTPZA	Bulk			1	1 $100.22 10 $100.22 100 $100.22 1000 $100.22 10000 $100.22	Buy Now
NXP Semiconductors	LFBGAINTPZA					1 $90 10 $90 100 $90 1000 $90 10000 $90	Buy Now
NXP Semiconductors LFBGAINTPWA ADAPTER 416-BGA TO PGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LFBGAINTPWA	Box			1	1 $96.38 10 $96.38 100 $96.38 1000 $96.38 10000 $96.38	Buy Now
Avnet Americas	LFBGAINTPWA	Box			1	1 $94.095 10 $92.565 100 $87.975 1000 $87.975 10000 $87.975	Buy Now
Mouser Electronics	LFBGAINTPWA					1 $95.62 10 $95.62 100 $95.62 1000 $95.62 10000 $95.62	Get Quote
NXP Semiconductors	LFBGAINTPWA					1 $90 10 $90 100 $90 1000 $90 10000 $90	Buy Now
NXP Semiconductors LFBGAINTPV1A 356 PIN 0.8 MM BGA TO PGA ADAPTE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LFBGAINTPV1A	Bulk			1	1 $251.34 10 $251.34 100 $251.34 1000 $251.34 10000 $251.34	Buy Now
Avnet Americas	LFBGAINTPV1A	Box			1	1 $188.19 10 $185.13 100 $175.95 1000 $175.95 10000 $175.95	Buy Now
Mouser Electronics	LFBGAINTPV1A					1 $203.18 10 $203.18 100 $203.18 1000 $203.18 10000 $203.18	Get Quote
Newark	LFBGAINTPV1A	Bulk			1	1 $218.79 10 $212.67 100 $200.43 1000 $200.43 10000 $200.43	Buy Now
NXP Semiconductors	LFBGAINTPV1A					1 $180 10 $180 100 $180 1000 $180 10000 $180	Buy Now

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GAIN Datasheets (112)

Part	Manufacturer	Description	Datasheet Type	PDF
700-0023	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT	Original	PDF
700-0023-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT	Original	PDF
700-0024	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT	Original	PDF
700-0024-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT	Original	PDF
700-0025	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT	Original	PDF
700-0025-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT	Original	PDF
700-0026	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT	Original	PDF
700-0026-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT	Original	PDF
700-0031	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT	Original	PDF
700-0031-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT	Original	PDF
700-0033	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT	Original	PDF
700-0033-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT	Original	PDF
700-0034	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT	Original	PDF
700-0034-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT	Original	PDF

700-0036	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE + U.FL	Original	PDF
700-0036-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE + U.FL	Original	PDF
700-0045	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT	Original	PDF
700-0045-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT	Original	PDF
700-0047	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI CHIP ANT	Original	PDF
700-0047-100	GainSpan	RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI CHIP ANT	Original	PDF

GAIN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TLE2037, TLE2037A EXCALIBUR LOW -NOISE HIGH-SPEED PRECISION DECOM PENSATED OPERATIONAL AM PLIFIERS D3454, MAY 1990 - REVISED APRIL 1991 available features Outstanding Combination of DC Precision and AC Performance: Gain-Bandwldth Product. . . 80 MHz Typ V	OCR Scan	PDF	TLE2037, TLE2037A D3454,
UM5583 Abstract: UM55 SPKP rs 355 integrated circuits 5583H Text: UMC UM5583 3 Sec Recording / Playback 1C Features • "BEEP" sound indicates to start recording and memory full for manual playback ■ Built-In AGC Automatic Gain Control to enlarge input dynamic range ■ Built-in low pass filter ■ Built-in microphone amplifier	OCR Scan	PDF	UM5583 UM5583 UM5583H UM55 SPKP rs 355 integrated circuits 5583H
2SD1294 Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain	OCR Scan	PDF	2SD1294 2SD1294
Untitled Abstract: No abstract text available Text: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description	OCR Scan	PDF	TGA8300 18-GHz 18-dBm TGA8300
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)	OCR Scan	PDF	2SC3420
Untitled Abstract: No abstract text available Text: TLE2024, TLE2024A, TLE2024B, TLE2024Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION QUAD OPERATIONAL AMPLIFIERS D 3 2 6 5 , M A Y 1 9 8 9 - R E V IS E D O C T O B E R 1991 available features Supply Current . . . 1 mA Max High Open-Loop Gain . . . 7 V/jiV 137 dB Typ	OCR Scan	PDF	TLE2024, TLE2024A, TLE2024B, TLE2024Y 2024Y
TRANSISTOR Marking XB PNP Abstract: YTS3906 Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity	OCR Scan	PDF	YTS3906 -50mA, YTS3904 300ne TRANSISTOR Marking XB PNP YTS3906
Untitled Abstract: No abstract text available Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)	OCR Scan	PDF	2SD2079 2SB1381. MAX30
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)	OCR Scan	PDF	2SC3265 2SA1298 O-236MOD SC-59CEO
TIM1414-4LA-371 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation	OCR Scan	PDF	TIM1414-4LA-371 TIM1414-4LA-371
MG50G2CL3 Abstract: Mg50G2cl mg50g2 Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)	OCR Scan	PDF	MG50G2CL3 MG50G2CL3 Mg50G2cl mg50g2
2SB907 Abstract: No abstract text available Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage	OCR Scan	PDF	-2SB907 2SD1222. 2SB907 2SB907
MG15G1AL3 Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)	OCR Scan	PDF	MG15G1AL3 MG15G1AL3 MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	PDF	HN3C17FU 16GHz

MG400H1FK1 Abstract: LF400A Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage	OCR Scan	PDF	MG400H1FK1 TjSl85' MG400H1FK1 LF400A
POUT315 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED	OCR Scan	PDF	-45dBc TIM5964-16SL-081 2-16G1B) POUT315
TIM0910-20 Abstract: No abstract text available Text: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC	OCR Scan	PDF	TIM0910-20 2-11C1B) TIM0910-20
MG75M2CK1 Abstract: tkp7 Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain	OCR Scan	PDF	MG75M2CK1 MG75M2CK1 tkp7
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	PDF	TIM7179-4 MW50970196 TIM7179-4
TGF1350 Abstract: No abstract text available Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation	OCR Scan	PDF	TGF1350 TGF1350
MG150H2CL1 Abstract: No abstract text available Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)	OCR Scan	PDF	MG150H2CL1 MG150H2CL1
Untitled Abstract: No abstract text available Text: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description	OCR Scan	PDF	TGM8014 TGA8014
S-AU25 Abstract: SAU25 Text: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU25 900MHz UHF POWER AMPLIFIER MODULE EUROPE CELLULAR RADIO FEATURES : Unit in mm . Built-in Driver Stage 2-R2.1±a2 . Output Power (6W) is Directly Gained by VCO(lmW). %	OCR Scan	PDF	S-AU25 900MHz -----------------------------------S-AU25 15000pF, S-AU25 SAU25
Untitled Abstract: No abstract text available Text: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )	OCR Scan	PDF	2SC4394 IS21el2

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GAIN Search Results

GAIN Result Highlights (5)

GAIN Price and Stock

Siretta Ltd DELTA12B-X-SMAM-S-S-17-HIGH-GAIN

Jabil Photonics JP-EDFA-HGAIN-2525

NXP Semiconductors LFBGAINTPZA

NXP Semiconductors LFBGAINTPWA

NXP Semiconductors LFBGAINTPV1A

GAIN Datasheets (112)

GAIN Datasheets Context Search

Untitled

UM5583

2SD1294

Untitled

Untitled

Untitled

TRANSISTOR Marking XB PNP

Untitled

Untitled

TIM1414-4LA-371

MG50G2CL3

2SB907

MG15G1AL3

Untitled

MG400H1FK1

POUT315

TIM0910-20

MG75M2CK1

Untitled

TGF1350

MG150H2CL1

Untitled

S-AU25

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