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    GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Search Results

    GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    GAAS MMIC ASSEMBLY AND HANDLING GUIDELINES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KCW-10

    Abstract: AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10
    Text: H GaAs MMIC Assembly and Handling Guidelines Application Note 999 Mechanical Considerations Because of the small size of the devices, handling should always be performed with the aid of a microscope. There are several methods for picking up, transferring and die


    Original     		PDF 5091-1988E 5964-6644E KCW-10 AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10

    84-1LMI epoxy adhesive

    Abstract: 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS
    Text: GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note # 54 - Rev. A May 2000 1.0 ESD Considerations A GaAs IC can be destroyed electrically by a static or other discharge through the device. It must therefore be handled so these effects cannot occur.


    Original     		PDF SPT-1002-A-W-2015-L-F 84-1LMI epoxy adhesive 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS

    Untitled

    Abstract: No abstract text available
    Text: v01.0801 APPLICATION NOTES HANDLING GUIDELINES FOR ESD PROTECTION OF GaAs MMICs Handling Guidelines for ESD Protection of GaAs MMICs All electrical components are sensitive in some degree to Electrostatic Discharge ESD , and GaAs MMICs are no exception. Many digital semiconductors have some level of protection circuitry designed into the input and output pins.


    Original     		PDF MIL-STD-1686.

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Handling Guidelines for ESD Protection of GaAs MMICs General Application Note Hittite Microwave Corporation


    Original     		PDF MIL-STD-1686. AS-9100.

    AN-S002

    Abstract: AN-S013 5091 AN-S001 MGA-64135 GaAS MMIC Assembly and Handling Guidelines MSA1104 msa-0520 POWER AMPLIFIERS CIRCUIT DIAGRAMS TRANSIMPEDANCE mmic
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF AN-G006 MGA-64135 5091-3745E70 5091-9313E AN-S009 5091-9054E AN-S010 5966-0453E AN-S014 AN-S002 AN-S013 5091 AN-S001 GaAS MMIC Assembly and Handling Guidelines MSA1104 msa-0520 POWER AMPLIFIERS CIRCUIT DIAGRAMS TRANSIMPEDANCE mmic

    body contact FET soi RF switch

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
    Text: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises


    Original     		PDF

    Die Attach and Bonding Guidelines

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
    Text: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in


    Original     		PDF HMMC-5033 HMMC-5033 HMMC-5040 HMMC-5618 HMMC-5618 HMMC-5033/rev Die Attach and Bonding Guidelines GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC

    ablebond 84-1 LMI

    Abstract: ABLEBONd 84-1 A004R AMMC-6222 AMMC-6222-W10
    Text: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-6222 AMMC-6222 7-21GHz GaAs High Linearity Low Noise Amplifier Description Avago Technologies AMMC-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 7 GHz to 21GHz.


    Original     		PDF AMMC-6222 7-21GHz AMMC-6222 21GHz. AMMC-6222-W10 AMMC-6222-W50 ablebond 84-1 LMI ABLEBONd 84-1 A004R AMMC-6222-W10

    HP MMIC INA

    Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
    Text: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF


    Original     		PDF 20-Nov-97 docs\amps\00 docs\amps\01 docs\amps\06 MGA-87563 docs\amps\10 docs\amps\11 HP MMIC INA mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier

    ultrasonic probe ge

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
    Text: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes


    Original     		PDF AN-1001 ultrasonic probe ge GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave

    HMMC-2027

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines
    Text: Agilent HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Features • Outputs terminated in 50Ω when off • Frequency range: DC– 26.5 GHz • Insertion loss: 2.5 dB @ 26.5 GHz • Isolation: >70 dB @ 45 MHz >30 dB @ 26.5 GHz • Return loss:


    Original     		PDF HMMC-2027 HMMC-2027 5965-5450E 5988-3197EN GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines

    PUNSE

    Abstract: 1GG7-8005 1GG7
    Text: Agilent HMMC-2027 DC–26.5 GHz SPDT GaAs MMIC Switch 1GG7-8005 Data Sheet SEL1 RF OUT1 SEL2 RF OUT2 Features • Outputs terminated in 50 Ω when off • Frequency range: DC to 26.5 GHz • Insertion loss: 2.5 dB @ 26.5 GHz • Isolation: > 70 dB @ 45 MHz


    Original     		PDF HMMC-2027 1GG7-8005 5989-6204EN PUNSE 1GG7

    HMMC-2006

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines
    Text: Agilent HMMC-2006 DC–6 GHz Unterminated SPDT Switch Data Sheet SEL1 Features • Frequency range: DC– 6 GHz SEL2 • Insertion loss: <1dB @ 6 GHz RF OUT2 RF OUT1 • Isolation: >70 dB @ 45 MHz >35 dB @ 6 GHz • Return loss: >12 dB Both input & output


    Original     		PDF HMMC-2006 HMMC-2006 5967-5765E 5988-3199EN GaAs MMIC ESD, Die Attach and Bonding Guidelines Die Attach and Bonding Guidelines

    1gg6

    Abstract: No abstract text available
    Text: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)


    Original     		PDF HMMC-5032 1GG6-8009 HMMC-5040 HMMC-5618 5989-6209EN 1gg6

    Untitled

    Abstract: No abstract text available
    Text: Avago HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 µm (117.3 x 30.3 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75µm (2.95 x 2.95 mils), or larger


    Original     		PDF HMMC-5021 HMMC-5026 HMMC-5021/26 5965-5449E 5988-1893EN

    27S12

    Abstract: No abstract text available
    Text: Agilent HMMC-5021 2-22 GHz HMMC-5022 (2-22 GHz) and HMMC-5026 (2-26.5 GHz) 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier Features Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 770 µm (117.3 × 30.3 mils) ±10 µm (±0.4 mils)


    Original     		PDF HMMC-5021 HMMC-5022 HMMC-5026 HMMC-5021/22/26 HP83040 150mA) HMMC-5021/22/26/rev 27S12

    Untitled

    Abstract: No abstract text available
    Text: Avago HMMC-5032 17.7 – 32 GHz Amplifier Data Sheet Chip Size: 1.4 x 0.78 mm 55.1 x 30.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within


    Original     		PDF HMMC-5032 HMMC-5032 HMMC-5040 HMMC-5618 5966-4572E 5988-2710EN

    Traveling Wave Amplifier

    Abstract: No abstract text available
    Text: HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 m (117.3 x 30.3 mils) Chip Size Tolerance: ±10 m (±0.4 mils) Chip Thickness: 127 ± 15 m (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75m (2.95 x 2.95 mils), or larger


    Original     		PDF HMMC-5021 HMMC-5026 HMMC-5021/26 HP83040 5988-1893EN V02-3634EN Traveling Wave Amplifier

    Untitled

    Abstract: No abstract text available
    Text: HMMC-2027 DC– 26.5 GHz SPDT GaAs MMIC Switch Data Sheet Description The HMMC-2027 is a GaAs monolithic microwave integrated circuit MMIC designed for low insertion loss and high isolation from DC to 26.5 GHz. It is intended for use as a general-purpose, single-pole,


    Original     		PDF HMMC-2027 HMMC-2027 5988-3197EN AV01-0316EN

    5038

    Abstract: No abstract text available
    Text: Avago HMMC-5038 38 GHz LNA Data Sheet Chip Size: 1630 x 760 µm 64.2 x 29.9 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils) Description The HMMC-5038 MMIC is a high-gain low-noise


    Original     		PDF HMMC-5038 HMMC-5038 5965-5445E 5988-2711EN 5038

    45580

    Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
    Text: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:


    Original     		PDF HMMC-5617 1GG6-8002 HMMC-5617 5989-9479EN 45580 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC

    AN-S002

    Abstract: 5091-9054E AN-S014 AN-S011
    Text: f ï J l HEW LETT '1 1 PACKARD “KM Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at:


    OCR Scan     		PDF AN-G006 MGA-64135 5966-0453E AN-S011 5091-7798E AN-S013 5091-6488E AN-S014 AT-41411 AN-S002 5091-9054E

    GaAS MMIC Assembly and Handling Guidelines

    Abstract: hp 502 ghz power
    Text: Whpl W LETT mL'HM HPAE CK ARD GaAs MMIC SPDT Switch Technical Data HMMC-2006 DC - 6 GHz Features • Broad Bandwidth: DC - 6 GHz • Low Insertion Loss: 1 dB • High Isolation: 60 dB at 300 MHz 35 dB at 6 GHz • High PidB' 23 dBm at 50 MHz >27 dBm at 6 GHz


    OCR Scan     		PDF HMMC-2006 HMMC-2006 GaAS MMIC Assembly and Handling Guidelines hp 502 ghz power

    Untitled

    Abstract: No abstract text available
    Text: blE T> m HEWLETT-PACKARD/ CMPNTS 4447564 DDlOlflS 4Tb • H P A Whol H EW L E T T 1J' EM PA C K A R D GaAs MMIC SPDT Switch Technical Data HMMC-2006 DC - 6 GHz Features • Broad Bandwidth: DC - 6 GHz • Low Insertion Loss: 1 dB • High Isolation: 60 dB at 300 MHz


    OCR Scan     		PDF HMMC-2006 HMMC-2006 44475A4