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    GAAS FET MICRO-X PACKAGE Search Results

    GAAS FET MICRO-X PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    GAAS FET MICRO-X PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rogers* RO4003C

    Abstract: mgf1941 gaas fet micro-X Package marking 137 marking Micro-X MGF1941AL gaas fet micro-X GD-32 gaas fet micro-X Package gaas fet marking J r338
    Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1


    Original     		PDF MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel rogers* RO4003C mgf1941 gaas fet micro-X Package marking 137 marking Micro-X gaas fet micro-X GD-32 gaas fet micro-X Package gaas fet marking J r338

    gaas fet marking J

    Abstract: No abstract text available
    Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1


    Original     		PDF MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel gaas fet marking J

    gaas fet micro-X Package marking

    Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
    Text: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers


    Original     		PDF MGF1451A MGF1451A 13dBm 12GHz gaas fet micro-X Package marking gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X

    gaas fet micro-X Package

    Abstract: P1014 NE76184A-T1 t25000 gaas fet micro-X
    Text: User’s Manual TAPE AND REEL SPECIFICATION FOR MICRO-X PACKAGE AND MOLD PACKAGE HJ-FET & GaAs MES FET Document No. P10149EJ6V0UM00 (6th edition) Date Published October 1997 N 1989 Printed in Japan [MEMO] 2 No part of this document may be copied or reproduced in any form or by any means without the prior written


    Original     		PDF P10149EJ6V0UM00 gaas fet micro-X Package P1014 NE76184A-T1 t25000 gaas fet micro-X

    UPG2117K

    Abstract: UPG2118K J FET RF Cascode Input upg2118
    Text: NEC's VERSATILE 3V GSM UPG2117K GaAs MMIC POWER AMPLIFIER FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY/SINGLE POSITIVE SUPPLY VOLTAGE • LOW VOLTAGE OPERATION: VDD = +3.2 V • HIGH EFFICIENCY: PAE = 57% TYP • 20 PIN 4 X 4 MM SQUARE MICRO LEAD PACKAGE


    Original     		PDF UPG2117K UPG2117K 10deg UPG2117K-E3 20-pin UPG2118K J FET RF Cascode Input upg2118

    NE3517S03

    Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original     		PDF NE3517S03 NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A NE3517S03 rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid

    NE3517S03-A

    Abstract: NE3517S03-T1C NE3517S03 HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original     		PDF NE3517S03 NE3517S03-T1C NE3517S03-T1D NE3517S03-T1C-A NE3517S03-T1D-A NE3517S03-A PG10787EJ01V0DS NE3517S03-A NE3517S03 HS350

    NE3520S03

    Abstract: nE352
    Text: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package


    Original     		PDF NE3520S03 R09DS0029EJ0100 NE3520S03-T1C NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A NE3520S03 nE352

    Untitled

    Abstract: No abstract text available
    Text: SDA-2000 SDA-2000 GaAs Distributed Amplifier Package: Die, 3.1mm x 1.45mm x 0.102mm RFMD’s SDA-2000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They


    Original     		PDF SDA-2000 102mm SDA-2000 22GHz 410mA DS140204

    Untitled

    Abstract: No abstract text available
    Text: SDA-6000 SDA-6000 GaAs Distributed Amplifier Package: Die, 2.21mm x 1.21mm x 0.102mm RFMD’s SDA-6000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high


    Original     		PDF SDA-6000 102mm SDA-6000 50GHz DS140210

    104208

    Abstract: GSM repeater power amplifier module AN054 1042-08 SDM-08060-B1F high power fet amplifier schematic EDS-104208 SDM-08060
    Text: SDM-08060-BIF Y SDM-08060BIF(Y)869 MHz to 894 MHz Class AB 65 W Power Amplifier Module 869 MHz to 894 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features


    Original     		PDF SDM-08060-BIF SDM-08060BIF SDM-08060-B1F AN054, EDS-104208 104208 GSM repeater power amplifier module AN054 1042-08 high power fet amplifier schematic SDM-08060

    Untitled

    Abstract: No abstract text available
    Text: SDA-7000 SDA-7000 GaAs Distributed Amplifier Package: Die, 2.40mm x 1.21mm x 0.102mm RFMD’s SDA-7000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high


    Original     		PDF SDA-7000 102mm SDA-7000 40GHz 200mA DS140210

    SDM-09060-B1F

    Abstract: TRANSISTORS BJT with low gate voltage NOTE-AN054
    Text: SDM-09060-B1F Y SDM-09060B1F(Y)Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features „ „ „ Available in RoHS Compliant


    Original     		PDF SDM-09060-B1F SDM-09060B1F AN054, EDS-104211 TRANSISTORS BJT with low gate voltage NOTE-AN054

    SLD-2083CZ

    Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
    Text: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features „ „ „ 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz


    Original     		PDF SLD-2083CZ RF083 SLD-2083CZ SLD2083CZ 600S120FT250XT 600S6R8BT250XT 0603CS-16NXJB 0603CS-1N6XJB 0603CS-4N7XJB 915 MHz RFID GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2

    RF6652

    Abstract: HPM 15 smps dc-dc circuits
    Text: RF6652A Power Management IC RF6652A Proposed POWER MANAGEMENT IC Package: 12-Bump WLSCP, 4 x 3 Array 1.65mm x 1.25mm VEN_PA1 VEN_PA2 VEN_PA3 VEN_PA4 VMODE1 VMODE0   Digital Mode Control Compatibility VPWR Reference Voltage Generator Control Logic Features


    Original     		PDF RF6652A RF6652A 12-Bump 650mA GRM188R61A225KE34D RMTMK107BJ105KA-T DS120411 RF6652 HPM 15 smps dc-dc circuits

    SLD-1083CZ

    Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
    Text: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features „ „ „ 4 Watt Output P1dB Single Polarity Supply Voltage


    Original     		PDF SLD-1083CZ RF083 SLD-1083CZ SLD1083CZ 600S680JT250XT T494D106M035AS ECJ2YB1H104K ERJ-3EKF3240V ERJ6GEY0R00V GaN Bias 25 watt InP transistor HEMT 600S680JT250XT

    Untitled

    Abstract: No abstract text available
    Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of


    Original     		PDF

    SUF-8533

    Abstract: gp bjt
    Text: SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier SUF-8533 Preliminary DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier


    Original     		PDF SUF-8533DC SUF-8533 16-Pin, SUF-8533 EDS-106168 SUF-8533PCBA-410 gp bjt

    SUF-8533SR

    Abstract: pHEMT operating junction temperature DS110718
    Text: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier


    Original     		PDF SUF-8533DC SUF-8533 16-Pin, SUF-8533 DS110718 SUF-8533SB SUF-8533SQ SUF-8533SR SUF-8533TR7 pHEMT operating junction temperature DS110718

    SLD-3091FZ

    Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
    Text: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features „ „ „ 30 Watt Output P1dB


    Original     		PDF SLD-3091FZ SLD-3091FZ EDS-104668 SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF

    RF6650

    Abstract: LQM2HPN2R2MG0L material declaration taiyo yuden smps dc-dc circuits Material Declaration MURATA
    Text: RF6650 POWER MANAGEMENT IC Package: 8-Bump WLCSP, 3x3 Array, 1.58mm x1.57mm Features          VPWR C3 A1 RF6650 AGND High Efficiency >95% Transient Response <25s 650mA Load Current Capability Programmable Output Voltage Bypass FET


    Original     		PDF RF6650 650mA RF6650 DS110620 LQM2HPN2R2MG0L material declaration taiyo yuden smps dc-dc circuits Material Declaration MURATA

    RF6280

    Abstract: RD6280
    Text: RF6280 Preliminary POWER MANAGEMENT IC Package Style: 15-Bump WLCSP, 4 x 4 Array, 2 mm x 2 mm Features „ „ „ „ „ „ „ „ „ „ „ „ „ Peak Efficiency Up To 96% High Efficiency Over Various Loads Transient Response < 10 s 650 mA Current Capability


    Original     		PDF RF6280 15-Bump RF6280 DS090304 RD6280

    Untitled

    Abstract: No abstract text available
    Text: bbE d MICROÜIAVE TECHNOLOGY • biE m ao ooooebü a m hm riiiv MwT - 6 18 GHz High Power GaAs FET MicroWave Technology n p 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES n I— I r ■ n 100 IsoJ Is o i I— 130—1 is o l Is J


    OCR Scan     		PDF

    MGF1200

    Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.


    OCR Scan     		PDF MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A