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    G2119 Price and Stock

    Bulgin C6053ALBG21197W

    SWITCH ROCKER DPST 20A 277V
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    DigiKey C6053ALBG21197W Bulk 748 1
    • 1 $11.14
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    Mouser Electronics C6053ALBG21197W
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    TME C6053ALBG21197W 18 1
    • 1 $8.98
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    • 100 $5.65
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    Master Electronics C6053ALBG21197W
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    Bulgin C6053ALBG2-1197W-B

    SWITCH ROCKER DPST 20A 277V
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    DigiKey C6053ALBG2-1197W-B Bulk 100
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    SPC Multicomp G2119

    Enclosure, 5.91" X 7.87" X 2.17"; Enclosure Type:Multipurpose; Enclosure Material:Polycarbonate; External Height - Metric:55Mm; External Width - Metric:200Mm; External Depth - Metric:150Mm; Ip Rating:Ip65; Body Color:Gray Rohs Compliant: Yes |Multicomp Pro G2119
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    Newark G2119 Bulk 5 1
    • 1 $2.63
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    Arcolectric C6053ALBG21197W

    Rocker Sw Dpdt |Arcolectric (Bulgin Limited) C6053ALBG21197W
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    Newark C6053ALBG21197W Bulk 1,000
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    RS C6053ALBG21197W Bulk 21 Weeks 200
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    Arcolectric C6053ALBG2-1197W-B

    Switch, Rocker, Illuminated, Dpst, 16A, 250Vac, Green; Switch Operation:On-Off; Contact Configuration:Dpst; Illumination:Illuminated; Switch Mounting:Panel Mount; Actuator/Cap Colour:Green; Product Range:6050 Series Rohs Compliant: Yes |Arcolectric (Bulgin Limited) C6053ALBG2-1197W-B
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    Newark C6053ALBG2-1197W-B Bulk 100
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    • 100 $15.06
    • 1000 $13.85
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    G2119 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G2119 Hamamatsu Photonics GaAsp photodiode Original PDF

    G2119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G1126-02

    Abstract: G1127-02 G2119
    Text: PHOTODIODE GaAsPフォトダイオード G1126-02, G1127-02, G2119 ショットキ型, 紫外~可視域用 特長 用途 l 低暗電流 l 高紫外感度 l 分析機器 l 色識別 l 紫外線検出 • 一般定格/絶対最大定格 型名 G1126-02 G1127-02


    Original
    PDF G1126-02, G1127-02, G2119 G1126-02 G1127-02 KGPDA0007JA G1126-02 G1127-02 G2119

    Untitled

    Abstract: No abstract text available
    Text: GaAsPフォトダイオード G1126-02 G1127-02 G2119 ショットキ型紫外~可視域用 特長 用途 低暗電流 分析機器 高紫外感度 色識別 紫外線検出 構成/絶対最大定格 型名 外形 寸法図/ 窓材 G1126-02 G1127-02


    Original
    PDF G1126-02 G1127-02 G2119 KGPDB0008JB KGPDB0038JA

    G1126-02

    Abstract: G1127-02 G2119 FA 8 600
    Text: PHOTODIODE GaAsP photodiode G1126-02, G1127-02, G2119 Schottky type for UV to visible range Features Applications l Low dark current l High UV sensitivity l Analytical instruments l Color identification l UV detection • General ratings / Absolute maximum ratings


    Original
    PDF G1126-02, G1127-02, G2119 G1126-02 G1127-02 SE-171 KGPD1005E01 G1126-02 G1127-02 G2119 FA 8 600

    Untitled

    Abstract: No abstract text available
    Text: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/


    Original
    PDF G1126-02 G1127-02 G2119 KGPD1005E02

    UV source led 254 nm peak

    Abstract: G1126-02
    Text: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/


    Original
    PDF G1126-02 G1127-02 G2119 KGPD1005E02 UV source led 254 nm peak

    G1127-02

    Abstract: G1126-02 G2119
    Text: PHOTODIODE GaAsP photodiode G1126-02, G1127-02, G2119 Schottky type for UV to visible range Features Applications l Low dark current l High UV sensitivity l Analytical instruments l Color identification l UV detection • General ratings / Absolute maximum ratings


    Original
    PDF G1126-02, G1127-02, G2119 G1126-02 G1127-02 SE-171 KGPD1005E01 G1127-02 G1126-02 G2119

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 S2506-04 S4707-01 S5077


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    PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


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    PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


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    PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


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    PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Schottky Types Type No. Dimensional Outline (P.44-46)/ Window Material Package Peak Spectral Active Area Effective Response Sensitivity Active Area Wavelength Size Range Ap A (mm) (mm2) (nm) (nm) 190 to 680 610 Photo Sensitivity S Typ. (A/W)


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    PDF G2119 KGPDB0010EA KGPDB0011EA KGPDB0013EA

    UV LED 254nm

    Abstract: led uv 254nm
    Text: GaAsP Photodiodes Schottky Types Type No. Dimensional Outline (P.38-40)/ W indow Material * Package Peak Spectral Active Area Effective Response Sensitivity Active Area Wavelength Size Range (mm) (mm2) A Àp (nm) (nm) Photo Sensitivity S Typ. (A/W) Ap GaP He-Ne


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    PDF 254nm 560nm 633nm G2119 G1747 UV LED 254nm led uv 254nm

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


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    PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Schottky Types “ Type No. Dimensional Outline (P.47 to 49)/ Window Material *1 Package i Area X Peak Sensitivity Wavelength Àp (mm) (mm2) (nm) (nm) 2.3 X 2.3 5.2 Active Area Size Spectral Response Range Effective Photo Sensitivity S (A/W)


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    PDF Isc100 G1126-02 G1127-02 G2119 G2119

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


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    PDF 100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015

    S2840

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


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    PDF 0003b5G S2829 S4404-01 S2041 S2042 KSPDA0061EA KSPDA0062EA D003t G2711-01 S2833-04, S2840

    Untitled

    Abstract: No abstract text available
    Text: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc


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    PDF 0G03b S1223 660nm 780nm 830nm S1223-01 S3071 S1863-01 14mmTO-8 S3883

    Untitled

    Abstract: No abstract text available
    Text: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000


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    PDF 00031a S1406-03 S1406-04 S1406-05 S1406-06 S5590 S5591 S3887 G1957 S1446,

    UV LED 254nm

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Schottky Types Type No. Outline (P.40-42)/ Window Material * Package Peak Spectral Active Area Effective Response Sensitivity Wavelength Active Area Size Range Ap A (mm) (mm2) (nm) (nm) 190 to 680 610 Photo Sensitivity S Typ. (A/W) GaP He-Ne


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    PDF 254nm 560nm 633nm G1747 G2119 UV LED 254nm