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Infineon Technologies AG G20N60HS Electronic Component
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G20N60HS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
g20n60hs Abstract: G20N60 RY 227 Tf 227 10A SGP20N60HS 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3 G20N60HS g20n60hs G20N60 RY 227 Tf 227 10A SGP20N60HS 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS
Untitled Abstract: No abstract text available Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3-21 G20N60HS PG-TO-220-3-1
g20n60hs Abstract: G20N60 SGP20N60HS Diode 400V 20A 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3 G20N60HS SGW20N60nces. g20n60hs G20N60 SGP20N60HS Diode 400V 20A 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS
g20n60hs Abstract: No abstract text available Text: SKP20N60HS SKW20N60HS Preliminary High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:	Original	PDF	SKP20N60HS SKW20N60HS PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) G20N60HS
g20n60hs Abstract: IC2020 Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3-21 G20N60HS PG-TO-220-3-1 IC2020
g20n60 Abstract: g20n60hs Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3-21 G20N60HS PG-TO-220-3-1 g20n60
g20n60hs Abstract: No abstract text available Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP20N60HS SGW20N60HS PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) G20N60HS SGP20N60ubstances.