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    G12 TRANSISTOR Search Results

    G12 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    G12 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G12-l

    Abstract: LSI Logic ASIC g12 High Voltage G12L g12 transistor G12 000
    Text: G12 ASIC Cell-Based Product Features/ Benefits Twelfth Generation ASIC Technology • ASIC technology with 0.18 micron L-drawn Overview LSI Logic’s G12 ASIC Cell-Based product, with its three digital libraries, offers unprecedented options for system ASIC designers to optimize their ASIC or


    Original     		PDF 18-micron 13-micron B20023 G12-l LSI Logic ASIC g12 High Voltage G12L g12 transistor G12 000

    Untitled

    Abstract: No abstract text available
    Text: V23990-P690-G12-PM target datasheet flowCON 2 1200V/150A Features Flow 2 housing ● Input rectifier with brake ● With flowPACK 2 up to 30 kW inverters ● Press-fir pins for easy assembly Target Applications Schematic ● Motor Drive ● Power Generation


    Original     		PDF V23990-P690-G12-PM 200V/150A

    TSA874

    Abstract: No abstract text available
    Text: TSA874 PNP Silicon Planar High Voltage Transistor SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -500V BVCEO -500V IC -150mA VCE SAT Ordering Information Features ● ● -0.5V @ IC / IB = -50mA / -10mA Low Saturation Voltages


    Original     		PDF TSA874 OT-223 -500V -150mA -50mA -10mA -50mA TSA874CW TSA874

    AN5337 ca3028

    Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22
    Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The


    Original     		PDF CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22

    HCFT

    Abstract: LQ12D011 DH758 D1021 D1022 D1023 D1024 DC AC inverter
    Text: LQ12D011 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 11.8" The SHARP LQ12D011 Color TFT-LCD module is a color active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD


    Original     		PDF LQ12D011 LQ12D011 HCFT DH758 D1021 D1022 D1023 D1024 DC AC inverter

    LQ10DX01

    Abstract: tcl tv D1024 transistor 11-G02 D1021 D1022 D1023 DF9B-15P-1V DF9B-15S-1V DF9B-21P-1V
    Text: LQ10DX01 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10DX01 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,


    Original     		PDF LQ10DX01 LQ10DX01 tcl tv D1024 transistor 11-G02 D1021 D1022 D1023 DF9B-15P-1V DF9B-15S-1V DF9B-21P-1V

    g21 Transistor

    Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
    Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor

    Y22 SOT23

    Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor


    Original     		PDF PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11

    transistor C110

    Abstract: Transistor No C110 GLV12-54 led receiver H160 GLV12 TRANSISTOR Y 330
    Text: Photoelectric Sensors GLV12 Series • Light on/dark on mode determined by wiring • Adjustable sensitivity • Visible light source for easy alignment Diffused Mode Retro-Reflective Mode See page 596 See page 597 Features: • Fast 0.7ms response time • Quick-disconnect or cabled versions


    Original     		PDF GLV12 200mm BF5-30 transistor C110 Transistor No C110 GLV12-54 led receiver H160 TRANSISTOR Y 330

    CA3054

    Abstract: cascode transistor array CA3054M CA3054M96
    Text: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential


    Original     		PDF CA3054 120MHz CA3054 300MHz. 120MHz. cascode transistor array CA3054M CA3054M96

    CA3054M96

    Abstract: double channel double balanced demodulators CA3054 CA3054M MS8002
    Text: CA3054 S E M I C O N D U C T O R Dual Independent Differential Amp for Low Power Applications from DC to 120MHz November 1996 Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential amplifiers with associated constant current transistors on a


    Original     		PDF CA3054 120MHz CA3054 300MHz. 120MHz. 1-800-4-HARRIS CA3054M96 double channel double balanced demodulators CA3054M MS8002

    Untitled

    Abstract: No abstract text available
    Text: TS5204 150mA Low Noise LDO Voltage Regulator SOT-23 Pin Definition: 1. Output 2. Input 3. Ground SOT-89 Pin Definition: 1. Output 2. Ground 3. Input DFN 2x2 Pin Definition: 1. Out 2. N/C 3. Ground 4. N/C 5. N/C 6. Input General Description The TS5204 series is an efficient linear voltage regulator with ultra low noise output, very low dropout voltage


    Original     		PDF TS5204 150mA OT-23 OT-89 TS5204 500mV 600uA 100mA)

    Untitled

    Abstract: No abstract text available
    Text: TS5204 150mA Low Noise LDO Voltage Regulator SOT-23 Pin Definition: 1. Output 2. Input 3. Ground SOT-89 Pin Definition: 1. Output 2. Ground 3. Input DFN 2x2 Pin Definition: 1. Out 2. N/C 3. Ground 4. N/C 5. N/C 6. Input General Description The TS5204 series is an efficient linear voltage regulator with ultra low noise output, very low dropout voltage


    Original     		PDF TS5204 150mA OT-23 OT-89 TS5204 500mV 600uA 100mA)

    smd transistor marking G12

    Abstract: SMD Transistor g12 smd diode marking G12 G12 SMD SOT23 smd marking g12 marking g12 2SK1399
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1399 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance 0.55 Not necessary to consider driving current because of it is high input +0.1 1.3-0.1 +0.1 2.4-0.1 Can be driven by a 3.0-V power source 0.4


    Original     		PDF 2SK1399 OT-23 smd transistor marking G12 SMD Transistor g12 smd diode marking G12 G12 SMD SOT23 smd marking g12 marking g12 2SK1399

    ztx614

    Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80


    OCR Scan     		PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 ztx614 2n6718 2N6724 2N6725

    BC337b

    Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
    Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


    OCR Scan     		PDF 2N3262 T0-39 T0-18 ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC337b bc327b 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88

    ZTX458

    Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
    Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO


    OCR Scan     		PDF ZTX658 ZTX758 ZTX458 ZTX558 ZTX6575 ZTX757 MPSA425 MPSA92 BF393 BF493 BF493 BF392 MPSA92 ZTX558 ZTX757 ZTX758 2N5401 BF391

    BC337B

    Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.


    OCR Scan     		PDF 1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BC337B BFS98 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553

    bc327b

    Abstract: bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88

    BF493

    Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.


    OCR Scan     		PDF 1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BF493 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553 ZTX554

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92

    BCY56

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91

    m 60 n 03 g10

    Abstract: No abstract text available
    Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60


    OCR Scan     		PDF 7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10

    BSY55

    Abstract: m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BSY55 m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88