Untitled
Abstract: No abstract text available
Text: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00
|
OCR Scan
|
PDF
|
IRFP440A
G03b332
0G3b333
|
Untitled
Abstract: No abstract text available
Text: IRFP250A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 32 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V
|
OCR Scan
|
PDF
|
IRFP250A
G03b332
0G3b333
|
to 125-10
Abstract: Korea Electronics TRANSISTOR KA350
Text: KA350 Industrial ELECTRONICS T O -3 P 3-TERMINAL 3A POSITIVE ADJUSTABLE VOLTAGE REGULATORS The KA350 is an adjustable 3-terminal positive voltage regulator capa ble of supplying in excess of 3.0 A over an output voltage range of 1 2V to 3 3 V T 0 .2 2 0
|
OCR Scan
|
PDF
|
KA350
KA350
KA350H
G03b0b7
G03b332
0G3b333
to 125-10
Korea Electronics TRANSISTOR
|
induction lamp ballast
Abstract: SGH40N60UF igbt for HIGH POWER induction heating 20A igbt
Text: SGH40N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance APPLICATIONS * * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply Lamp Ballast
|
OCR Scan
|
PDF
|
SGH40N60UF
O-220-F-4L
DD3b33E
003b333
induction lamp ballast
SGH40N60UF
igbt for HIGH POWER induction heating
20A igbt
|
Untitled
Abstract: No abstract text available
Text: IRFP340A A dvanced Power MOSEET FEATURES B V DSS = 4 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 1 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V
|
OCR Scan
|
PDF
|
IRFP340A
O-220-F-4L
DD3b33E
GG3b333
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG POWER SWITCH KA1M0680R FEATURES TO-3P - Precision fixed operating frequency 70KHz - Pulse by pulse over current limiting - Over Current Protection - Over Voltage Protection(min. 23V) - Internal thermal shutdown function - Under voltage lockout - Internal high voltage sense FET
|
OCR Scan
|
PDF
|
KA1M0680R
70KHz)
G03b332
0G3b333
|
Untitled
Abstract: No abstract text available
Text: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■
|
OCR Scan
|
PDF
|
IRFP450A
G03b332
0G3b333
|
A2757
Abstract: pj 66 diode SSH70N10A 1633 MOSFET
Text: A d van ced Power MOSFET S S H 7 0 N 1 0 A FEATURES = 100 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 70 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature
|
OCR Scan
|
PDF
|
SSH70N10A
0QMD315
O-220-F-4L
DD3b33E
003b333
A2757
pj 66 diode
SSH70N10A
1633 MOSFET
|
SGH40N60UFD
Abstract: igbt for induction heating
Text: SGH40N60UFD IGBT CO-PAK FEATURES TO-3P ^ * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance * CO-PAK, IGBT with FRD :Trr = 42nS (Typ) \\ 1 APPLICATIONS AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls
|
OCR Scan
|
PDF
|
SGH40N60UFD
O-220-F-4L
DD3b33E
003b333
SGH40N60UFD
igbt for induction heating
|
KA1M0880
Abstract: KA1M
Text: SAMSUNG POWER SWITCH KA1M0880 FEATURES - Precision fixed operating frequency 70KHz - Pulse by pulse over current limiting - Over load protection - Internal thermal shutdown function - Under voltage lockout - Internal high voltage sense FET - Soft start - Low Start up Current <<0.4mA)
|
OCR Scan
|
PDF
|
KA1M0880
70KHz)
KA1M0880
O-220-F-4L
DD3b33E
003b333
KA1M
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG POWER SWITCH KA2S1265 FEATURES TO-3P - Wide operating frequency range up to 150KHz - Pulse by pulse over current limiting - Over load protection - Over voltage protection min:23V - Internal thermal shutdown function - Under voltage lockout - Internal high voltage sense FET
|
OCR Scan
|
PDF
|
KA2S1265
150KHz
G03b332
0G3b333
|
SGH80N60UFD
Abstract: igbt for induction heating
Text: SGH80N60UFD IGBT CO-PAK FEATURES TO-3P ^ * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=40A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) \\ 1 APPLICATIONS ?c * AC & DC Motor controls * General Purpose Inverters
|
OCR Scan
|
PDF
|
SGH80N60UFD
O-220-F-4L
DD3b33E
003b333
SGH80N60UFD
igbt for induction heating
|
RG53
Abstract: SSH25N40A
Text: SSH25N40A A dvanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = 25 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ V OS = 400V
|
OCR Scan
|
PDF
|
SSH25N40A
0Q40303
O-220-F-4L
DD3b33E
003b333
RG53
SSH25N40A
|
SGH80N60UF
Abstract: IGBT 6500
Text: SGH80N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=40A) * High Input Impedance APPLICATIONS AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply Lamp Ballast ABSOLUTE
|
OCR Scan
|
PDF
|
SGH80N60UF
O-220-F-4L
DD3b33E
003b333
SGH80N60UF
IGBT 6500
|
|
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG POWER SWITCH KA2S0680 FEATURES TO-3P - Wide operating frequency range up to 150KHz - Pulse by pulse over current limiting - Over load protection - Over voltage protection min:23V - Internal thermal shutdown function - Under voltage lockout - Internal high voltage sense FET
|
OCR Scan
|
PDF
|
KA2S0680
150KHz
G03b332
0G3b333
|
Untitled
Abstract: No abstract text available
Text: IRFP150A Advanced Power MOSEET FEATURES B V DSS - 1 00 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 4 ^ • Lower Input Capacitance lD = 4 3 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V
|
OCR Scan
|
PDF
|
IRFP150A
G03b332
0G3b333
|
SSH22N50
Abstract: SSH22N50A
Text: SSH22N50A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ VDS = 500V ■ Lower R DS(ON) : 0.197 n (Typ.)
|
OCR Scan
|
PDF
|
SSH22N50A
b4142
O-220-F-4L
DD3b33E
003b333
SSH22N50
SSH22N50A
|
SGH23N60UFD
Abstract: No abstract text available
Text: SGH23N60UFD IGBT CO-PAK FEATURES TO-3P * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=12A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ) -A \ ^ 1 APPLICATIONS J * * * * * c AC & DC Motor controls General Purpose Inverters
|
OCR Scan
|
PDF
|
SGH23N60UFD
O-220-F-4L
DD3b33E
003b333
SGH23N60UFD
|
GQM0307
Abstract: SSH45N20A d0403
Text: SSH45N20A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance In = 45 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VDS = 200V
|
OCR Scan
|
PDF
|
SSH45N20A
O-220-F-4L
DD3b33E
003b333
GQM0307
SSH45N20A
d0403
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG POWER SWITCH KA2S0765 FEATURES TO-3P - Wide operating frequency range up to 150KHz - Pulse by pulse over current limiting - Over load protection - Over voltage protection min:23V - Internal thermal shutdown function - Under voltage lockout - Internal high voltage sense FET
|
OCR Scan
|
PDF
|
KA2S0765
150KHz
G03b332
0G3b333
|
Untitled
Abstract: No abstract text available
Text: SSH7N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 1-2 ß ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 7.3 A ■ Improved Gate Charge ■ Extended Safe Operating Area TO -3P ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 600V
|
OCR Scan
|
PDF
|
SSH7N60A
O-220-F-4L
G03b332
0G3b333
|
Untitled
Abstract: No abstract text available
Text: A dvanced Power MOSEET I R FEATURES F P 1 4 0 A B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V
|
OCR Scan
|
PDF
|
IRFS140A
G03b332
0G3b333
|
IRFP254A
Abstract: No abstract text available
Text: IRFP254A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 250 V ^ D S o n = 0 . 1 4 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V
|
OCR Scan
|
PDF
|
IRFP254A
O-220-F-4L
DD3b33E
GG3b333
|
Untitled
Abstract: No abstract text available
Text: IRFP244A A dvanced Power MOSEET FEATURES B V DSS = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 16 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V
|
OCR Scan
|
PDF
|
IRFP244A
O-220-F-4L
DD3b33E
GG3b333
|