1500w audio amplifier circuit
Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004 General Information ON Semiconductor Standard Policies
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
1500w audio amplifier circuit
Schottky Diode 80V 6A
1500w PWM 220v
C106MG
marking code SS SOT23
tl494cn inverter datasheet
smps 1500W
MMSZ5231BT1G
dc 220v motor speed control circuit with scr
NCP1200P60G
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First line 7aa ed tms 3874 9v voltage regulator
Abstract: RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508
Text: R O C K W E L L Network access S E M I C O N D U C T O R S Y S T E M S RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY datasheet PROVIDING HIGH SPEED MULTIMEDIA CONNECTIONS September 1998 Preliminary Information This document contains information on a product under development. The parametric information contains target
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RS8250/1/2/3/4/5
RS825x
N825xDSA
First line 7aa ed tms 3874 9v voltage regulator
RS8250EBGC
tms 3874
9v voltage regulator code 9y
mrd 14b
R7173-11
18AF
d725
11AF
PE-68508
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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SEL5618
Abstract: BC547 STV0042 STV0042A bc54713 TDK 267KHZ
Text: STV0042A SATELLITE SOUND AND VIDEO PROCESSORS PRODUCT PREVIEW VIDEO COMPOSITE VIDEO 6-bit 0 to 12.7dB GAIN CONTROL COMPOSITE VIDEO SELECTABLE INVERTER TWO SELECTABLE VIDEO DE-EMPHASIS NETWORKS 4 x 2 VIDEO MATRIX HIGH IMPEDANCE MODE VIDEO OUTPUTS FOR TWIN TUNER APPLICATIONS
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STV0042A
22kHz
06HEX
SHRINK42
SDIP42
PMSDIP42
SEL5618
BC547
STV0042
STV0042A
bc54713
TDK 267KHZ
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CSR 6026
Abstract: TRANSISTOR SMD MARKING CODE B7 TIL311 equivalent 6062 aluminium data sheet CL 6017 bourns 3386 p SMD Transistor A12 data sheet smd code marking 5h application til311 TIL311
Text: TLV2543 Evaluation Module Technical Reference 1999 Mixed-Signal Products Printed in U.S.A. 05/99 SLAU004 TLV2543 Evaluation Module Technical Reference Literature Number: SLAU004 May 1999 Printed on Recycled Paper TLV2543 Evaluation Module Technical Reference
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TLV2543
SLAU004
TLC2543
CSR 6026
TRANSISTOR SMD MARKING CODE B7
TIL311 equivalent
6062 aluminium data sheet
CL 6017
bourns 3386 p
SMD Transistor A12 data sheet
smd code marking 5h
application til311
TIL311
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tvscart
Abstract: 242KHZ ANRS NOISE REDUCTION SYSTEM 179kHz TRANSISTOR c104 STV0042 STV0056A THDA02
Text: STV0056A SATELLITE SOUND AND VIDEO PROCESSOR ADVANCE DATA VIDEO COMPOSITE VIDEO 6-bit 0 to 12.7dB GAIN CONTROL COMPOSITE VIDEO SELECTABLE INVERTER TWO SELECTABLE VIDEO DE-EMPHASIS NETWORKS 6 x 3 VIDEO MATRIX BLACK LEVEL ADJUSTABLE OUTPUT FOR ON-BOARD VIDEOCRYPT DECODER
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STV0056A
SHRINK56
SDIP56
tvscart
242KHZ
ANRS NOISE REDUCTION SYSTEM
179kHz
TRANSISTOR c104
STV0042
STV0056A
THDA02
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472 K5C
Abstract: TRANSISTOR c104 STV0042 STV0056AF TQFP64
Text: STV0056AF SATELLITE SOUND AND VIDEO PROCESSOR . . . . . . . . . . . . SOUND TWO INDEPENDENT SOUND DEMODULATORS PLL DEMODULATION WITH 5-10MHz FREQUENCY SYNTHESIS PROGRAMMABLE FM DEMODULATOR BANDWIDTH ACCOMODATING FM DEVIATIONS FROM ±30kHz TILL ±400kHz
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STV0056AF
5-10MHz
30kHz
400kHz
TQFP64
472 K5C
TRANSISTOR c104
STV0042
STV0056AF
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ut161
Abstract: bip 373 UT162 AOI13 UT163 half adder circuit using 2*1 multiplexer G/transistor bip 109 UT169 SCA92 AOI21
Text: Radiation-Hardened Semicustom Products UTD-R Gate Array Family Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER April 1990 FEA TU RES □ Total dose 1 x 106 rads Si to this data sheet specification according to M IL-STD-883, M ethod 1019 □ Total dose 1 x 107 rads (Si) functional
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IL-STD-883,
cobalt-60
150mA
500msec
-3-4-90-PD
ut161
bip 373
UT162
AOI13
UT163
half adder circuit using 2*1 multiplexer
G/transistor bip 109
UT169
SCA92
AOI21
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Untitled
Abstract: No abstract text available
Text: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz
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F10150H/D
MRF10150H'
MRF10150HX
MRF10150HXV
MRF10150HS
MRF10150HC
376B-02
1PHX31252-1
MRF10150H/D
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D10N2
Abstract: marking dC
Text: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak
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MRF10070H*
1PHX312SO-1
MRF10070H/D
3b72S4
D10N2
marking dC
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by MRF10500H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10500H’ Microwave Pulse Power Transistor 500 Watts Peak NPN 1025-1150 MHz C FTÌ0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz
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MRF10500H/D
MRF10500H'
MRF10500HX
MRF10500HXV
MRF10500HS
MRF10500HC
355D-02
1PHX31254-1
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Sii 9573
Abstract: transistor 21Y S-8252 ed 7aa dude hx 630
Text: R O C K W E L L S E M I C O N D U C T O R S Y S T E M S access RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY *Ü O ¥ ¡8 S N & B -, Rockwell September 1998 fô i S y s iiîs Preliminary Information This do cum e nt contains in fo rm a tio n on a pro du ct under developm ent. The param etric in fo rm a tio n contains target
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RS8250/1/2/3/4/5
RS8250/1/2/3/4/5
RS825x
N825xDSA
Sii 9573
transistor 21Y
S-8252
ed 7aa
dude
hx 630
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Untitled
Abstract: No abstract text available
Text: Order this data sheet MOTOROLA by M R F10350H /D SEMICONDUCTOR TECHNICAL DATA MRF10350H* Microwave Pulse Power Transistor 350 Watts Peak NPN 1025-1150 MHz C P T iO Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz
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F10350H
MRF10350H*
1PHX31253-1
MRF10350H/D
MRF10350H/D
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transistor motorola 351
Abstract: 43b transistor Transistor 43B ANSI S 2.19
Text: M O TO R O L A O rder th is docum ent by BUD43B/D SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS SWITCHMODE NPN Silicon Planar Pow er Transistor The BUD43B has an application specific state-of-the-art die designed for use in
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BUD43B/D
BUD43B
BUD43B
2PHX34546C-0
transistor motorola 351
43b transistor
Transistor 43B
ANSI S 2.19
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08/bup 3110 transistor
Abstract: No abstract text available
Text: GENNUM C O R P O R A T I O F M GX4201 Wideband, Monolithic 1x1 Video Crosspoint Switch DATA SHEET FEATURES CIRCUIT DESCRIPTION • -3 dB bandwidth, 300 MHz with CL = 0 pF TheGX4201 is a w ideb and 1x1 video cro sspoint im plem ented in bip o la r m onolithic tech nolog y. The d e vice is cha racte rized
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GX4201
TheGX4201
800MHz.
1989Gennum
08/bup 3110 transistor
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Untitled
Abstract: No abstract text available
Text: Order this data sheet MOTOROLA by M R F10120H/D SEMICONDUCTOR TECHNICAL DATA MRF10120H* MHz Microwave Power Transistor 120 Watts NPN 960-1215 MHz .ill! CPT0 Designed for long pulsed common base amplifiers. Guaranteed Performance at 1215 MHz - Output Power = 120 Watts Peak
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F10120H/D
MRF10120H*
MRF10120HX
MRF10120HXV
MRF10120HS
MRF10120HC
355C-02
1PHX31251-1
MRF10120H/D
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336E-01
Abstract: No abstract text available
Text: Order this data sheet by MRF10005H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10005H* Microwave Power Transistor 5 Watt NPN 960-1215 MHz Designed for CW and long pulsed common base amplifiers. C P liO Guaranteed Performance at 1215 MHz - Output Power = 5 Watts CW
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MRF10005H*
MRF10005HX
MRF10005HXV
MRF10005HS
MRF10005HC
336E-02
MRF10005H/D
PHX31248-1
MRF10005H/D
336E-01
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LM391 equivalent
Abstract: diode SK2.5 AN-937B lm391 2N2369A ITT MPS2369 equivalent
Text: APPLICATION NO TE 937B Gate Drive Characteristics and Requirements for Power HEXFETs By S T E V E C L E M E N T E Introduction Gate Voltage Limitations The conventional bipolar transistor »essentially a current-driven device. As illustrated in Figure 1 a , a cur
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74C14
AN-937B
LM391 equivalent
diode SK2.5
AN-937B
lm391
2N2369A ITT
MPS2369 equivalent
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Untitled
Abstract: No abstract text available
Text: ,ONY |_ CXA3176N IF Amplifier for FM Receiver AFC Supported Description TheCXA3176N IF a m p lifie r w hich is a low current consumption FM em ploys the new est bip olar process. It is suitable for FM receiver using AFC. Features • Low current consumption :
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CXA3176N
TheCXA3176N
24-pin
24PIN
SSOP-24P-L01
SSOP024-P-0056
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74LS167
Abstract: F199 transistor 74LS382 74LS514 74LS76A 74LS183 transistor b1100 74LS204 74ls171 F199
Text: L F U J I T S U M ICR OELECTRO N ICS • 76C D 13 374T?b2 0003=170 0 ■ n Î-4 2 -1 1 -0 5 " m zæm F U JIT S U @iÆ<§ ñ w m ^ is s E s i GENERAL INFORMATION •. o f standard SSI's and M STs such as 7 4 L S series are prepared as macros called " F - M A C R G " in the library.
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74LS181
74LS183
74LS190
74LS191
74LS192
74LS193
74LS194A
74LS195A
74S260
74LS261
74LS167
F199 transistor
74LS382
74LS514
74LS76A
transistor b1100
74LS204
74ls171
F199
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MOTOROLA POWER TRANSISTOR
Abstract: working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569
Text: by'ANI 083/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1083 Basic Thermal Management of Power Semiconductors BY AL PSHAENICH MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR Thermal management of power semiconductors is often overlooked by design engineers, either through oversight,
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AN1083/D
AN1083/D
MOTOROLA POWER TRANSISTOR
working of astable multivibrator circuit
bipolar transistor tester
mje13008
motorola AN1033
BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS
Tektronix 7603
tester SCR
DL111/D
AN569
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CC650
Abstract: UTC A11 ECL IC NAND
Text: A R rP nR cFLI i i IvMi iIi M NM n Yi DEVICE SPECIFICATION Zs /A / zj - L rF=ü r=û [Ml IMI — — n Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AM C C Q14000 Series of BiCM OS logic arrays is com prised of four products with densities of 2160, 5760,
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Q14000
CC650
UTC A11
ECL IC NAND
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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CBV2
Abstract: 27x10
Text: Reliability o f Hitachi IC Memories 1. Structure IC m em ory devices are classified as N M O S type, C M O S type, and B i-C M O S type. T here are advantages to it's circuit design, layout pattern, degree o f integration, and m anufacturing process. A ll H itachi m em ories are produced using standardized design, m anufacturing, and inspection techniques.
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