Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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der FZ 1600 R 12 KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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A2100-A
Abstract: IC-105
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 M8 18 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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US015
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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der FZ 1600 R 12 KF4
Abstract: 12KF4
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28-270-FZ Single Output Full-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 270V Output 3.7A Output 95%@1.85A / 94% @3.7A Efficiency Operation: -55°C to +100°C The MilQor series of Mil-COTS DC-DC converters brings
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MCOTS-C-28-270-FZ
6-40V
6-50V
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FZ 87 1500 6.3V
Abstract: FZ 83 1500 capacitor FZ 77 1500 6.3v FZ 83 capacitor FZ 75 capacitor 1500 6.3V FZ 77 1000 FZ 83 1000 capacitor FZ 77 1000 6.3v KT 382 FZ electrolytic capacitor
Text: FZ Series CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE Extra low impedance with temperature range -55qC to +105qC Load life of 2000~3000 hours, impedance 5~25% less than KZ series Comply with the RoHS directive 2002/95/EC SPECIFICATIONS Items Characteristics
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2002/95/EC)
120Hz,
FZ 87 1500 6.3V
FZ 83 1500 capacitor
FZ 77 1500 6.3v
FZ 83 capacitor
FZ 75 capacitor 1500 6.3V
FZ 77 1000
FZ 83 1000 capacitor
FZ 77 1000 6.3v
KT 382
FZ electrolytic capacitor
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mosfet vdss500v, vgss 30v
Abstract: KF10N50F KF10N50P MARKING FZ vdss500v, vgss 30v, id 25 A, KF10N50 813F2 FZ 101
Text: SEMICONDUCTOR KF10N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N50P,KF10N50PZ This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF10N50P/F/PZ/FZ
KF10N50P
KF10N50PZ
Fig15.
Fig16.
Fig17.
mosfet vdss500v, vgss 30v
KF10N50F
MARKING FZ
vdss500v, vgss 30v, id 25 A,
KF10N50
813F2
FZ 101
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Untitled
Abstract: No abstract text available
Text: TMS370Cx32 8-BIT MICROCONTROLLER SPNS015C – FEBRUARY 1990 – REVISED FEBRUARY 1997 D D D D FZ AND FN PACKAGES TOP VIEW RESET OP8 OP7 OP6 OP5 OP4 OP3 OP2 OP1 SCITXD CP1 CMOS/ EEPROM/ EPROM Technologies on a Single Device – Mask-ROM Devices for High-Volume
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TMS370Cx32
SPNS015C
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TMS37
Abstract: TMDS3760500A
Text: TMS370Cx32 8-BIT MICROCONTROLLER SPNS015C – FEBRUARY 1990 – REVISED FEBRUARY 1997 D D D D FZ AND FN PACKAGES TOP VIEW RESET OP8 OP7 OP6 OP5 OP4 OP3 OP2 OP1 SCITXD CP1 CMOS/ EEPROM/ EPROM Technologies on a Single Device – Mask-ROM Devices for High-Volume
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TMS370Cx32
SPNS015C
TMS370
TMDS3740850-02
TMDS3740855-09
TMDS3740855-02
TMS37
TMDS3760500A
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E 472M 2KV
Abstract: E 472M 3KV 332M 3kv E f472m DE7150F103MVA1-KC
Text: SAFETY RECOGNIZED C ER AM IC DISC CAPACITORS m tiF fn fn PART NUMBERING SYSTEM DE7150 CAPACITOR TYPE AND SIZE FZ 103 ^ P . _T TEMPERATURE CHARACTERISTICS CAPACITANCE VALUE Temperature range B = -25°C to +85°C F = -25°C to +85°C FZ = -10°C to +60°C
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DE7150
VDE565-1/
E 472M 2KV
E 472M 3KV
332M 3kv E
f472m
DE7150F103MVA1-KC
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Untitled
Abstract: No abstract text available
Text: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module
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A1306 TRANSISTOR
Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)
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O-220
T0-220
C67078-
A1300-A2
A1329-A2
A1301-A2
BUZ11
A1301-A3
A1330-A3
A1331-A2
A1306 TRANSISTOR
t a1306
A1306A
A3206A
A1316-A3
A1318
A1309
a1328
A1013
A1300 transistor
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W
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34032T7
0002G13
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I1130
Abstract: No abstract text available
Text: FZ 300 R 12 KF 2 Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,063 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200 V 300
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I11300
I1130
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560-2 565-1 capacitor
Abstract: capacitor B101K f472m capacitor 472M 222m capacitor 471K CAPACITOR F222M DE7100 DE7090 ac 472m
Text: SAFETY RECOGNIZED CERAMIC DISC CAPACITORS m tiFfntet PART NUMBERING SYSTEM DE7150 FZ 103 P VA1 t I_ K C/M Y CAPACITANCE VALUE CAPACITANCE VOLTAGE LISTED TYPE CAPACITOR TEMPERATURE CHARACTERISTICS Expressed in picofarads and identified by a TOLERANCE VA1=400 VAC: Europe
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DE7150
VDE565-1/UL1414)
AC125=
C22-2
AS3159
E37921
CS2018N
125/250VAC
125VAC
400VAC
560-2 565-1 capacitor
capacitor B101K
f472m
capacitor 472M
222m capacitor
471K CAPACITOR
F222M
DE7100
DE7090
ac 472m
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Untitled
Abstract: No abstract text available
Text: FZ 800 R 16 KF 1 Transistor Transistor Thermische Eigenschaften Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1600 V 800 A lc Thermal properties R th JC DC, pro Baustein / per module 0,020 °C/W R th C K pro Baustein / per module
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15CPC,
DDD2021
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Untitled
Abstract: No abstract text available
Text: fZ 7 SCS-THOMSON A 7I 5 LtEDÏtMflûS STPS1045M _ POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS If a v 10 A V rrm 45 V Vf 0.57 V FEATURES AND BENEFITS • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES
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STPS1045M
S0-10TM
PSO-10,
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TL082
Abstract: No abstract text available
Text: fZ 7 *JM, SGS-THOMSON « re m ra M D Ig S TL082 TL082A - TL082B GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIERS . LOW POWER CONSUMPTION . WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURRENT . OUTPUT SHORT-CIRCUIT PROTECTION
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TL082
TL082A
TL082B
TL082,
TL082B
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Untitled
Abstract: No abstract text available
Text: FZ 300 R 12 KF 2 Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,063 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200 V 300
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Untitled
Abstract: No abstract text available
Text: FZ 800 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,020 °C/W R th J C Elektrische Eigenschaften Electrical properties V ces Maximum rated values 1600 V 800 A R th C K 150 °C - 40 / + 150 °C
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DQD2021
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tl071
Abstract: No abstract text available
Text: fZ 7 *JM, SGS-THOMSON « rem raM D ig s TL071 TL071A - TL071B LOW NOISE SINGLE J-FET OPERATIONAL AM PLIFIERS . LOW POWER CONSUMPTION . WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURRENT . LOW NOISE en = 15nVA/Hz (typ)
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TL071
TL071A
TL071B
15nVA/Hz
TL071,
TL071B
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