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    FW113 Price and Stock

    TE Connectivity HFW1131K04M

    RELAY GEN PURPOSE DPDT 2A 26.5V
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    DigiKey HFW1131K04M Bulk 4 1
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    Interstate Connecting Components HFW1131K04M 84
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    TE Connectivity HFW1131K04

    RELAY GEN PURPOSE DPDT 2A 26.5V
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    Interstate Connecting Components HFW1131K04 9
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    TE Connectivity HFW1130F01

    RELAY GEN PURPOSE DPDT 2A 6V
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    TE Connectivity HFW1131K00

    RELAY GEN PURPOSE DPDT 2A 26.5V
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    Avnet Americas HFW1131K00 Bulk 49 Weeks 22
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    Mouser Electronics HFW1131K00
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    TTI HFW1131K00 Each 22
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    Interstate Connecting Components HFW1131K00
    • 1 $148.0501
    • 10 $140.2579
    • 100 $83.3355
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    Master Electronics HFW1131K00 23
    • 1 $172.16
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    TE Connectivity HFW1130G02

    RELAY GEN PURPOSE DPDT 2A 12V
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    Mouser Electronics HFW1130G02 9
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    Newark HFW1130G02 Bulk 1
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    HFW1130G02 Bulk 30
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    Master Electronics HFW1130G02 103
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    FW113 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FW113 Sanyo Semiconductor Load switch (2devices) Original PDF
    FW113-E Sanyo Semiconductor Transistor Mosfet P-CH 30V 5A 8SOP Original PDF

    FW113 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TA-1215

    Abstract: TA1215 5847 FW113
    Text: Ordering number :EN5847 P-Channel Silicon MOS FET FW113 S/W Load Applications Features Package Dimensions • 4V drive. · Low ON resistance. unit:mm 2129 [FW113] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 1.27 0.43 0.1 1.5 5.0 1:Source1 2:Gate1 3:Source2 4:Gate2


    Original     		EN5847 FW113 FW113] TA-1215 TA1215 5847 FW113 PDF

    FX109

    Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
    Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency


    Original     		MT28F644W18 MT28F644W30 56-Ball 16-bit) 09005aef8098d2b5 MT28F644W30 FX109 FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original     		TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 PDF

    DSA0044716

    Abstract: SR-52
    Text: PRELIMINARY‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 MT28F644W18 1.8V Low Voltage, Extended Temperature Features • • • • • • • • • • • • • • • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multi-partition architecture


    Original     		16-bit) MT28F644W30 DSA0044716 SR-52 PDF

    FY-103

    Abstract: 770MAX
    Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency


    Original     		16-bit) 09005aef8098d2b5 MT28F644W30 FY-103 770MAX PDF

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original     		40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 PDF

    SR52 W 18

    Abstract: FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18
    Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency


    Original     		MT28F644W18 MT28F644W30 56-Ball 16-bit) 09005aef8098d2b5 MT28F644W30 SR52 W 18 FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18 PDF

    FX119

    Abstract: FX117
    Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency


    Original     		16-bit) 09005aef8098d2b5 MT28F644W30 FX119 FX117 PDF

    2SK2437

    Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
    Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process


    OCR Scan     		MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking PDF