FSYC264D1 Search Results

FSYC264D1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FSYC264D1		Fairchild Semiconductor	Radiation Hardened, SEGR Resistant N-Channel Power MOSFET		Original	PDF
FSYC264D1		Fairchild Semiconductor	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs		Original	PDF
FSYC264D1		Intersil	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs		Original	PDF

FSYC264D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
la 4548 Abstract: 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3 Text: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYC264D, FSYC264R la 4548 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
VDMOS reliability testing report Abstract: No abstract text available Text: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYC264D, FSYC264R VDMOS reliability testing report
1E14 Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3 Text: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 34A, 250V, rDS ON = 0.080Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects	Original	PDF	FSYC264D, FSYC264R 36MeV/mg/cm2 MIL-PRF-19500, MIL-PRF-19500. 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
1E14 Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3 Rad Hard in Fairchild for MOSFET Text: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYC264D, FSYC264R 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3 Rad Hard in Fairchild for MOSFET
Untitled Abstract: No abstract text available Text: FSYC264D, FSYC264R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 34A, 250V, rDS ON = 0.080Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.	Original	PDF	FSYC264D, FSYC264R
POWER VDMOS Abstract: No abstract text available Text: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, Tqs ^o N = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	PDF	FSYC264D, FSYC264R FSYC264R POWER VDMOS
Untitled Abstract: No abstract text available Text: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 34A, 250V, r[js ON = 0.080£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s	OCR Scan	PDF	FSYC264D, FSYC264R 36MeV/mg/cm2