2E12
Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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PDF
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FSJ160D,
FSJ160R
2E12
FSJ160D
FSJ160D1
FSJ160D3
FSJ160R
FSJ160R1
FSJ160R3
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FSJ160R3
Abstract: 2E12 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad Hard in Fairchild for MOSFET
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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PDF
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FSJ160D,
FSJ160R
FSJ160R3
2E12
FSJ160D
FSJ160D1
FSJ160D3
FSJ160R
FSJ160R1
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad hard MOSFETS in Harris
Text: S E M I C O N D U C T O R FSJ160D, FSJ160R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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PDF
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FSJ160D,
FSJ160R
1-800-4-HARRIS
2E12
FSJ160D
FSJ160D1
FSJ160D3
FSJ160R
FSJ160R1
Rad hard MOSFETS in Harris
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FSJ160D
Abstract: FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3 2E12 Rad hard MOSFETS in Harris
Text: FSJ160D, FSJ160R Semiconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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PDF
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FSJ160D,
FSJ160R
O-254AA
MIL-S-19500
FSJ160D
FSJ160D1
FSJ160D3
FSJ160R
FSJ160R1
FSJ160R3
2E12
Rad hard MOSFETS in Harris
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Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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Original
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PDF
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FSJ160D,
FSJ160R
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: H A R R IS X FSJ160D, FSJ160R S em iconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSJ160D,
FSJ160R
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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PDF
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FSJ160D,
FSJ160R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: FSJ160D, FSJ160R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Description • 70A, 100V, rDS 0 N = °<>22i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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PDF
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FSJ160D,
FSJ160R
36MeV/mg/cm2
FSJ160D1
FSJ160D3
FSJ160R1
FSJ160R3
FSJ16
1-800-4-HARRIS
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