12V 200A Relay
Abstract: 2E12 FSJ055R4 JANSR2N7430T1 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7430 Data Sheet [ /Title JANS R2N74 30 /Subjec t (Forme rly Availa ble As FSJ05 5R4, Radiati on Harden ed, SEGR Resista nt, N-Cha nnel Power MOSF ETs) /Autho r () /Keyw ords (Forme rly Availa ble As FSJ05 5R4, Radiati on Harden ed, SEGR Formerly Available As FSJ055R4,
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Original
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JANSR2N7430
R2N74
FSJ05
FSJ055R4,
12V 200A Relay
2E12
FSJ055R4
JANSR2N7430T1
Rad Hard in Fairchild for MOSFET
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PDF
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2E12
Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
Text: FSJ055D, FSJ055R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 70A Note 1 , 60V, rDS(ON) = 0.011Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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FSJ055D,
FSJ055R
1-800-4-HARRIS
2E12
FSJ055D
FSJ055D1
FSJ055D3
FSJ055R
FSJ055R1
FSJ055R3
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs January 1998 Features Description • 70A, 60V, rDS ON = 0.014Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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FSJ055D,
FSJ055R
1-800-4-HARRIS
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PDF
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2E12
Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
Text: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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Original
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FSJ055D,
FSJ055R
2E12
FSJ055D
FSJ055D1
FSJ055D3
FSJ055R
FSJ055R1
FSJ055R3
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PDF
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2E12
Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1
Text: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Title SJ05 , J05 bt A, V, 12 m, d rd, GR sist, anwer OSTs) utho eyrds terrpoon, minctor A, V, 12 The Discrete Products Operation of Intersil has developed a
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Original
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FSJ055D,
FSJ055R
2E12
FSJ055D
FSJ055D1
FSJ055D3
FSJ055R
FSJ055R1
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PDF
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relay 12V, 70A
Abstract: No abstract text available
Text: FSJ055D, FSJ055R HARRIS S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs January 1998 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ055D,
FSJ055R
relay 12V, 70A
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 70A Note 1 , 60V, r D S (0 N ) = 0.011 £2 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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OCR Scan
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FSJ055D,
FSJ055R
36MeV/mg/cm2
1-800-4-HARRIS
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R 70A, 60V, 0.014 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 60V, rDS 0 N = 0.014£1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSJ055D,
FSJ055R
36MeV/m
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1999 File Number 4250.4 Features • 7 0 A , 60V, rQg ONi = 0 .0 1 2£2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a
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OCR Scan
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FSJ055D,
FSJ055R
1-800-4-HARRIS
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PDF
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