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Text: 2N3771+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N3771 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N3147 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)75â V(BR)CBO (V)180 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100# I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N1035 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)8.0m
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Text: 2N1074 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0m
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Text: SML3128 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: 2N3772+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N1022A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)5.0
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Text: 2N3771+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: AD104 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)65 I(C) Max. (A)10 Absolute Max. Power Diss. (W)23 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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datasheet ic 7809
Abstract: IC 7809 pin diagram CD Laser pickup focus tracking IC 7809 ic 7809 datasheet 7809 A13944 sanyo optical pickup unit LV1605M function ic 7809
Text: Ordering number : ENN*7809 Preliminary SANYO Semiconductors DATA SHEET Monolithic Linear IC LV1605M Analog Signal Processor for CD Players Overview The LV1605M implements the analog signal processing and servo control required by compact disc players, and, when
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LV1605M
LV1605M
LC78604E
LC78605E,
datasheet ic 7809
IC 7809 pin diagram
CD Laser pickup focus tracking
IC 7809
ic 7809 datasheet
7809
A13944
sanyo optical pickup unit
function ic 7809
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Text: 2N1262 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)80 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)2.0
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Text: 2N3772+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N6355 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.500
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Text: 2N619 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)8.0m
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Text: SML3129 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: 2N3771+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N2709 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)240m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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LA92
Abstract: 63apc
Text: Ordering number : EN7097 Monolithic Linear IC LA9242M For a CD player Servo signal processing IC Overview This LA9242M is a servo signal processing IC for a CD player. Functions • I/V amplifier, RF amplifier with AGC , SLC, APC, FE, TE (with VCA and auto-balance function), focus servo
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Text: 2N3772+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N1022A+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)5.0
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Text: 2N1077 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0m
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