FRD CV Search Results

FRD CV Result Highlights (5)

Part	Manufacturer	Description
RJH65T14DPQ-A0#T0	Renesas Electronics Corporation	IGBT 650V 50A TO-247A Built-In FRD
RJH65T04BDPM-A0#T2	Renesas Electronics Corporation	IGBT 650V 30A TO-3PFP Built-In FRD
RJQ6008BDPM-00#T0	Renesas Electronics Corporation	IGBT 600V 6A TO-3PFM-5 Built-In FRD
RJQ6008DPM-00#T0	Renesas Electronics Corporation	IGBT 600V 6A TO-3PFM-5 Built-In FRD
RBN25H125S1FPQ-A0#CB0	Renesas Electronics Corporation	IGBT 1250V 25A TO-247A Built-In FRD

FRD CV Price and Stock

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TDK Corporation NLCV32T-4R7M-EFRD RF Inductors - SMD 4.7uH 0.2ohms 900mA 3.2x2.5mm AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NLCV32T-4R7M-EFRD		96,147			1 $0.19 10 $0.131 100 $0.114 1000 $0.114 10000 $0.082	Buy Now
TDK Corporation NLCV25T-6R8M-EFRD RF Inductors - SMD 6.8uH 0.92ohms 390mA 2.5x2.0mm AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NLCV25T-6R8M-EFRD		31,979			1 $0.17 10 $0.147 100 $0.129 1000 $0.115 10000 $0.093	Buy Now
TDK Corporation NLCV25T-100K-EFRD RF Inductors - SMD 10uH 1.1ohms 360mA 2.5x2.0mm AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NLCV25T-100K-EFRD		23,798			1 $0.28 10 $0.175 100 $0.12 1000 $0.12 10000 $0.099	Buy Now
TDK Corporation NLCV32T-R10M-EFRD RF Inductors - SMD 0.1uH 0.02ohm 2.85A 3.2x2.5mm AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NLCV32T-R10M-EFRD		22,793			1 $0.26 10 $0.141 100 $0.114 1000 $0.114 10000 $0.082	Buy Now
TDK Corporation NLCV25T-2R2M-EFRD RF Inductors - SMD 2.2uH 0.27ohms 730mA 2.5x2.0mm AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NLCV25T-2R2M-EFRD		19,978			1 $0.26 10 $0.22 100 $0.164 1000 $0.121 10000 $0.109	Buy Now

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FRD CV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MIG12J504L Abstract: marking mitsubishi Text: MIG12J504L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG12J504L Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.	Original	PDF	MIG12J504L MIG12J504L marking mitsubishi
MIG10J504H Abstract: No abstract text available Text: MIG10J504H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J504H Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.	Original	PDF	MIG10J504H MIG10J504H
MIG10J503L Abstract: No abstract text available Text: MIG10J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI	Original	PDF	MIG10J503L MIG10J503L
marking mitsubishi Abstract: MIG15J503L Text: MIG15J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG15J503L MIG15J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI	Original	PDF	MIG15J503L MIG15J503L marking mitsubishi
TOSHIBA IGBT DATA BOOK Abstract: MIG10J504H Text: MIG10J504H TOSHIBA Intelligent IGBT Module MIG10J504H Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •	Original	PDF	MIG10J504H TOSHIBA IGBT DATA BOOK MIG10J504H
MIG12J504L Abstract: No abstract text available Text: MIG12J504L TOSHIBA Intelligent IGBT Module MIG12J504L Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •	Original	PDF	MIG12J504L MIG12J504L
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	PDF	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
diode marking code I5 Abstract: No abstract text available Text: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded	OCR Scan	PDF	D30L60 150ns diode marking code I5
Untitled Abstract: No abstract text available Text: Super Fast Recovery Diode Single Diode m tm OUTLINE SF5L60U 600V 5A Feature • • • • • • ® M ± FRD • is .y 'ix • trr=25ns • 7 J IÆ -J U K •üêHKEE 2kVSIŒ High Voltage Super FRD Low Noise trr=25ns Full Molded Dielectric Strength 2kV	OCR Scan	PDF	SF5L60U
J533 Abstract: S3L60 fly wheel J533-1 Text: Super Fast Recovery Diode Axial Diode OUTLINE S3L60 Unit : mm Package : AX14 W eight l.OÓRÍTyp 6 0 0 V 2 .2 A Feature 26.5 • r a M ± FRD • High Voltage Super FRD •ñ S 'í X • Low Noise • trr=50ns • trr=50ns MA 26.5 -L i. N * KtflliAiKliSM	OCR Scan	PDF	S3L60 S3L60 J533-1 J533 fly wheel J533-1
diode lt 316 Abstract: marking u4 diode Text: Super Fast Recovery Diode Twin Diode OUTLINE SF6LD60M 600V 6A Feature • raffittì FRD • f i Vf= 1.65V • High Voltage Super FRD • 7 / IÆ - J I/ ^ • Full Molded • Œ ï i H Œ 2kV S I I • Dielectric Strength 2kV • Low V f=1 .65V Main Use • Switching Regulator	OCR Scan	PDF	SF6LD60M SF6LD60M J533-1 diode lt 316 marking u4 diode
S20LC60US Abstract: FRD 302 fly wheel diode super fast S20LC60 Text: Super Fast Recovery Diode Twin Diode OUTLINE S20LC60US Unit : m m Package I MTO-3P W eight 6.1g Typ> 600V 20A •» : Feature • ra M ± FRD • • • • • trr=25ns • S jc tf/J v c V U High Voltage Super FRD Low Noise trr=25ns Small B jc Main Use •	OCR Scan	PDF	S20LC60US S20LC60US CJ533-1 FRD 302 fly wheel diode super fast S20LC60
Untitled Abstract: No abstract text available Text: Super Fast Recovery Diode Single Diode mtm SF3L60U OUTLINE U nit I m m Package : FTO-220 W eigh t 1.9 *: T y p 600V 3A 4.5 Feature • ®M± FRD • • • • • • is.y'ix • trr=20ns • 7 J IÆ -J U K •üêHKEE 2kVSIŒ High Voltage Super FRD	OCR Scan	PDF	SF3L60U FTO-220
Untitled Abstract: No abstract text available Text: Super Fast Recovery Diode Single Diode M im SF20L60U OUTLINE U nit I mm Package : FTO-220 W eight 1.9k T y p 4.5 600V 20A Feature • ®M± FRD • High Voltage Super FRD • is . y 'ix • Low Noise • trr=35ns • trr=35ns • 7 J IÆ -J U K • Full Molded	OCR Scan	PDF	SF20L60U FTO-220 J533-1)

F20L60U Abstract: 6BT MARKING F20L60 J533 C180A f20l SF20L60U D0.K F20L6 SF20L60 Text: Super Fast Recovery Diode Single Diode •¿m u OUTLINE Package I FTO-220 SF20L60U Unit :m m W eight 1.9« T y p 4.5 600V 20A Feature • raiHŒ FRD • High Voltage Super FRD • e y - r x • Low Noise • trr=35ns • • trr=35ns • Full Molded K •fê S iü Œ 2kVßfiE	OCR Scan	PDF	SF20L60U FTO-220 F20L60U SF20L60U 110ms J533-1 F20L60U 6BT MARKING F20L60 J533 C180A f20l D0.K F20L6 SF20L60
ST03D-140 Abstract: diode zener ZD 15 diode zener ZD 75 v diode zener ZD 200 U180 tl251c st03d Text: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE S T 3 D - 1 4 Unit:mm Weight 0.65 g Package : A X 10 145V 300W ftft 26.5 26.5 ¡ > 4 .4 Feature ° - ■ Power Zener Diodes with FRD ■ Axial Package	OCR Scan	PDF	ST03D-140 wavefi50HzTiS ST03D-140 diode zener ZD 15 diode zener ZD 75 v diode zener ZD 200 U180 tl251c st03d
S20LC60 Abstract: S20LC60US Text: Super Fast Recovery Diode mtm OUTLINE Twin Diode S20LC60US U n i t : 111111 Package : M TO -3P Weight x lg (T y p 600V 20A : Feature • High Voltage Super FRD •^ ¡Ü Œ F R D • Low Noise • trr=25ns • trr=25ns • 0jcöVJ'£U • Small ßjc	OCR Scan	PDF	S20LC60US S20LC60 S20LC60US
D1NK60 Abstract: AX057 0251K Text: Super Fast Recovery Diode Axial Diode OUTLINE Package I AX057 D1NK60 ♦ 1 6 0 0 V 0 .8 A i UJ Feature • íiü íE F R D • trr=75ns • V f=1.3V U n it : m m W e ig h t 0 .1 9 k T y p 02.6 • High Voltage Super FRD *2 • trr=75ns • Low V f=1 .3V	OCR Scan	PDF	D1NK60 AX057 50e0-52mm J533-1 CJ533-1 D1NK60 AX057 0251K
Untitled Abstract: No abstract text available Text: PRELIMINARY KS0117 MULTIMEDIA VIDEO NTSC DECODER The KS0117 is a member of the Samsung multimedia video chip family. It works In conjunction with the KS0116 Genlock Digitizer. The KS0117 decodes 8 bit digitized NTSC CVBS signal at 27 MHz, and outputs the processed video in 16 or	OCR Scan	PDF	KS0117 KS0117 KS0116 CLK13
4804C Abstract: NA-06 SFH480403 Text: SIEM EN S G a A I A s - L a s e r D io d e 1 0 0 0 m W S F H 4 Ö0 4 0 2 SFH 480403 Features * Monochromatic coherent radiafcon source for pulse and cw-Qpeiation • M Q CV D querifurii-well structure * Dieleotrc asymmetric coated laser mirrors * Emissionwi-dth: 20C u.m	OCR Scan	PDF	E50403 Q627Q2-F355 QaS702-Pieifi 4804C3 4804C NA-06 SFH480403
marking JC diode Abstract: D240LC40 diode marking code 77 DIODE M4 marking Text: Super Fast Recovery Diode Diode Module • ¿ m il OUTLINE D240LC40 400V 240A Feature • S j c f iV l'il' • High lo Rating • trr=150ns • Small 0jc • FA • Semiconductor Process Machine • High power source • Factory Automation • trr=150ns Main Use	OCR Scan	PDF	D240LC40 150ns J533-1 marking JC diode D240LC40 diode marking code 77 DIODE M4 marking
2LU 07 Abstract: No abstract text available Text: Super Fast Recovery Diode Axial Diode OUTLINE M im S2L20U Unit ! mm Package : AX10 Weight 0.65« T yp 2 0 0 V 1.5A Feature 26.5 • trr=35ns • Low Noise • trr=35ns • OA, • ifflÄ. FA • • • • 26.5 -L -J O . U> M <b\A 2 * t a ® * '« « »	OCR Scan	PDF	S2L20U J533-1) 2LU 07
Untitled Abstract: No abstract text available Text: Super Fast Recovery Diode Twin Diode M im OUTLINE S20LC20UST 200V 20A Feature •g y -rx • Low Noise • trr=25ns • tnr=25ns • 9 jc ö V J \£ U • Small 8 jc Main Use • Switching Regulator • 7 5 -f;n -J U • Fly Wheel • f^ .O A • Home Appliance, Office Automation	OCR Scan	PDF	S20LC20UST
s20lc30 Abstract: s20lc30 diode DIODE marking ED marking ed diode marking sb diode diode marking 2D Text: Super Fast Recovery Diode Twin Diode OUTLINE Package I MTO-3P S20LC30 Unit : mm Weight 6.1g Typ> 300V 20A 4 Feature I • 6 jcfiVJ'il' • Low Noise • tnr=30ns • Small 0 jc • ^ 5 1 . OA • iS<S • Switching Regulator • Home Appliance, Office Automation	OCR Scan	PDF	S20LC30 S20LC30 S2QLC30 CJ533-1 s20lc30 diode DIODE marking ED marking ed diode marking sb diode diode marking 2D

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FRD CV Search Results

FRD CV Result Highlights (5)

FRD CV Price and Stock

TDK Corporation NLCV32T-4R7M-EFRD

TDK Corporation NLCV25T-6R8M-EFRD

TDK Corporation NLCV25T-100K-EFRD

TDK Corporation NLCV32T-R10M-EFRD

TDK Corporation NLCV25T-2R2M-EFRD

FRD CV Datasheets Context Search

MIG12J504L

MIG10J504H

MIG10J503L

marking mitsubishi

TOSHIBA IGBT DATA BOOK

MIG12J504L

RJK03P7DPA

diode marking code I5

Untitled

J533

diode lt 316

S20LC60US

Untitled

Untitled

F20L60U

ST03D-140

S20LC60

D1NK60

Untitled

4804C

marking JC diode

2LU 07

Untitled

s20lc30