Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FQI13N06 Search Results

    SF Impression Pixel

    FQI13N06 Price and Stock

    Rochester Electronics LLC FQI13N06TU

    MOSFET N-CH 60V 13A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI13N06TU Tube 888
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.34
    • 10000 $0.34
    		Buy Now

    onsemi FQI13N06TU

    MOSFET N-CH 60V 13A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI13N06TU Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.31318
    • 10000 $0.31318
    		Buy Now

    Rochester Electronics LLC FQI13N06LTU

    MOSFET N-CH 60V 13.6A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI13N06LTU Tube 386
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.78
    • 10000 $0.78
    		Buy Now

    onsemi FQI13N06LTU

    MOSFET N-CH 60V 13.6A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI13N06LTU Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.3463
    • 10000 $0.3463
    		Buy Now

    Fairchild Semiconductor Corporation FQI13N06LTU

    13.6A, 60V, 0.14ohm, N-Channel Power MOSFET, TO-262AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FQI13N06LTU 2,955 1
    • 1 $0.7476
    • 10 $0.7476
    • 100 $0.7027
    • 1000 $0.6355
    • 10000 $0.6355
    		Buy Now
    Find more FQI13N06 price and stock on Findchips.com

    FQI13N06 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQI13N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF
    FQI13N06L Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF
    FQI13N06L Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQI13N06LTU Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF
    FQI13N06TU Fairchild Semiconductor 60V N-Channel QFET Original PDF

    FQI13N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQB13N06

    Abstract: FQI13N06
    Text: QFET TM FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB13N06 FQI13N06 FQI13N06

    FQB13N06L

    Abstract: FQI13N06L
    Text: QFET TM FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB13N06L FQI13N06L FQI13N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB13N06 FQI13N06 FQI13N06TU O-262

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB13N06L, FQI13N06L FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 4.8nC Typ.


    Original     		PDF FQB13N06L, FQI13N06L FQB13N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB13N06L FQI13N06L FQI13N06LTU O-262

    FQB13N06L

    Abstract: FQI13N06L
    Text: FQB13N06L / FQI13N06L April 2000 QFET TM FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB13N06L FQI13N06L FQI13N06L

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    SSI5N60A

    Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
    Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -


    Original     		PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQB13N06L

    Abstract: FQI13N06L 136A ls136
    Text: Q F E T N-CHANNEL FQB13N06L, FQI13N06L FEATURES 60 V BV qss = Advanced New Design r d s ON Avalanche Rugged Technology = 0.11 £i lD =13.6A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k |2-p a k


    OCR Scan     		PDF FQB13N06L, FQI13N06L FQB13N06L FQI13N06L 136A ls136

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB13N06L, FQI13N06L FEATURES BVqss = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 4.8nC Typ.


    OCR Scan     		PDF FQB13N06L, FQI13N06L Fig12.