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    FQI12N60 Search Results

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    FQI12N60 Price and Stock

    Rochester Electronics LLC FQI12N60TU

    MOSFET N-CH 600V 10.5A I2PAK
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    DigiKey FQI12N60TU Tube 211
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    onsemi FQI12N60TU

    MOSFET N-CH 600V 10.5A I2PAK
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    DigiKey FQI12N60TU Tube 1,000
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    Rochester Electronics LLC FQI12N60CTU

    MOSFET N-CH 600V 12A I2PAK
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    DigiKey FQI12N60CTU Tube 275
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    Fairchild Semiconductor Corporation FQI12N60CTU

    12A, 600V, 0.65ohm, N-Channel Power MOSFET '
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    Rochester Electronics FQI12N60CTU 2,882 1
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    Fairchild Semiconductor Corporation FQI12N60TU

    10.5A, 600V, 0.7ohm, N-Channel Power MOSFET, TO-262AA '
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    Rochester Electronics FQI12N60TU 627 1
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    FQI12N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQI12N60 Fairchild Semiconductor 600 V N-Channel MOSFET Original PDF
    FQI12N60 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQI12N60C Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF
    FQI12N60CTU Fairchild Semiconductor Transistor Mosfet N-CH 600V 12A 3I2PAK Original PDF
    FQI12N60TU Fairchild Semiconductor 600V N-Channel QFET Original PDF

    FQI12N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQB12N60 / FQI12N60 April 2000 QFET TM FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB12N60 FQI12N60

    Untitled

    Abstract: No abstract text available
    Text: TM FQB12N60C / FQI12N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB12N60C FQI12N60C 100Fairchild FQI12N60C FQI12N60CTU

    FQB12N60

    Abstract: FQI12N60
    Text: FQB12N60 / FQI12N60 April 2000 QFET TM FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB12N60 FQI12N60 FQI12N60

    power mosfet 600v

    Abstract: N-Channel 600V MOSFET FQB12N60C FQB12N60CTM FQI12N60C FQI12N60CTU Voltage-600V
    Text: QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB12N60C FQI12N60C FQI12N60C power mosfet 600v N-Channel 600V MOSFET FQB12N60CTM FQI12N60CTU Voltage-600V

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ.


    Original     		PDF FQB12N60, FQI12N60 FQB12N60

    12A600VRDS

    Abstract: No abstract text available
    Text: TM FQB12N60C / FQI12N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB12N60C FQI12N60C 100Fairchild FQB12N60CTM 12A600VRDS

    FQB12N60C

    Abstract: FQI12N60C Z1075
    Text: TM FQB12N60C / FQI12N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB12N60C FQI12N60C FQI12N60C Z1075

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    3phase MOSFET INVERTER

    Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
    Text: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.


    Original     		PDF Power247TM, 3phase MOSFET INVERTER 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    FSD210 8-pin

    Abstract: dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET
    Text: FSA4157/FSA1156/FSA1157 Industry’s Smallest Low Ohm Switches The FSA4157, FSA1156 and FSA1157 are 1 ohm single pole/double throw analog switches in MicroPakTM packaging that provides an 84% space savings over traditional SOT-23 packaging. These devices feature low On resistance RON


    Original     		PDF FSA4157/FSA1156/FSA1157 FSA4157, FSA1156 FSA1157 OT-23 FSA1156 FSA1157 FSA4157/FSA1156/FSA1157 FIN1215/FIN1216/FIN1217/FIN1218 FSD210 8-pin dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET

    fairchild mosfet selection guide

    Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
    Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics


    Original     		PDF Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ.


    OCR Scan     		PDF FQB12N60, FQI12N60 0-55Q D2PAK/TO-263 D2PAK/TO-263

    FQB12N60

    Abstract: FQI12N60 lS105 mosfet 12A 600V
    Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BV dss = 600V Advanced New Design R D S O N = ° - 7 i2 Avalanche Rugged Technology lD = 10.5A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k


    OCR Scan     		PDF FQB12N60, FQI12N60 0-55Q Dissipation60, D2PAK/TO-263 PAK/TO-263 FQB12N60 FQI12N60 lS105 mosfet 12A 600V