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    onsemi FQB19N20LTM

    MOSFET N-CH 200V 21A D2PAK
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    Mouser Electronics FQB19N20LTM 30,958
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    EBV Elektronik FQB19N20LTM 4,800 15 Weeks 800
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    onsemi FQB19N20TM

    MOSFET N-CH 200V 19.4A D2PAK
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    DigiKey FQB19N20TM Cut Tape 2,243 1
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    FQB19N20TM Digi-Reel 2,243 1
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    FQB19N20TM Reel 800 800
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    FQB19N20TM Reel 14 Weeks 800
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    Mouser Electronics FQB19N20TM 11,924
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    Verical FQB19N20TM 5,600 316
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    FQB19N20TM 786 7
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    Arrow Electronics FQB19N20TM Cut Strips 786 14 Weeks 1
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    Newark FQB19N20TM Reel 800
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    Rochester Electronics FQB19N20TM 5,600 1
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    Richardson RFPD FQB19N20TM 800
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    Avnet Silica FQB19N20TM 15 Weeks 800
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    EBV Elektronik FQB19N20TM 16 Weeks 800
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    Flip Electronics FQB19N20TM 42,403
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    Wuhan P&S FQB19N20TM 660 1
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    onsemi FQB19N20CTM

    MOSFET N-CH 200V 19A D2PAK
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    Fairchild Semiconductor Corporation FQB19N20TM

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    Bristol Electronics FQB19N20TM 189
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    Quest Components FQB19N20TM 151
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    Rochester Electronics FQB19N20TM 254 1
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    Fairchild Semiconductor Corporation FQB19N20L

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    Quest Components FQB19N20L 52
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    FQB19N20 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB19N20 Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    FQB19N20C Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQB19N20CTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 19A D2PAK Original PDF
    FQB19N20CTM Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQB19N20L Fairchild Semiconductor 200 V Logic N-Channel MOSFET Original PDF
    FQB19N20LTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 21A D2PAK Original PDF
    FQB19N20LTM Fairchild Semiconductor 200V N-Channel Logic Level QFET Original PDF
    FQB19N20LTM_NL Fairchild Semiconductor 200V N-Channel Logic Level QFET Original PDF
    FQB19N20TM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 19.4A D2PAK Original PDF
    FQB19N20TM Fairchild Semiconductor 200V N-Channel QFET Original PDF

    FQB19N20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB19N20L, FQI19N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ.


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    FQB19N20L, FQI19N20L FQB19N20L PDF

    FQB19N20

    Abstract: No abstract text available
    Text: FQB19N20 / FQI19N20 N-Channel QFET MOSFET 200 V, 19.4 A, 150 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


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    FQB19N20 FQI19N20 FQI19N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB19N20L N-Channel QFET MOSFET 200 V, 21 A, 140 mΩ Description Features • 21̀ A, 200 V, RDS on = 140 mΩ (Max.) @ VGS = 10 V,. ID = 9.7 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


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    FQB19N20L PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB19N20, FQI19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ.


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    FQB19N20, FQI19N20 FQB19N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB19N20 N-Channel QFET MOSFET 200 V, 19.4 A, 150 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


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    FQB19N20 PDF

    FQB19N20C

    Abstract: FQI19N20C
    Text: FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB19N20C/FQI19N20C FQB19N20C FQI19N20C PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB19N20L, FQI19N20L FEATURES BVDSS = 200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ.


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    FQB19N20L, FQI19N20L FQB19N20L PDF

    electronic ballast kW power

    Abstract: FQB19N20C FQI19N20C
    Text: QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB19N20C/FQI19N20C FQB19N20C/FQI19N20C electronic ballast kW power FQB19N20C FQI19N20C PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB19N20C/FQI19N20C FQB19N20C/FQI19N20C PDF

    19n20c

    Abstract: 19n20 FQB19N20CTM
    Text: FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB19N20C/FQI19N20C FQB19N20C FQB19N20CTM 19n20c 19n20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB19N20C N-Channel QFET MOSFET 200 V, 19 A, 170 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    FQB19N20C PDF

    fairchild power mosfet

    Abstract: No abstract text available
    Text: FQB19N20L / FQI19N20L N-Channel QFET MOSFET 200 V, 21 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original
    FQB19N20L FQI19N20L FQI19N20L fairchild power mosfet PDF

    ET110

    Abstract: No abstract text available
    Text: FQB19N20C / FQI19N20C N-Channel QFET MOSFET 200 V, 19 A, 170 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    FQB19N20C FQI19N20C FQI19N20C ET110 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original
    PDF

    Rubycon photoflash

    Abstract: 12V, 20A automatic charger LT3751 zener marking hitachi DCT20EFD AC Transformer 50A 100V inductance usim diode sud33n20 NMOS F12 400V to 48V converter
    Text: LT3751 Capacitor Charger Controller with Regulation FEATURES DESCRIPTION n The LT 3751 is a high input voltage capable flyback controller designed to rapidly charge a large capacitor to a user-adjustable target voltage set by the transformer turns ratio and three external resistors. An optional feedback pin


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    LT3751 10-Lead LT3585-0/LT3585-1 LT3585-2/LT3585-3 LT3585-3 DFN-10 LT3750 300ms MSOP-10 3751f Rubycon photoflash 12V, 20A automatic charger LT3751 zener marking hitachi DCT20EFD AC Transformer 50A 100V inductance usim diode sud33n20 NMOS F12 400V to 48V converter PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    Rubycon photoflash

    Abstract: GA3460-BL LT3751FE LT3751 ntb30n20t4g pmos 40a 1000v 750032051 transformer DCT20EFD DCT15EFD-U44S003 PS2801
    Text: LT3751 High Voltage Capacitor Charger Controller with Regulation FEATURES n n n n n n n n n n DESCRIPTION Charges Any Size Capacitor Low Noise Output in Voltage Regulation Mode Stable Operation Under a No-Load Condition Integrated 2A MOSFET Gate Driver with Rail-to-Rail


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    LT3751 20-Pin 20-Lead capacitor20V, 10-Lead LT3585-0/LT3585-1/ LT3585-2/LT3585-3 LT3585-3 DFN-10 LT3750 Rubycon photoflash GA3460-BL LT3751FE LT3751 ntb30n20t4g pmos 40a 1000v 750032051 transformer DCT20EFD DCT15EFD-U44S003 PS2801 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB19N20, FQI19N20 FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31 nC Typ.


    OCR Scan
    FQB19N20, FQI19N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB19N20L, FQI19N20L QFET N-CHANNEL FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ.


    OCR Scan
    FQB19N20L, FQI19N20L B19N20L PDF