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    FQA13N80 Price and Stock

    onsemi FQA13N80-F109

    MOSFET N-CH 800V 12.6A TO3PN
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    DigiKey FQA13N80-F109 Tube 463 1
    • 1 $5.68
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    • 100 $3.45433
    • 1000 $2.79837
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    Mouser Electronics FQA13N80-F109 378
    • 1 $5.68
    • 10 $5.45
    • 100 $3.53
    • 1000 $2.79
    • 10000 $2.75
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    Verical FQA13N80-F109 360 30
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    Arrow Electronics FQA13N80-F109 370 16 Weeks 30
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    • 100 $2.992
    • 1000 $2.62
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    FQA13N80-F109 350 98 Weeks 1
    • 1 $2.2966
    • 10 $2.2518
    • 100 $2.013
    • 1000 $1.8544
    • 10000 $1.8432
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    Newark FQA13N80-F109 Bulk 450
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    Onlinecomponents.com FQA13N80-F109
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    • 100 $3.07
    • 1000 $2.76
    • 10000 $2.64
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    Rochester Electronics FQA13N80-F109 12,380 1
    • 1 $3.11
    • 10 $3.11
    • 100 $2.92
    • 1000 $2.64
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    TME FQA13N80-F109 1
    • 1 $3.94
    • 10 $3.54
    • 100 $3.13
    • 1000 $2.62
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    Richardson RFPD FQA13N80-F109 450
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    Avnet Silica FQA13N80-F109 17 Weeks 30
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    EBV Elektronik FQA13N80-F109 450 18 Weeks 30
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    New Advantage Corporation FQA13N80-F109 60 1
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    • 100 $3.6
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    Wuhan P&S FQA13N80-F109 14,749 1
    • 1 $7.81
    • 10 $7.81
    • 100 $4.99
    • 1000 $3.78
    • 10000 $3.78
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    Rochester Electronics LLC FQA13N80

    MOSFET N-CH 800V 12.6A TO3PN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQA13N80 Tube 134
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    • 1000 $2.39
    • 10000 $2.39
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    onsemi FQA13N80

    MOSFET N-CH 800V 12.6A TO3PN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQA13N80 Tube
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    onsemi FQA13N80_F109

    Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3PN T/R - Rail/Tube (Alt: FQA13N80-F109)
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    Avnet Americas FQA13N80_F109 Tube 16 Weeks 450
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    • 1000 $2.69723
    • 10000 $2.63377
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    Fairchild Semiconductor Corporation FQA13N80

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    Bristol Electronics FQA13N80 300
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    Quest Components FQA13N80 240
    • 1 $4.6125
    • 10 $4.6125
    • 100 $2.8444
    • 1000 $2.8444
    • 10000 $2.8444
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    FQA13N80 1
    • 1 $4.6125
    • 10 $4.6125
    • 100 $4.6125
    • 1000 $4.6125
    • 10000 $4.6125
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    Rochester Electronics FQA13N80 134 1
    • 1 $2.3
    • 10 $2.3
    • 100 $2.16
    • 1000 $1.96
    • 10000 $1.96
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    ComSIT USA FQA13N80 2,220
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    Find more FQA13N80 price and stock on Findchips.com

    FQA13N80 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQA13N80 Fairchild Semiconductor 800 V N-Channel MOSFET Original PDF
    FQA13N80 Fairchild Semiconductor 800V N-Channel MOSFET Original PDF
    FQA13N80 Fairchild Semiconductor 800V N-Channel MOSFET Original PDF
    FQA13N80 Fairchild Semiconductor 800V N-Channel MOSFET Original PDF
    FQA13N80_F109 Fairchild Semiconductor 800V N-Channel MOSFET; Package: TT3P0; No of Pins: 3; Container: Rail Original PDF
    FQA13N80-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 12.6A TO-3P Original PDF

    FQA13N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 800V 3A

    Abstract: FQA13N80 F109
    Text: QFET FQA13N80 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA13N80 FQA13N80 MOSFET 800V 3A F109

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA13N80_F109 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA13N80

    fqa13n80

    Abstract: No abstract text available
    Text: FQA13N80_F109 N-Channel QFET MOSFET 800 V, 12.6 A, 750 mΩ Features Description • 12.6 A, 800 V, RDS on = 750 mΩ (Max.) @ VGS = 10 V ID = 6.8 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


    Original     		PDF FQA13N80

    FQA13N80

    Abstract: F109
    Text: QFET FQA13N80_F109 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA13N80 F109

    Untitled

    Abstract: No abstract text available
    Text: FQA13N80_F109 N-Channel QFET MOSFET 800 V, 12.6 A, 750 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQA13N80

    FQA13N80

    Abstract: No abstract text available
    Text: QFET TM FQA13N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA13N80 FQA13N80

    Untitled

    Abstract: No abstract text available
    Text: FQA13N80_F109 N-Channel QFET MOSFET 800 V, 12.6 A, 750 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQA13N80

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    FQA90N08

    Abstract: FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08
    Text: Discrete MOSFETs TO-3P RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3P N-Channel FQA170N06 60 Single 0.0056 - - - 220 170 375 FQA85N06 60 Single 0.01 - - - 86 100 214


    Original     		PDF FQA170N06 FQA85N06 FQA65N06 FQA160N08 FQA90N08 FQA70N08 FQA58N08 FQA44N08 SFH9240 SFH9250L FQA90N08 FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    fqa38n30

    Abstract: FGA25N120 FGA15N120ANDTU FQA11N90C TO-3P package SGH80N60UFTU FQA9N90 MARKING EA MOSFET IRFP460C FGA15N120ANTU
    Text: Date Created: 2/8/2004 Date Issued: 2/23/2004 PCN # 20040605 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildse23N60UFDTU SGH30N60RUFDTU SGH40N60UFDTU SGH5N120RUFTU SSH10N60B SSH70N10A TIP141LTU TIP145TU TIP41CPTU FJA13009TU fqa38n30 FGA25N120 FGA15N120ANDTU FQA11N90C TO-3P package SGH80N60UFTU FQA9N90 MARKING EA MOSFET IRFP460C FGA15N120ANTU

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    IRF250N

    Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
    Text: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100


    Original     		PDF 2N5881 O-204AA/TO-3 DTS4067 DTS424 O-204AA/TO-3: DTS425 IRF250N ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714

    NL2024

    Abstract: lithium 10.8v LG chem FS6S1565RB saphion n charge KA5Q0765R P1625 FS7M0880 GP Batteries KA1M0880B
    Text: P O W E R F O R P O R TA B L E E L E C T R O N I C S Rechargeable Batteries Keeping Up with Current Demand By Jeff Shepard W IRELESS MOBILITY is one of the major forces driving demand for, and demands on, rechargeable batteries. The latest devices in the mobile world


    Original     		PDF 710Wh/kg 300Wh/l, NL2024 lithium 10.8v LG chem FS6S1565RB saphion n charge KA5Q0765R P1625 FS7M0880 GP Batteries KA1M0880B

    fqa38n30

    Abstract: IRFP460C equivalent FQA11N90C FQA24N50 SFH9240 FJA13009TU FQA13N80 fqa16n50 bjt test plan FJA13009
    Text: Date Created: 3/3/2004 Date Issued: 3/10/2004 PCN # 20040605-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is the first revision of the PCN 20040605 to issue Final PCN. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0040605-A KSC3552OTU KSC4010RTU KSC5024YTU KSC5025YTU KSC5030OTU SFH154 SFH9240 SSH10N60B SSH7N60B fqa38n30 IRFP460C equivalent FQA11N90C FQA24N50 SFH9240 FJA13009TU FQA13N80 fqa16n50 bjt test plan FJA13009