FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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FLR026XV
Abstract: No abstract text available
Text: FLR026XP, FLR026XV n eP ,. G a A s F E T a n d H E M T Chips r U J I 1b U FEATURES • High Output Power: P-|d B = 23.0dBm Typ. • High Gain: G 1dB = 7.5dB(Typ.)(FLR026XP) G 1dB = 8.5dB(Typ.)(FLR026XV) • High PAE: r\addl = 28%(Typ.)(FLR026XP) *ladd = 29%(Typ.)(FLR026XV)
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FLR026XP,
FLR026XV
FLR026XP)
FLR026XV)
FLR026XV
Temperatur51
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FLR026XV
Abstract: FLR026XP
Text: FLR026XP, FLR026XV p | ,<f° GaAs F E T and H E M T Chips rUJIIbU ,. FEATURES • High Output Power: P-|<jB = 23.0dBm Typ. • High Gain: G-j^B = 7.5dB(Typ.)(FLR026XP) G 1dB = 8.5dB(Typ.)(FLR026XV) • High PAE: n adc| = 28%(Typ.)(FLR026XP) il add = 29%(Typ.)(FLR026XV)
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FLR026XP,
FLR026XV
FLR026XP)
FLR026XV)
FLR026XV
FLR026XP
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Untitled
Abstract: No abstract text available
Text: F LR026XP ; F L R 0 2 6 X V GaAs F E T and M IM T Chips ELECTRICAL CHARACTERISTICCS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current >DSS Test Conditions Min. - 50 - mS -1.0 -2.0 -3.5 V -4 - - V 22 23 - dBm 6.5 7.5 - dB - 28 - % 22 23 - dBm
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LR026XP
18GHz
18GHz
25jim
FLR026XP
FLR026XV
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FLR024FH
Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D
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FLM7785-8C/D
FLM8596-4C
FLM8596-8C
FLR014FH
FLR014XP
FLC311MG-4
FLS31ME
36dBm,
FLS50
FLR024FH
FLX102MH-12
flx202mh-12
FLS09ME
FLS09
FLR016XP
FLR014FH
FSC10FA
FLR056XV
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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