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    FLK027XP Search Results

    FLK027XP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLK027XP Fujitsu GaAs FET & HEMT Chip Original PDF
    FLK027XP-E1 Fujitsu FET: P Channel: ID 0.15 A Original PDF

    FLK027XP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    108 to 174 mhz

    Abstract: FLK027XP FLK027XV
    Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		PDF FLK027XP, FLK027XV FLK027XV FCSI0598M200 108 to 174 mhz FLK027XP

    1278n

    Abstract: No abstract text available
    Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		PDF FLK027XP, FLK027XV FLK027XV 1278n

    Untitled

    Abstract: No abstract text available
    Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		PDF FLK027XP, FLK027XV FLK027XV FLK027XP

    FLK027XP

    Abstract: FLK027XV
    Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		PDF FLK027XP, FLK027XV FLK027XV Unit4888 FLK027XP

    Untitled

    Abstract: No abstract text available
    Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		PDF FLK027XP, FLK027XV FLK027XV FCSI0598M200

    FLK027XP

    Abstract: GaAs FET HEMT Chips FLK027XV
    Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		PDF FLK027XP, FLK027XV FLK027XV FLK027XP FLK027XP GaAs FET HEMT Chips

    FLK027XP

    Abstract: FLK027XV urn 3177 GaAs FET HEMT Chips
    Text: FLK027XP, FLK027XV - GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION


    OCR Scan     		PDF FLK027XP, FLK027XV FLK027XV FCSI0598M200 FLK027XP urn 3177 GaAs FET HEMT Chips

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet