L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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NS 2N3
Abstract: No abstract text available
Text: Preliminary W29S201 128K x 16 CMOS FLASH MEMORY WITH SYNCHRONOUS BURST READ GENERAL DESCRIPTION The W29S201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The W29S201 supports both assynchronous & high performance synchronous burst read modes. The device
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W29S201
12-volt
NS 2N3
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W49S201
Abstract: No abstract text available
Text: Preliminary W49S201 128K x 16 CMOS FLASH MEMORY WITH SYNCHRONOUS BURST READ GENERAL DESCRIPTION The W49S201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The W49S201 supports both asynchronous & high performance synchronous burst read modes. The
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W49S201
W49S201
12-volt
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Untitled
Abstract: No abstract text available
Text: Preliminary W29F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
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W29F201
W29F201
12-volt
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W49F201
Abstract: No abstract text available
Text: Preliminary W49F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
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W49F201
W49F201
12-volt
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flash 48pin dqs
Abstract: No abstract text available
Text: M ICRON I QUANTUM Devices, HC. ADVANCE 1 MEG x 16 A D V A N C E D B O O T BL O C K FLASH M E M O R Y MT28F160A3 FLASH MEMORY Sm art 3 FEATURES * * * * * * * * * * PIN A S S I G N M E N T Top View Thirty-nine erase blocks: Two 4K-word boot blocks (protected)
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MT28F160A3
32K-word
110ns,
150ns
48-Pin
flash 48pin dqs
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Untitled
Abstract: No abstract text available
Text: I FUJITSU SEMICONDUCTOR , ^ ^ . ^ . ^ ^ « ^ , - ^ - ' ^ - ^ « . ^ - ^ DATA SHEET rm nCftK o n u o i P S 0 5 - 2 0 8 2 1 - ,._ FLASH MEMORY CMOS 8 M 1 M x 8 B I T MBM29F080-12-X DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements
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MBM29F080-12-X
48-pin
44-pin
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MBM29LV200B
Abstract: No abstract text available
Text: FLASH MEMORY B l I l i 2M 256K x 8/128K x 16 BIT M B M 2 9 L V 2 0 0 T - 12- x / M B M 2 9 L V 2 0 0 B - 12- x
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8/128K
48-pin
44-pin
MBM29LV200B
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS • FEATURES • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standards Pinout and software compatible with single-power supply Flash
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48-pin
40-pin
44-pin
F9703
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M29F800A3BT12
Abstract: M29F800A3BR10 M29F800A3BR80
Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 8M CMOS Flash Memory The M29F800A3 is a 3.3 V high speed 8,388,608-bit CMOS Boot Block Flash Memory suitable for use in systems such as mobile, personal computing, and communication products.
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M29F800A3/D
M29F800A3
608-bit
48-pin
M29F800A3C
RMFAX09email
M29F800A3BT12
M29F800A3BR10
M29F800A3BR80
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Untitled
Abstract: No abstract text available
Text: m iiB m m m am m . lliilllllllllllllllllllllllllllllllllllll M B M 2 9 F 0 1 6 -12-x • FEATURES • • • • • • • • • • • • • • • • Single 5.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands
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-12-x
48-pin
F9703
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sa29 pinout
Abstract: 29LV160T TOP SIDE MARKING m03 29LV160
Text: FLASH MEMORY CM OS 8 / 1 X* 1 2 -m M X 1 6 B M 29 B I T ‘9 0 -X /-1 2 -X • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs
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48-pin
46-pin
48-ball
D-63303
F97010
sa29 pinout
29LV160T
TOP SIDE MARKING m03
29LV160
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY B l I l i i 8 M 1 M x 8/512 K x 16 BIT MBM29 F800 T-90-X-12-X/MBM29 F 800 B-90-X-12-x • FEATURES
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MBM29
T-90-X-12-X/MBM29
B-90-X-12-x
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 8 M 1 M x 8 BIT MBM29F080-12-X • FEATURES • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standards Pinout and software compatible with single-power supply Flash
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MBM29F080-12-X
48-pin
40-pin
44-pin
F40008S-1C-1
44-LE
F44023S-2C-2
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Untitled
Abstract: No abstract text available
Text: M B M29 LV8 OOT-12-x/M B M29 LV800B -12 x FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts
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OOT-12-x/M
LV800B
48-pin
44-pin
46-pin
F9704
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46-PIN 29lv
Abstract: fujtsu
Text: FLASH MEMORY ¡BIMBIllMIBjiBIB IB IlijB lliiB illjB IB IIS lMllliillB H I 8M 1M x 8/512K x 16 BIT MBM29LV800TA-9o-)ü-i 2.x/MBM29LV800BA-»o-xm2.x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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8/512K
MBM29LV800TA-9o
x/MBM29LV800BA-
48-pin
44-pin
46-pin
48-ball
46-PIN 29lv
fujtsu
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Untitled
Abstract: No abstract text available
Text: Order this document by M29S160/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 16M CMOS Flash Memory Organization: 1,048,576 words x 16 bits 2,097,152 words x 8 bits Power Supply Voltage: V c c = 2.7 V - 3.6 V 2.5 V - 3.6 V READ Access Time:
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M29S160/D
M29S160xB-80
M29S160xB-10
M29S160xB-12
Word/16
Word/32
Word/64
-TOUCHTONE1-602-244-6609
M29S160/I
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY B l I l i 2 M 256 K x 8/128 K x 16 BIT M B M 2 9 F 2 0 0 T A - 90- X - 12- x / M B M 2 9 F 2 0 0 B A - 90- x - 12- x
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44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Plead Maximum Access Times — 5V: 60/80/120 ns
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IS28F400BV/BLV
x8/x16
IS28F400BVB-80TI
IS28F400BVT-80TI
48-pin
44-pin
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M29F800A3BT12
Abstract: m29f800a3br 29F800A
Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max
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M29F800A3/D
M29F800A3--
M29F80QA
M29F800A3-12
M29F800A3
M29F800A2
48-Pin
M29F800A3U
M29F800A3B
M29F800A3BT12
m29f800a3br
29F800A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs p r e l im in a r y n o t a fin a i s ^ J ^ M5M29FB/T160A VP,RV-80,-10,-81 nc h a n g e . 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1 ,048,576-WORD BY16-BIT S o m e p a r a m e t r i c lim itó a r e CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T160A
RV-80
216-BIT
152-WORD
576-WORD
BY16-BIT)
29FB/T160AVP
216-bit
Mar/98
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MBM29F800
Abstract: No abstract text available
Text: MBM29F800T-90-X/-12-X/MBM29F800B-90-X/-12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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M29F800T-90-X/-12-X/MBM29F800B-90-X/-12-X
44-pin
48-pin
F9703
MBM29F800
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Untitled
Abstract: No abstract text available
Text: M B M29 LV400T-12-x/M B M29 LV400B-12-x FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard com m ands Uses same software commands as E2PROMs • Compatible with JEDEC-standard w orld-w ide pinouts
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LV400T-12-x/M
LV400B-12-x
48-pin
44-pin
46-pin
F9704
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