0828C
Abstract: No abstract text available
Text: öflD D • 88D flS35bQ5 D014S34 □ « S I E G 14534 7~ D . U BUZ 28 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel a 100 V Draln-source voltage l^DS a 18 A Continuous drain current /d Draln-source on-resistance ^DS on =» 0,1 n Description
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flS35bQ5
D014S34
C67078-A1608-A2
1235b05
0828C
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Untitled
Abstract: No abstract text available
Text: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S3132-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 54M . BCP 56M NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 51 M.BCP 53M PNP BHs Q62702-C2607 h BCP 56M o Q62702-C2606 4 n.c.
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Q62702-C2606
Q62702-C2607
Q62702-C2595
SCT-595
flS35bQ5
S35LD5
fiE35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS Dynamic Differential Hall Effect Sensor 1C TLE 4923 Preliminary Bipolar 1C Features • • • • • • • • • • • • • Advanced performance Higher sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption
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fi235b05
fl235bD5
TLE4923
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P-DIP-20-1
Abstract: TDA 4718 B TDA 4716 C equivalent 20/TDA 4716 C siemens pdip 14
Text: bOE II • 8 5 3 S b0 5 0 0 5 0 00 1 110 « S I E 6 SIEMENS SIEMENS AKTIENCESELLSCHAF T - f c S Current-Monitoring IC - lS t i _E 4951 Preliminary Data Bipolar 1C Features • • • • • • Input currents max 25 nA, protective resistors can be connected in series
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P-DIP-14-1
P-DIP-20-1
TDA 4718 B
TDA 4716 C equivalent
20/TDA 4716 C
siemens pdip 14
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b0615
Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase
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--25C
BD618,
Q62702-D946
Q62702-D948
Q62702-D950
Q62702-D952
Q62702-D954
611/BD
613/BD
S250C
b0615
b0613
bo 615
8 HJC
bd 426
BD 615 transistors
q62702
BD PNP
siemens 611
b0617
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 24 • N channel • Enhancement mode • Avalanche-rated Type Vos h ^DS on Package 1> Ordering Code BUZ 24 100 V 32 A 0.06 Í2 TO-204 AE C67078-S1003-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, Tc = 27 °C
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O-204
C67078-S1003-A2
fi23SbOS
00b7fl0b
23SbGS
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bch limit switch ll1
Abstract: SDA9064 EP-613 power supply sda 20160 EP-603 power supply ep 613 27mhz remote control transmitter and receiver ci VL-609 EP-613 DC POWER SUPPLY sda20160
Text: bSE D • ÖSBSbQS DQ53EÖ4 HTb WÊSIZG SIEMENS SIEMENS AKTIENGESELLSCHAF Digital Deflection Controller SDA 9064 Preliminary Data NMOS IC Features • Pipeline processor structure controls deflection stages • Raster alignment by keyboard or automatically
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DQ53E
100-/120-Hz
Q67100-H8382
P-DIP-40
fl23SbOS
0G5332Ö
235bQ5
bch limit switch ll1
SDA9064
EP-613 power supply
sda 20160
EP-603 power supply
ep 613
27mhz remote control transmitter and receiver ci
VL-609
EP-613 DC POWER SUPPLY
sda20160
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B45265-A8406
Abstract: No abstract text available
Text: Axial-Lead Capacitors with Liquid Electrolyte B 45 265 Construction - LM • Tantalum capacitors with liquid electrolyte, polar • Tubular metal case, elastomer-sealed • Insulating sleeve • Axial leads copper or nickel, tinned Features • Extremely low leakage current
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B45265-A175-
B45265-A365-
B45265-A905-
B45265-A146-
B45265-A256-
B45265-B566-
B45265-A8406
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1321
BFG194
OT-223
23SbDS
012177b
Q1E1777
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Siemens xl 532
Abstract: KCB02 SAB 529 83C166W-5M Siemens mt4 siemens multi channel timer 80C166W-MT3 Compare CISC and RISC gpr 163 80C166
Text: SIEMENS C16x-Family of SAB 80C166W/83C166W High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166W / 83C166W • • • • • • • • • • • • • • • • • • • • • • • • • • • • 16-Bit Microcontroller
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C16x-Family
80C166W/83C166W
16-Bit
80C166W
83C166W
235LD5
Siemens xl 532
KCB02
SAB 529
83C166W-5M
Siemens mt4
siemens multi channel timer
80C166W-MT3
Compare CISC and RISC
gpr 163
80C166
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siemens microcontroller
Abstract: SMD L31 smd transistor A1j smd transistor A1J 3 pins CAPACITOR L31 Lxx 05 smd TLE4729 TRANSISTOR SMD MARKING CODE 7A 235L AED02200
Text: S IE M E N S 2 -P h a s e S te p p e r-M o to r D riv e r TLE 4729 G Overview Bipolar-IC Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Very low current consumption in inhibit mode • Fast free-wheeling diodes
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P-DSO-24-3
023SbOS
01G3L72
E35b05
DlD3b73
siemens microcontroller
SMD L31
smd transistor A1j
smd transistor A1J 3 pins
CAPACITOR L31
Lxx 05 smd
TLE4729
TRANSISTOR SMD MARKING CODE 7A
235L
AED02200
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAS 40. • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing € Available with C E C C quality assessm ent ESD : Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-D339
OT-23
CHA07002
Q62702-D980
Q62702-D979
Q62702-D978
EHAQ7004
EHA07006
0S35bOS
0120SÃ
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