Untitled
Abstract: No abstract text available
Text: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V
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fl23b320
GG171Q3
Q62702-S510
00A/JUS
00A//JS
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2907A
Abstract: No abstract text available
Text: 3SE m D fl23b320 00171ÔÔ h * SIP PNP Silicon Switching Transistors PZT 2907;PZT 2907A SIEMENS/ S P C L i SEMICONDS _ -1— 3*7- 1*7 Type Marking Ordering code 12-mm tape Package* PZT 2907 ZT 2907 Q62702- Z2028 SOT-223 PZT 2907A ZT 2907A Q62702• Z2025
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fl23b320
12-mm
Q62702-
Z2028
OT-223
Q62702â
Z2025
150Hz
200ns
2907A
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Untitled
Abstract: No abstract text available
Text: r-Q i-Q * Silicon Low Leakage Diode 35E D • fl23b320 0DlbS22 T « S I P ' BAS116 _ SIEMENS/ SPCL-. SEMICONDS • Low Leakage applications • Medium speed switching times • Single diode C Type M arking O rdering co de 8-m m tape P a cka ge BAS116
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fl23b320
0DlbS22
BAS116
Q62702-A919
23b320
T-01-09
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Untitled
Abstract: No abstract text available
Text: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S
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fl23b320
Q62702-F964
Q62702-F1021
23b320
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Untitled
Abstract: No abstract text available
Text: 32E D • fl23b320 0017Eflfi T « S I P PNP Silicon Transistor SMBT A 70 SIEMENS/ SPCL-, SEMICONDS ' *7_ • For AF input stages and driver applications • High current gain • Low coilector-emitter saturation voltage B Type Marking Ordering code for
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fl23b320
0017Eflfi
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Untitled
Abstract: No abstract text available
Text: 35E D • fl23b320 0QlbSfi3 ? H S I P Silicon Dual Tuning Diode BB 814 _ SIEMENS/ SPCLi SEMICONDS T-Ol-tf Prelim inary data • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common
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fl23b320
T-07-19
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Untitled
Abstract: No abstract text available
Text: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation
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fl23b320
Q67002-S652
23b320
T-39-05
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Untitled
Abstract: No abstract text available
Text: 32E D • fl23b320 GG1721S 5 H SIP PNP Silicon High-Voltage Transistors PZTA 92; PZTA 93 SIEMENS/ SP CLi SEMICONDS _ T - 3 3 -* 7 Type Marking Ordering code 12-mm tape Package* PZTA 92 PZTA 92 Q62702-Z2037 SOT-223 PZTA 93 PZTA 93 Q62702-Z2038
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fl23b320
GG1721S
12-mm
Q62702-Z2037
OT-223
Q62702-Z2038
300ps;
023b32D
QD17S1Ã
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marking s73
Abstract: No abstract text available
Text: BSE D • Û23b320 G01bS72 S « S I P T - o V - I o! Silicon Tuning Diode B B 515 SIEMENS/ SPCL-, SEMICONDS Cathode • For UHF and VHF TV/VTR tuners Type BB515 Ordering code Q62702-B398 Marking white/S Maximum ratings Reverse voltage Forward current 30 20
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23b320
G01bS72
BB515
Q62702-B398
fl23b320
T-07-19
marking s73
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RTM 866 - 485
Abstract: No abstract text available
Text: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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023ti32Q
BFP93A
62702-F
OT-143
RTM 866 - 485
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Untitled
Abstract: No abstract text available
Text: f w > ' $ - O c! Silicon Switching Diode Array _ 32E D • B A S 28 Ô23b320 GQlbSDb G « S I P SIEMENS/ SPCLi SEMICONDS • For high-speed switching • Electrically Isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape
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23b320
Q62702-A163
Q62702-A77
T-03-09
23b320
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Untitled
Abstract: No abstract text available
Text: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.
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823b32Q
62702-F1049
OT-23
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Untitled
Abstract: No abstract text available
Text: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type
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fl23b32Q
GG1722S
SMBT2907
Q68000-A4336
Q68000-A4337
Q68000-A6501
Q68000-A6474
1/CE-20V
23b32Q
A23b32G
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lge 673
Abstract: TRANSISTOR cq 802
Text: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!
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053b3E0
017Q3C
62702-F1218
OT-23
01-1-1-7O
lge 673
TRANSISTOR cq 802
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BF993 siemens
Abstract: No abstract text available
Text: T Silicon N Channel MOSFET Tetrode 3 SE D • fl2 3 fc» 3 2 0 - Q Q l b 7 tì S 2 / - ¿ S ' BF 993 Q H S IP SIEMENS/ SPCLi SEMICONDS • • High gain, low distortion For VHF TV and FM mixer and Input stages Type Marking Ordering code for versions In bulk
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62702-F899
62702-F1018
200MHZ
100MHz
BF993 siemens
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Untitled
Abstract: No abstract text available
Text: BSE D • Ö23b32ü OOlbbOS 2 H S I P Silicon Switching Diode Array _ S IE M E N S / S P C Li SMBD 6100 S E M IC O N D S _ 1 2 ^ 2 ^ 2 3 • For high-speed sw itching applications • Comm on cathode Type M a rk in g O rd e rin g c o d e fo r
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23b32Ã
23L32Q
SMBD6100
T-03-09
fl23b320
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BFR92P
Abstract: No abstract text available
Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.
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0G17GQ2
BFR92P
OT-23
BFR92P
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Untitled
Abstract: No abstract text available
Text: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage
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023b32G
12-mm
Q62702-
F1304
OT-223
F1305
8FN39
fl23ti32Q
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35Z diode
Abstract: No abstract text available
Text: 32E D • ISIP Ô23ta320 0Q17143 b BSS87 SIPMOS N Channel MOSFET f SIEMENS/ SPCL-, SEMICONDS - s s - • SIPMOS - enhancement mode • Drain-source voltage Vis = 240V • Continuous drain current I o = 0.29A • Drain-source on-resistance • Total power dissipation
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23ta320
0Q17143
BSS87
Q62702-S506
S53ti350
35-Z5
35Z diode
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Untitled
Abstract: No abstract text available
Text: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708
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Q62702-A242
Q62702-A707
Q62702-A708
Q62702-A95
Q62702-A113
Q62702-A79
3AS19
fl23b320
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for
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023b3S0
001731e
T-35-11
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Untitled
Abstract: No abstract text available
Text: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!
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023b3SG
62702-F1
OT-143
-J250
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