TRANSISTOR mcr 100-8
Abstract: No abstract text available
Text: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault
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MC33389
MC33389
100mA
200mA
125kBaud
MC33388
TRANSISTOR mcr 100-8
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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K4R271669E
Abstract: No abstract text available
Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R271669E
128Mbit
K4R271669E
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HFBR-2522
Abstract: No abstract text available
Text: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated
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5964-40027E
AV02-0730EN
HFBR-2522
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IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
-40oC
64Mx16
IS43LR16640A-5BLI
IS43LR16640A-6BLI
60-ball
IS43LR16640A
IS46LR16640A-5BLA1
IS43LR16640A-6BL
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MP-25
Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP88N055CLE,
NP88N055DLE,
NP88N055ELE
NP88N055CLE
O-262
O-220AB
NP88N055DLE
O-263
O-220AB)
MP-25
NP88N055CLE
NP88N055DLE
NP88N055ELE
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ELITE FLASH STORAGE TECHNOLOGY INC
Abstract: BPL TV soic-8 200mil
Text: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over
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512Kx8)
F25L004A
33MHz
50MHz;
75MHz;
100MHz
ELITE FLASH STORAGE TECHNOLOGY INC
BPL TV
soic-8 200mil
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Untitled
Abstract: No abstract text available
Text: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory FEATURES - Block erase time 1sec (typical) - Sector erase time 90ms(typical) y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz
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512Kx8)
F25L004A
33MHz
50MHz;
75MHz;
100MHz
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TQFN-32
Abstract: fp6793 DSASW0017863 32-pin MO-220 5x5 Thin-film magnetic resistance Use High-Voltage Op Amps to Drive Power MOSFETs Linear Technology Voltage Regulator Transconductance current source
Text: fitipower integrated technology lnc. Preliminary FP6793 TFT-LCD DC-DC Converters with Operational Amplifiers Description Features The FP6793 includes a high performance step-up regulator, two linear regulator controllers, and high current operational amplifiers for active-matrix, thin
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FP6793
FP6793
FP6793-Preliminary
MO-220-J
TQFN-32
DSASW0017863
32-pin MO-220 5x5
Thin-film magnetic resistance
Use High-Voltage Op Amps to Drive Power MOSFETs
Linear Technology Voltage Regulator Transconductance current source
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LCMXO2-1200HC-4TG100C
Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
Text: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1
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HB1010
LCMXO2-1200HC-4TG100C
LCMXO2-256HC-4TG100I
LCMXO2-1200
tn1200
lcmxo2
LCMXO2-1200HC-4TG100
LCMXO2-2000
LCMXO2-7000
MachXO2-1200
LCMXO2-4000HC
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d1409
Abstract: NP40N055CHE NP40N055KHE MP-25 NP40N055DHE NP40N055EHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055CHE,NP40N055DHE,NP40N055EHE,NP40N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP40N055CHE
NP40N055DHE
NP40N055EHE
NP40N055KHE
O-262
NP40N055EHE
O-220AB
NP40N055DHE
NP40N055CHE
O-263
d1409
NP40N055KHE
MP-25
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NP34N055SLE
Abstract: NP34N055HLE NP34N055ILE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HLE, NP34N055ILE, NP34N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Tran- PART NUMBER sistors designed for high current switching applications.
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NP34N055HLE,
NP34N055ILE,
NP34N055SLE
NP34N055HLE
NP34N055ILE
O-251
O-252
O-251)
NP34N055SLE
NP34N055HLE
NP34N055ILE
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NP32N055HDE
Abstract: NP32N055IDE NP32N055SDE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.
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NP32N055HDE,
NP32N055IDE,
NP32N055SDE
NP32N055HDE
NP32N055IDE
O-251
O-252
O-251)
NP32N055HDE
NP32N055IDE
NP32N055SDE
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD60247 IRS2136D/ IRS21362D/ IRS21363D/ RS21365D/ IRS21366D/ IRS21367D/ IRS21368D J&S PbF 3-PHASE BRIDGE DRIVER Packages Features • • • • • • • • • • • • • • Floating channel designed for bootstrap operation. Fully
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PD60247
IRS2136D/
IRS21362D/
IRS21363D/
RS21365D/
IRS21366D/
IRS21367D/
IRS21368D
IRS2136D/
IRS21368D)
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46LR32640A
Abstract: Mobile DDR SDRAM
Text: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR32640A
32Bits
IS43/46LR32640A
32-bit
IS43LR32640A-6BLI
90-ball
-40oC
64Mx32
IS46LR32640A-5BLA1
46LR32640A
Mobile DDR SDRAM
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IRS2308
Abstract: IR2308 IRFBC20 IRFBC30 IRFBC40 IRFPE50 IRS2308S
Text: PRELIMINARY Data Sheet No.PD60266 revA IRS2308 S PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt Packages immune • Gate drive supply range from 10 V to 20 V
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PD60266
IRS2308
IRS2308
IRS2308PbF
IRS2308SPbF
IRS2308STRPbF
IR2308
IRFBC20
IRFBC30
IRFBC40
IRFPE50
IRS2308S
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REG IC 48V IN 12V 10A OUT ic
Abstract: smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144 ISL6144IRZA ISL6144IVZA
Text: ISL6144 Data Sheet January 6, 2011 FN9131.6 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
FN9131
ISL6144
REG IC 48V IN 12V 10A OUT ic
smps Power Supply Schematic Diagram
40A Adjustable Power Supply Schematic Diagram
48V SMPS
DRIVERS high-speed power MOSFET
smps 10w 12V
smps 10w 5V
ISL6144IRZA
ISL6144IVZA
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Untitled
Abstract: No abstract text available
Text: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays
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IDT82V2082
772KHz
TBR12/13
82V2082
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fn612
Abstract: AN557 ISL8484 ISL8484IR ISL8484IRZ ISL8484IU MAX4684 MAX4685 TB363
Text: ISL8484 Data Sheet May 12, 2008 Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Dual SPDT Analog Switch The Intersil ISL8484 device is a low ON-resistance, low voltage, bidirectional, dual single-pole/double-throw SPDT analog switch designed to operate from a single +1.65V to
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ISL8484
ISL8484
FN6128
fn612
AN557
ISL8484IR
ISL8484IRZ
ISL8484IU
MAX4684
MAX4685
TB363
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samsung u6 data cable
Abstract: EPROM 27512 samsung u2 cable ARM ks32c6100 KS32C6100 29ee512 9pin rs232 SIMM FLASH MEMORY MODULE 72pin 16bit samsung u2 & u6 cable 0x1400000
Text: KS32C6100 RISC MICROCONTROLLER 17 EVALUATION BOARD EVALUATION BOARD INTRODUCTION KS32C6100 evaluation board is a platform that is suitable for code development and exploration of KS32C6100. It supports various memory devices such as DRAM Normal/EDO , SRAM, EPROM, and Flash. Using the
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KS32C6100
KS32C6100.
KS32C6100
25-pin)
16-bit.
32-bit.
samsung u6 data cable
EPROM 27512
samsung u2 cable
ARM ks32c6100
29ee512
9pin rs232
SIMM FLASH MEMORY MODULE 72pin 16bit
samsung u2 & u6 cable
0x1400000
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TSC 7106 cpl
Abstract: TSC7660 TSC7106 tsc 7106 tsc 7107 cpl ic 7106 cpl 7107A tsc7107 TSC7106A Tsc7107A
Text: 3bE D TELEDYNE COMPONENTS ÖS17bü2 G0Ü7ÜMM b « T S C -T 5 M O -O S WTELEDYNE COMPONENTS TC7106/7106A TC7107/7107A 3-1/2 DIGIT A/D CONVERTER FEATURES True Polarity Indication for Precision Null Applications Convenient 9 V Battery Operation TC7106A High Impedance CMOS Differential Inputs .1012il
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TC7106/7106A
TC7107/7107A
TC7106)
TC7107)
TC7106A)
1012il
60-Pin
flT17bOE
TSC 7106 cpl
TSC7660
TSC7106
tsc 7106
tsc 7107 cpl
ic 7106 cpl
7107A
tsc7107
TSC7106A
Tsc7107A
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QRT-38-40
Abstract: COUNTER LED bcd TC831
Text: le lu o m Semiconductor, Inc. TC831 3-3/4 DIGIT A/D CONVERTER WITH AUTO-RANGING FREQUENCY COUNTER FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3 -3/4 Digit, M ultiple-F un ctio n M easu rem en t System — A n alo g-to-D igital C o nverter — Frequency C o un ter
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TC831
1N4148
CX-1V-40
QRT-38-40
TC831
COUNTER LED bcd
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,
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TC59R7218XB
72-Mbit
600MHz
800MHz
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