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    FIG12 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.:886-2-28094742


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    PDF FS6611-DS-11 FS6611 FS6611

    Untitled

    Abstract: No abstract text available
    Text: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1


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    PDF LC5830K LC5830K

    SON2017-6

    Abstract: TK64629AM5 MARK E31 SOT23-5
    Text: APPLICATION MANUAL High RR, Fast Response, Low Noise 200mA CMOS LDO Regulator IC With Sleep Mode TK646xxAM5/S2 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS


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    PDF 200mA TK646xxAM5/S2 GC3-N012 TK646xxAM5/S2 SON2017-6 TK64629AM5 MARK E31 SOT23-5

    TK10203AM9

    Abstract: No abstract text available
    Text: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


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    PDF TK10203AM9 GC3-L017A TK10203AM9/1 HSON3030C-10 600mW* CM105B105K16K 200mA TK10203AM9

    CM105B104K25A

    Abstract: CT21X5R105K25A TK10202AM9 AP-478
    Text: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


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    PDF TK10202AM9 GC3-L008A HSON3030C-8 200mA) 600mW* 1k200mA 8k150mA CM105B104K25A CT21X5R105K25A TK10202AM9 AP-478

    marking n35

    Abstract: Toko 10mm SON2017-6 GC3-M021A TK68115AMF MARKING CODE B25 SOT23-5
    Text: APPLICATION MANUAL Capacitor-less, Ultra Small Package, Low IQ 200mA CMOS LDO Regulator IC TK681xxAMF/M5/S2 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS


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    PDF 200mA TK681xxAMF/M5/S2 GC3-M021A SON2017-6 TK681xxAMF/M5/S2 marking n35 Toko 10mm SON2017-6 GC3-M021A TK68115AMF MARKING CODE B25 SOT23-5

    MUN2216

    Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
    Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)


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    PDF MUN2211 SC-59 23-Jan-09 FIG32. FIG33. FIG34. SC-59 MUN2216 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c

    TK63133

    Abstract: TK63115B marking code C33 CM05B TK63118B TK63128B TK63130B TK631xxB TOKO 10K SON2017-6
    Text: APPLICATION MANUAL CMOS LDO Regulator IC TK631xxB/H/S CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT 10 . TYPICAL CHARACTERISTICS


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    PDF TK631xxB/H/S GC3-J025E SON2017-6 TK631xxH) TK631xxB/H/S SON2017-6, OT235. TK63133 TK63115B marking code C33 CM05B TK63118B TK63128B TK63130B TK631xxB TOKO 10K SON2017-6

    KHB7D5N60F1

    Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
    Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


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    PDF KHB7D5N60P1/F1/F2 KHB7D0N60P1 Fig15. Fig16. Fig17. KHB7D5N60F1 KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V

    KHB5D0N50F

    Abstract: KHB5D0N50P KHB5D0N50F2
    Text: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB5D0N50P/F/F2 KHB5D0N50P Fig15. Fig16. Fig17. KHB5D0N50F KHB5D0N50P KHB5D0N50F2

    KHB019N20F1

    Abstract: KHB019N20F2 KHB019N20P1
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


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    PDF KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. KHB019N20F1 KHB019N20F2 KHB019N20P1

    Untitled

    Abstract: No abstract text available
    Text: PD - 97043B IRF6648 DirectFET™ Power MOSFET ‚ RoHs Compliant Containing No Lead and Bromide  l Low Profile <0.7 mm l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Optimized for Synchronous Rectification for 5V


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    PDF 97043B IRF6648

    FS-1133

    Abstract: No abstract text available
    Text: PCS3P73Z01BW Wide Frequency range TimingSafe Peak EMI reduction IC General Features 1x , LVCMOS Timing-Safe™ Peak EMI Reduction Input frequency: 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V Output frequency Timing-Safe™ : 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V


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    PDF PCS3P73Z01BW 12MHz 150MHz 15MHz 175MHz FS-1133

    td1513

    Abstract: No abstract text available
    Text: Techcode DATASHEET 2A 380KHz 20V PWM Buck DC/DC Converter General Description TD1513 Features The TD1513 is a 380 KHz fixed frequency monolithic z 2A Constant Output Current step down switch mode regulator with a built in internal z 140mΩ RDSON Internal Power PMOSFET Switch


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    PDF 380KHz TD1513 TD1513

    KMB2D0N60SA

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.


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    PDF KMB2D0N60SA Fig10. Fig11. Fig12. KMB2D0N60SA

    kf12n60

    Abstract: kf12n60f kf12n60 equivalent KF12N60P *2n60P
    Text: SEMICONDUCTOR KF12N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


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    PDF KF12N60P/F KF12N60P KF12N60F Fig15. Fig16. Fig17. kf12n60 kf12n60f kf12n60 equivalent KF12N60P *2n60P

    047N08P

    Abstract: 047N08
    Text: SEMICONDUCTOR KU047N08P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


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    PDF KU047N08P Fig14. Fig15. Fig16. 047N08P 047N08

    BYW100-100

    Abstract: CFL lamp 100NF 630V L6569 L6569A L6569AD L6569D irf 146 diode 1N4006 specifications PTC 15 T 630V
    Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA


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    PDF L6569 L6569A 270mA 170mA L6569D L6569AD BYW100-100 CFL lamp 100NF 630V L6569 L6569A L6569AD L6569D irf 146 diode 1N4006 specifications PTC 15 T 630V

    KHB8D8N25F

    Abstract: 352AL D 92 M - 02 DIODE KHB8D8N25F2 KHB8D8N25P
    Text: SEMICONDUCTOR KHB8D8N25P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB8D8N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters


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    PDF KHB8D8N25P/F/F2 KHB8D8N25P Fig15. Fig16. Fig17. KHB8D8N25F 352AL D 92 M - 02 DIODE KHB8D8N25F2 KHB8D8N25P

    KHB7D0N65F1

    Abstract: RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


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    PDF KHB7D0N65P1/F1/F2 KHB7D0N65P1 Fig15. Fig16. Fig17. KHB7D0N65F1 RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1

    khb*2D0N60P

    Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
    Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


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    PDF KHB2D0N60P/F/F2 KHB2D0N60P Fig15. Fig16. Fig17. khb*2D0N60P KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent

    on line ups circuit diagrams

    Abstract: M30260F8AGP c21214
    Text: THE NEW VALUE FRONTIER No. C0502-05002-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units


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    PDF C0502-05002-001 Fig26 on line ups circuit diagrams M30260F8AGP c21214

    CI 3060 elsys

    Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
    Text: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.


    OCR Scan
    PDF KS0090 26COM/64SEG KS0090/90-I KS0090I KS0090I CI 3060 elsys rs 3060 cj KS* I2C driver LCD driver KS SEG60

    IR 717p

    Abstract: 1274 LTL-1294A LTL1274A
    Text: t . jLITE-ON INC 31E J> 1 Æ m ¡r : * E T v.V . i : [ ' D P ä L T L -1 2 04 A /71 7 R L T L -1 214 A /717P L T L -1 2 24 A /71 7 H R L T L-1234A /717G M SS3b3fci7 00G507Ô 5 L 1 Ö T ILTNr IN D IC A T O R S RED ‘ ' " L T L -1 254A /7 1 7 Y Y E LLO W


    OCR Scan
    PDF 553b3fci7 LTL-1204A/717R LTL-1214A/717P LTL-1224A/717HR LTL-1234A/717G LTL-1254A/717Y LTL-1274A/717A LTL-1294A 234A/ IR 717p 1274 LTL1274A