Untitled
Abstract: No abstract text available
Text: A12FA 660V Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Gerätesicherung, 6.3 x 32 mm, Superflink FF, 660 VAC UL 248-14 • 660 VAC · Superflink FF Beschreibung Anwendungen - Hohes Ausschaltvermögen Standards - Halbleiterschutz - Messgeräte
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A12FA
com/pg01
E132506
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Untitled
Abstract: No abstract text available
Text: A12FA 500V Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Gerätesicherung, 6.3 x 32 mm, Superflink FF, 500 VAC UL 248-14 • 500 VAC · Superflink FF Beschreibung Anwendungen Standards Referenzen Zulassungen Weblinks - Hohes Ausschaltvermögen
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A12FA
com/pg01
E132506
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Untitled
Abstract: No abstract text available
Text: A12FA 380V Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Gerätesicherung, 6.3 x 32 mm, Superflink FF, 380 VAC UL 248-14 • 380 VAC · Superflink FF Beschreibung Anwendungen Standards Referenzen Zulassungen Weblinks - Hohes Ausschaltvermögen
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A12FA
com/pg01
E132506
Lag35
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Untitled
Abstract: No abstract text available
Text: SA 5x20 Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Gerätesicherung, 5 x 20 mm, Superflink FF, 250 VAC 250 VAC • Superflink FF Beschreibung Referenzen - Hohes Ausschaltvermögen - Keramikrohr Allgemeine Produktinformationen Weblinks Zulassungen, RoHS, CHINA-RoHS, e-Store, Distributor-Stock-Check,
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com/pg01
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superflink
Abstract: No abstract text available
Text: FUSES / SICHERUNGEN NON RESETTABLE / NICHT RÜCKSTELLEND NEW Sub-miniature fuse for surface mounting Type MGA Kleinst-Sicherung für Oberflächenmontage Typ MGA super-quick-acting FF superflink FF NEU Typical Time to Trip at 23˚C/ Typische Auslösezeiten bei 23˚C
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KF412
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values
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IC1500
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 7 28 2,5 deep C2 16 40 53 E1 G2 18 44 2,5 deep 57 C2 C2 E1 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values
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FF 150 R 1200 kf igbt
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values
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IGBT FF 300
Abstract: eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ
Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF
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D0DG122
IGBT FF 300
eupec FZ 50 A 12 KF
FZ 75
eupec FZ 800 R 16
fz 69
eupec FS 25 R 12 KL
eupec igbt 400 A
FZ200
Eupec fz 1200 r 12
50/R005 FZ
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eupec FZ 50 A 12 KF
Abstract: IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL
Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF
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D0DG122
eupec FZ 50 A 12 KF
IGBT FF 300
fz 69
FZ 300 R 06 KL
kl 50
eupec FZ 800 R 16
Eupec fz 1200 r 12
FZ15A10KN
FF 75 R 1200 kl igbt
eupec FS 25 R 12 KL
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FS150R12KF4
Abstract: IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51
Text: IGBT High-Power Module Type Range status o f sam ple availability 4 □ production • prototype. + ENG sam ples. BMOaai? 00Q25G4 fill # 1 . Q '9 8 O 2. Q '98 IGBT High Power Modules T ype Dual modules FF200R 33KF1 FF 400 R 12 KF4 FF 400 R 16 KF4 FF 400 R 1 7 K F 4
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140x73mm
140x130
140x190
3M03HT
00G2S07
FS150R12KF4
IGBT module FZ 1200
FF 400 R 14
FS200R12KF4
400R12K
DIODE e2l
IGBT module FZ 1200 R17kf4
igbt F4 400 R 12 KF4
IGBT FZ 800R12kF4
FZ 51
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Untitled
Abstract: No abstract text available
Text: IBM13M16734BCC 16M x 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: 1n \ L _ , -2 6 0 ,-3 6 0 ! \ j. PCJ0° .! Units! i R e g . ! B u ff. • R e g . ; B u ff. ;
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IBM13M16734BCC
168-Pin
16Mx72
66/100MHz
PC100
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Untitled
Abstract: No abstract text available
Text: FF 200 R 12 KL Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 200 A RthCK lc Thermal properties DC, pro B austein/p e r module DC, pro Baustein /p e r module pro B austein/p e r module
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LVJ DIODE
Abstract: No abstract text available
Text: FF 600 R 12 KF 1 Transistor Transistor Elektrische Eigenschaften Electrica] properties VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,016 DC, pro Z w e ig /p e r arm 0,032 RthCK pro B austein/p e r module
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31403HR7
LVJ DIODE
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Untitled
Abstract: No abstract text available
Text: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module
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300R12tCF2
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7SR10
Abstract: FF75R10KF2 75r10kf2
Text: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm
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FFT5B12KF2
4035T7
7SR10
FF75R10KF2
75r10kf2
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7SR10
Abstract: No abstract text available
Text: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm
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FFT5B12KF2
34035T7
7SR10
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Untitled
Abstract: No abstract text available
Text: ff HA-5147 H A R R IS SE MI CO ND UC TO R Ultra-Low Noise Precision High Slew Rate Wideband Operational Amplifier March 1993 Features Description • H ig hspeed . 35V/^s The HA-5147 monolithic operational am plifier features an
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HA-5147
HA-5147
120MHz
00V/V
002nV/Div.
HA-5147,
HA-5147A
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FF50R12KF2
Abstract: FF50R12
Text: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module
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FFSOR12COKF3
FF50R12
50R10KF2/B
34032T7
FF50R12KF2
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Untitled
Abstract: No abstract text available
Text: FF 75 R 12 KL T h erm isch e Eigenschaften Transistor T ran sistor R thJC Elektrische Eig ensch aften Electrical properties Höchstzulässige W erte Maximum rated values V ces Ic R thC K 1200 V 75 A Therm al properties DC, pro Baustein / per module DC, pro Baustein / per module
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FF50R12KF2
Abstract: No abstract text available
Text: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module
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FFSOR12COKF3
FF50R12
50R10KF2/B
34032T7
FF50R12KF2
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Untitled
Abstract: No abstract text available
Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W
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3403ES7
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