NE5520379A
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
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NE5500179A
Abstract: ldmos nec
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
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NE5500179A
NE5500179A
ldmos nec
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nec 1678
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5500479A
NE5500479A
nec 1678
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NE5510179A
Abstract: NE5510179A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
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NE5510179A
NE5510179A
NE5510179A-T1
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NE5510279A
Abstract: NE5510279A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5510279A
NE5510279A
NE5510279A-T1
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NE5510379A
Abstract: NE5510379A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5510379A
NE5510379A
NE5510379A-T1
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an power amplifier 108 mhz
Abstract: No abstract text available
Text: Miniline Enhanced VAx-Types Push Pull GaAs FET Amplifiers Application The VAx amplifiers with GaAs FET technology are designed to operate as the last active device in broadband RF networks. . APPLICATIONS • Last active device in an interactive broadband networks
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862MHz
40MHz
an power amplifier 108 mhz
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DCS1800
Abstract: NE5520279A NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
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NE5520279A
NE5520279A
DCS1800
NE5520279A-T1
NE5520279A-T1A
VP215
ldmos nec
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NE552R679A
Abstract: NE552R679A-T1 NE552R679A-T1A VP215 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2
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NE552R679A
NE552R679A
NE552R679A-T1
NE552R679A-T1A
VP215
ldmos nec
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7530D
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
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NE5520279A
NE5520279A
DCS1800
7530D
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PU10123EJ01V1DS
Abstract: R-4775
Text: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
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NE5520279A
NE5520279A
DCS1800
PU10123EJ01V1DS
R-4775
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NE552R479A-T1A
Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our
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NE552R479A
NE552R479A
NE552R479A-T1A
VP215
GSM1900
NE552R479A-T1
ldmos nec
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Nec K 872
Abstract: NE552R679A NE552R679A-T1 NE552R679A-T1A VP215 nec 772 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2
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NE552R679A
NE552R679A
Nec K 872
NE552R679A-T1
NE552R679A-T1A
VP215
nec 772
ldmos nec
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our
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NE552R479A
NE552R479A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2
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NE552R679A
NE552R679A
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2SC2812
Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
Text: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,
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ENN7021
2SK1740
2SC2812
FC21
ITR01960
ITR01961
ITR01963
ITR01964
ITR01965
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Untitled
Abstract: No abstract text available
Text: GaAs Components Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT . . . . . . . . . . . . . . . . .81 15 GHz GaAs-FET Buffered Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85
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1SV70
Abstract: MARKING CODE SMD IC g1 cmpak6 SMD MARKING CODE hitachi HITACHI RF EDITION cmpak6 marking Hitachi DSA0076 TBB1001
Text: TBB1001 Twin Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-986E Z 6th. Edition Dec. 2000 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
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TBB1001
ADE-208-986E
200pF,
TBB1001
1SV70
MARKING CODE SMD IC g1
cmpak6
SMD MARKING CODE hitachi
HITACHI RF EDITION
cmpak6 marking
Hitachi DSA0076
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MARKING CODE SMD IC g1
Abstract: SMD MARKING CODE sg 1SV70 TBB1005 SMD MARKING CODE hitachi DSA003645
Text: TBB1005 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-989F Z Preliminary 7th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
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TBB1005
ADE-208-989F
TBB1005
MARKING CODE SMD IC g1
SMD MARKING CODE sg
1SV70
SMD MARKING CODE hitachi
DSA003645
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SMD MARKING CODE hitachi
Abstract: 1SV70 TBB1004 HITACHI RF EDITION marking code g1s MARKING CODE SMD IC g1 DSA003645 marking code g2s
Text: TBB1004 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-988H Z 9th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
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TBB1004
ADE-208-988H
200pF,
TBB1004
SMD MARKING CODE hitachi
1SV70
HITACHI RF EDITION
marking code g1s
MARKING CODE SMD IC g1
DSA003645
marking code g2s
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FET2
Abstract: SMD MARKING CODE sg 1SV70 TBB1002 SMD MARKING CODE hitachi DSA003645
Text: TBB1002 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-987F Z 7th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
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TBB1002
ADE-208-987F
TBB1002
FET2
SMD MARKING CODE sg
1SV70
SMD MARKING CODE hitachi
DSA003645
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Hitachi DSA0076
Abstract: 1SV70 BB303M
Text: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303M
ADE-208-697B
200pF,
OT-143R
BB303M
Hitachi DSA0076
1SV70
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MRF255 equivalent
Abstract: electrolytic capacitor 470 mrf255
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255
MRF255 equivalent
electrolytic capacitor 470
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MRF255 equivalent
Abstract: mrf255
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255
MRF255 equivalent
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