Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14580 Revision. 2 Product Standards MOS FET FC4B22070L FC4B22070L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 1.67 3 1 2 Features y Low source-source ON resistance:Rss on typ. = 17.5 m Ω（VGS = 4.5 V)
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TT4-EA-14580
FC4B22070L
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14847 Revision. 1 Product Standards MOS FET FC6B22220L FC6B22220L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 Features y Low source-source ON resistance:Rss on typ. = 8.2 m Ω（VGS = 4.5 V)
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TT4-EA-14847
FC6B22220L
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14734 Revision. 2 Product Standards MOS FET FC6B22100L FC6B22100L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features Low source-source ON resistance:Rss on typ. = 8.2 m （VGS = 4.5 V)
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TT4-EA-14734
FC6B22100L
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Abstract: No abstract text available
Text: Doc No. TT4-EA-14513 Revision. 1 Product Standards MOS FET FC6B22090L FC6B22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features Low source-source ON resistance:Rss on typ. = 8.5 m （VGS = 4.5 V)
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TT4-EA-14513
FC6B22090L
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Abstract: No abstract text available
Text: Doc No. TT4-EA-14952 Revision. 1 Product Standards MOS FET FC8V36060L FC8V36060L Single N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits For load switching 2.9 0.3 8 7 6 5 1 2 3 4 0.16 Features 2.4 2.8 y Low drain-source ON resistance:RDS on typ. = 70 mΩ（VGS = 4.5 V)
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TT4-EA-14952
FC8V36060L
UL-94
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Untitled
Abstract: No abstract text available
Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP3203
VP3203
DSFP-VP3203
A042709
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VN1509
Abstract: No abstract text available
Text: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN0109
DSFP-VN0109
B071411
VN1509
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN0104
DSFP-VN0104
B071411
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C031411
Abstract: No abstract text available
Text: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN2406
DSFP-VN2406
C031411
C031411
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN0106
DSFP-VN0106
B071411
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Untitled
Abstract: No abstract text available
Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds This low threshold, enhancement-mode (normally-off)
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TN5325
DSFP-TN5325
A052009
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TN1L
Abstract: No abstract text available
Text: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TN0104
DSFP-TN0104
C071411
TN1L
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DN5MW
Abstract: DN3545 DN3545N3-G DN3545N8-G
Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
B051909
DN5MW
DN3545
DN3545N3-G
DN3545N8-G
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP2206
VP2206
DSFP-VP2206
D031411
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability
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TN2106
DSFP-TN2106
B080913
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2406L
Abstract: VN2406 A120109
Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a
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VN2406
DSFP-VN2406
A120109
2406L
VN2406
A120109
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Untitled
Abstract: No abstract text available
Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain
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VN0606
DSFP-VN0606
A042709
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TP0606N3-G
Abstract: No abstract text available
Text: Supertex inc. TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (80pF typ.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TP0606
DSFP-TP0606
B031411
TP0606N3-G
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SiTN
Abstract: No abstract text available
Text: Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 50pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TN0110
DSFP-TN0110
B030411
SiTN
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Untitled
Abstract: No abstract text available
Text: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain
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VN2410
DSFP-VN2410
B120709
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN0106
DSFP-VN0106
B030411
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sivp
Abstract: No abstract text available
Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP3203
DSFP-VP3203
A042709
sivp
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VN10K
Abstract: VN0106N3 VN10KN3-G sivn
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN10K
DSFP-VN10K
B031411
VN10K
VN0106N3
VN10KN3-G
sivn
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siemens fet to92
Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
B052009
siemens fet to92
dn5mw
125OC
DN3545
DN3545N3-G
DN3545N8-G
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