rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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TRANSISTOR tl131
Abstract: tl239
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
TRANSISTOR tl131
tl239
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transistor c237
Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
transistor c237
capacitor 471
c221 capacitor
TRANSISTOR c104
C103 c104
c804
TL227
c221 TRANSISTOR
C11256
B0828
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PTFB210801
Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT
Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz
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PTFB210801FA
PTFB210801FA
H-37265-2
PTFB210801
NFM18PS105R0J3D
TRANSISTOR tl131
tl117
C210
TL127
490-4393-2-ND
tl-101-2
800A150GT
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Untitled
Abstract: No abstract text available
Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz
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PTFB210801FA
PTFB210801FA
H-37265-2
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TL107 linear
Abstract: TRANSISTOR tl131
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
H-34288G-4/2
TL107 linear
TRANSISTOR tl131
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PTFB093608
Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
Text: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960
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PTFB093608SV
PTFB093608SV
H-34275G-6/2
PTFB093608
32c216
c221 TRANSISTOR
TL251
tl250
transistor tl120
ATC100B2R7BW500X
TL143
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Untitled
Abstract: No abstract text available
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
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PTFB093608
Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960
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PTFB093608FV
PTFB093608FV
H-37275-6/2
PTFB093608
tl2272
ptfb09360
TL258
TL103 application note
tl131
TRANSISTOR c104
TL249
TL145
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TL145
Abstract: TL245 transistor c111 C216 TL152
Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960
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PTFB093608FV
PTFB093608FV
H-37275-6/2
TL145
TL245
transistor c111
C216
TL152
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LM780L05ACM-ND
Abstract: PTFB193408SVV1R250XTMA1
Text: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input
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PTFB193408SV
PTFB193408SV
340-watt
H-34275G-6/2
LM780L05ACM-ND
PTFB193408SVV1R250XTMA1
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TL250
Abstract: TL239
Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,
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PTFB093608FV
PTFB093608FV
H-34275G-6/2
TL250
TL239
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Untitled
Abstract: No abstract text available
Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,
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PTFB093608FV
PTFB093608FV
H-34275G-6/2
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK9606-40B N-channel TrenchMOS logic level FET Rev. 02 — 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9606-40B
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Untitled
Abstract: No abstract text available
Text: TO -22 0A B BUK9506-40B N-channel TrenchMOS logic level FET Rev. 02 — 25 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9506-40B
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BUK95
Abstract: BUK9506-40B
Text: TO -22 0A B BUK9506-40B N-channel TrenchMOS logic level FET Rev. 02 — 25 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9506-40B
BUK95
BUK9506-40B
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Untitled
Abstract: No abstract text available
Text: NTLLD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 11 A / Low Side 13 A, Dual N−Channel, WDFN 3 mm x 3 mm http://onsemi.com V(BR)DSS RDS(ON) MAX Q1 Top FET 30 V 17.4 mW @ 10 V Q2 Bottom FET 30 V 13.3 mW @ 10 V Features •
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NTLLD4901NF
NTLLD4901NF/D
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l35 CAPacitor
Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices
Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features
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PTFA261702E
PTFA261702E
170-watt
l35 CAPacitor
1800 ldmos
marking l33
BCP56
LM7805
RO4350
L42 marking transistor
ATC Semiconductor Devices
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marking l33
Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor
Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features
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PTFA261702E
PTFA261702E
170-watt
marking l33
transistor L44
L33 TRANSISTOR
BCP56
LM7805
RO4350
L42 marking transistor
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BUK9506-40B
Abstract: BUK9606-40B A7550
Text: BUK95/9606-40B TrenchMOS logic level FET Rev. 01 — 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK95/9606-40B
BUK9506-40B
O-220AB)
BUK9606-40B
OT404
A7550
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tl117
Abstract: 0805w fet 4712 PTFB193404F
Text: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1930 to 1990 MHz
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PTFB193404F
PTFB193404F
340-watt
H-37275-6/2
tl117
0805w
fet 4712
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PTFB193404F
Abstract: No abstract text available
Text: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990
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PTFB193404F
PTFB193404F
340-watt
H-37275-6/2
P03-A,
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4901 mosfet
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information MTP75N03HDL HD TM O S E-FET High D en sity P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate ¥ This advanced high-cell density HDTMOS E -F E T is designed to withstand high energy in the avalanche and commutation modes.
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2SK264
Abstract: 2SK264 sanyo 3SK264 NG4901
Text: Ordering number:EN4901 3SK264 No.4901 N-Channel MOS Silicon FET VHF Tuner, High-Frequency Amp Applications F eatures •Enhancement type. • Easy AGC Cut off at VG2S = 0V . • Small noise figure. • Excels in cross modulation characteristics. A b solu te M aximum R atings atTa = 25°C
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EN4901
3SK264
100/iA
2SK264
2SK264 sanyo
3SK264
NG4901
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