ph74
Abstract: ph71 ph76 ph77 EM78886 EM78808 EM78862C EM78P808 OSCILLATOR 32.768K resistor
Text: EM78862C 8-Bit Microcontroller Product Specification DOC. VERSION 2.1 ELAN MICROELECTRONICS CORP. July 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo
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EM78862C
ePV6300
ph74
ph71
ph76
ph77
EM78886
EM78808
EM78862C
EM78P808
OSCILLATOR 32.768K resistor
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P3056LD
Abstract: DIODE P3056LD niko P3056LD p3056LD NIKO
Text: P3056LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P3056LD
O-252
P3056LD"
FEB-04-Y02
P3056LD
DIODE P3056LD
niko P3056LD
p3056LD NIKO
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AA SOD323
Abstract: BA592 s21 diode BA892 BA892-02L BA892-02V SC79 SCD80
Text: BA592/BA892. Silicon RF Switching Diode For band switching in TV/VTR tuners and mobile applications Very low forward resistance typ. 0.45 @ 3 mA small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323
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BA592/BA892.
BA592
BA892/-02L
BA892-02V
BA892
BA892-02L
OD323
SCD80
AA SOD323
BA592
s21 diode
BA892
BA892-02L
BA892-02V
SC79
SCD80
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BAR50
Abstract: BAR50-02L BAR50-02V BAR50-03W BAR50-05 SC79
Text: BAR50. Silicon PIN Diodes Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz Especially useful as antenna switch in mobile communication Very low capacitance at zero volt reverse bias
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BAR50.
BAR50-02L
BAR50-02V
BAR50-03W
BAR50-05
BAR50-02L*
BAR50-05*
OD323
BAR50
BAR50-02L
BAR50-02V
BAR50-03W
BAR50-05
SC79
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Untitled
Abstract: No abstract text available
Text: BA592/BA892. Silicon RF Switching Diode For band switching in TV/VTR tuners and mobile applications Very low forward resistance typ. 0.45 @ 3 mA small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323
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BA592/BA892.
BA592
BA892/-02L
BA892-02V
BA892
BA892-02L
OD323
SCD80
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k03h1202
Abstract: P-TO-220-3-34 IKA03N120H2 IKP03N120H2 IN 1612 R DIODE
Text: IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior
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IKA03N120H2
P-TO220-3-31
P-TO220-3-34
IKA03N120H2
140kHz
Feb-04,
k03h1202
P-TO-220-3-34
IKP03N120H2
IN 1612 R DIODE
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BA892
Abstract: diode ba892
Text: BA592/BA892. Silicon RF Switching Diode For band switching in TV/VTR tuners and mobile applications Very low forward resistance typ. 0.45 @ 3 mA small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323
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BA592/BA892.
BA592
BA892/-02L
BA892-02V
BA892
BA892-02L
OD323
SCD80
diode ba892
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443-7
Abstract: jrc 4557 jrc 455 NSVS1107
Text: NSVS1107 Feb-04 JRC SAW FILTER NSVS1107 Application 449.7MHz SAW FILTER Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 50Ω
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NSVS1107
Feb-04
NSVS1107
20dBm
443-7
jrc 4557
jrc 455
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CMOS RS232 Level Converter to 2.8V
Abstract: AT73C212 cmos camera module cmos sound generator ATMEL 436
Text: P OWER M ANAGEMENT AT73C212 POWER MANAGEMENT UNIT P RODUCTS FOR M ID -LEVEL M ULTIMEDIA M ODULES Integrates in a single IC the power management circuitry for camera and sound sections in feature phones Image: Haz'art Studio l l l 5 independent linear voltage
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AT73C212
32-ball
32ball
300mA
32-pin
CMOS RS232 Level Converter to 2.8V
cmos camera module
cmos sound generator
ATMEL 436
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BAR67
Abstract: BAR67-02V SC79
Text: BAR67. Silicon PIN Diode For low loss RF switches and attenuators Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.25 pF Low forward resistance (typ. 1.5 @ 5mA) Low harmonics BAR67-02V 1 2 Type BAR67-02V Package
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BAR67.
BAR67-02V
Feb-04-2003
BAR67
BAR67-02V
SC79
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B824 transistor
Abstract: transistor B824 B824 Q62702-B824
Text: BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53
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Q62702-B824
OT-23
Feb-04-1997
B824 transistor
transistor B824
B824
Q62702-B824
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Untitled
Abstract: No abstract text available
Text: BAR67. Silicon PIN Diode For low loss RF switches and attenuators Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.25 pF Low forward resistance (typ. 1.5 @ 5mA) Low harmonics BAR67-02V 1 2 Type BAR67-02V Package
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BAR67.
BAR67-02V
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Untitled
Abstract: No abstract text available
Text: EM78862C 8-Bit RISC Type Microprocessor Product Specification Doc. Version 1.9 ELAN MICROELECTRONICS CORP. March 2005 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM. Microsoft, MS, MS-DOS, and Windows are registered trademarks of Microsoft Corporation.
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EM78862C
Mar-08-2005
10KOhms
32x16
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Q62702-F1296
Abstract: No abstract text available
Text: BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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900MHz
OT-23
Q62702-F1296
Feb-04-1997
Q62702-F1296
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NSVS1089
Abstract: No abstract text available
Text: NSVS1089 Feb-04 JRC SAW FILTER NSVS1089 Application 428MHz Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Input and Output Impedance Nominal Center Frequency (f0)
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NSVS1089
Feb-04
NSVS1089
428MHz
430MHz
389MHz
20dBm
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jrc 324
Abstract: jrc 3240 JRC 2940 jrc 319 NSVS1054 324 jrc
Text: NSVS1054 Feb-04 JRC SAW FILTER NSVS1054 Application 314MHz SAW FILTER Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 50Ω
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NSVS1054
Feb-04
NSVS1054
314MHz
314MHz
20dBm
jrc 324
jrc 3240
JRC 2940
jrc 319
324 jrc
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80if70
Abstract: No abstract text available
Text: BAR65. Silicon PIN Diode Series diode for mobile communication in low loss transmit-receiver switches Band switch for TV-tuners Very low forward resistance typ. 0.65 @ 5 mA Low capacitance (typ. 0.5 pF @ 0V) Fast switching applications BAR65-02L
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BAR65.
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
BAR65-02L
BAR65-03W
OD323
80if70
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BAR66
Abstract: No abstract text available
Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS nH Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAR66.
BAR66
Feb-04-2003
BAR66
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BAR65-07
Abstract: BAR65 BAR65-02L BAR65-02V BAR65-03W SC79
Text: BAR65. Silicon PIN Diode Series diode for mobile communication in low loss transmit-receiver switches Band switch for TV-tuners Very low forward resistance typ. 0.65 @ 5 mA Low capacitance (typ. 0.5 pF @ 0V) Fast switching applications BAR65-02L
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BAR65.
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
OD323
BAR65-07
BAR65
BAR65-02L
BAR65-02V
BAR65-03W
SC79
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H15T120
Abstract: No abstract text available
Text: IHW15T120 Soft Switching Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications
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IHW15T120
H15T120
Feb-04
H15T120
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HDP-22
Abstract: No abstract text available
Text: 3 4 THIS DRAWING 0 IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP IN COR POR ATE D. FOR PUBLICATION ALL R IG H T S 2 ,19 LOC R ES ER V ED . GP D IS T : r e v is io n 00 DESCRIPTION L TR RELEASED PER EC 0513-0209-03 DATE DWN APVD 02JAN04 LB
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02JAN04
HDP-22â
11JUN97
17-FEB-04
b8420
HDP-22
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3 POSITION TOGGLE SWITCH 6 pin
Abstract: 15PA90-6W 3 POSITION TOGGLE SWITCH 3 pin 2 POSITION TOGGLE SWITCH 6 pin MIL-S-8805 MIL-PRF-8805 MIL-PRF-8805/98 66AT23-7 momentary switch 04 position
Text: MICRO SWITCH FHÉ.ÉPORT ILLINOIS a o f d iv is io n FE O . C AT ALOG LISTING T H IS ASSEMBLY TOGGLE SWITCH U S A h o n e y w e ll . M F G . C O O t S lS S t 66A T 23 SERIES D R A W IN G HONEYW ELL ro oI 3 8 8 ± .0 I0 - . 0 9 0 APPROX PULLOUT TO CHANGE POSITION
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66AT23
090APPROX
3 POSITION TOGGLE SWITCH 6 pin
15PA90-6W
3 POSITION TOGGLE SWITCH 3 pin
2 POSITION TOGGLE SWITCH 6 pin
MIL-S-8805
MIL-PRF-8805
MIL-PRF-8805/98
66AT23-7
momentary switch 04 position
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Untitled
Abstract: No abstract text available
Text: 2 T H I S DRAWING IS U N P U B L IS H E D . C O P Y RI G H T 2 0 R E L E A S E D FOR P U B L I C A T I O N LOC BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R |3 H T S R E S E R V E D . REV I S I ONS D I ST 00 LTR DE SC R I P T I O N DWN
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OB60-OI18-04
28DEC2004
0FEB04
FEB04
IFEB04
3IMAR200Ã
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UB60
Abstract: DELPHI E G S SNAGLESS BOOT
Text: 2 T H I S DRAWING IS U N P U B L IS H E D . C O P Y RI G H T 2 0 R E L E A S E D FOR P U B L I C A T I O N LOC BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R |3 H T S R E S E R V E D . REV I S I ONS D I ST 00 LTR DE SC R I P T I O N DWN
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IMAR200Ã
B60-0066-04
OB6O-OI18-04
28DEC2004
09FEB04
FEB04
IFEB04
UB60
DELPHI E G S
SNAGLESS BOOT
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