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    FDMS86101 Price and Stock

    onsemi FDMS86101DC

    MOSFET N-CH 100V 14.5A DLCOOL56
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    DigiKey FDMS86101DC Cut Tape 7,934 1
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    FDMS86101DC Digi-Reel 7,934 1
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    FDMS86101DC Reel 6,000 3,000
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    FDMS86101DC Reel 22 Weeks 3,000
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    Mouser Electronics FDMS86101DC 20,903
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    Verical FDMS86101DC 180,916 148
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    Arrow Electronics FDMS86101DC 3,000 22 Weeks 3,000
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    FDMS86101DC Cut Strips 308 22 Weeks 1
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    FDMS86101DC 35 1
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    Newark FDMS86101DC Cut Tape 7,130 1
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    FDMS86101DC Reel 3,000
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    Rochester Electronics FDMS86101DC 216,549 1
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    TME FDMS86101DC 1
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    Richardson RFPD FDMS86101DC 3,000
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    Avnet Silica FDMS86101DC 23 Weeks 3,000
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    EBV Elektronik FDMS86101DC 24 Weeks 3,000
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    IBS Electronics FDMS86101DC 499 139
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    onsemi FDMS86101

    MOSFET N-CH 100V 12.4A/60A 8PQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMS86101 Reel 3,000
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    FDMS86101 Digi-Reel 1
    • 1 $2.89
    • 10 $1.875
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    FDMS86101 Cut Tape 1
    • 1 $2.89
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    Avnet Americas FDMS86101 Reel 0 Weeks, 2 Days 705
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    FDMS86101 Ammo Pack 19 Weeks, 5 Days 1
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    FDMS86101 Bulk 17 Weeks, 5 Days 1
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    FDMS86101 Reel 20 Weeks 3,000
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    Mouser Electronics FDMS86101 21,880
    • 1 $2.37
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    Verical FDMS86101 1,110,000 3,000
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    FDMS86101 21,000 316
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    FDMS86101 8,250 250
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    FDMS86101 3,363 7
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    Arrow Electronics FDMS86101 6,000 20 Weeks 3,000
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    FDMS86101 Cut Strips 3,363 20 Weeks 1
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    Newark FDMS86101 Cut Tape 2,349 1
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    FDMS86101 Bulk 442 1
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    FDMS86101 Reel 3,000
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    Future Electronics FDMS86101 Reel 405,000 17 Weeks 3,000
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    FDMS86101 Reel 84,000 17 Weeks 3,000
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    FDMS86101 Reel 3,000 20 Weeks 3,000
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    Onlinecomponents.com FDMS86101 8,342
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    Bristol Electronics FDMS86101 611 3
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    Quest Components FDMS86101 488
    • 1 $3.2
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    Rochester Electronics FDMS86101 21,000 1
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    • 100 $0.9494
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    TME FDMS86101 1
    • 1 $2.01
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    Richardson RFPD FDMS86101 3,000
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    Avnet Asia FDMS86101 20 Weeks 3,000
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    Chip1Stop FDMS86101 Cut Tape 2,555
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    Flip Electronics FDMS86101

    MOSFET N-CH 100V 12.4A/60A 8PQFN
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    DigiKey FDMS86101 Reel 500
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    Flip Electronics FDMS86101E

    MOSFET N-CH 100V 12.4A/60A 8PQFN
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    DigiKey FDMS86101E Reel 400
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    onsemi FDMS86101E

    MOSFET N-CH 100V 12.4A/60A 8PQFN
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    DigiKey FDMS86101E Reel
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    Avnet Americas FDMS86101E Reel 0 Weeks, 2 Days 538
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    Newark FDMS86101E Bulk 3,000
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    FDMS86101 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS86101 Fairchild Semiconductor 100V N-Channel PowerTrench MOSFET; 8-Power 56 (PQFN) Original PDF
    FDMS86101A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 13A POWER56 Original PDF
    FDMS86101DC Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14.5A 8-PQFN Original PDF

    FDMS86101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 49 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 FDMS86101

    PQFN08A

    Abstract: FDMS86101A
    Text: FDMS86101A N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101A PQFN08A FDMS86101A

    4.7UF 100V

    Abstract: No abstract text available
    Text: 6 5 4 3 2 1 REVISION HISTORY ECO REV _ DESCRIPTION APPROVED DATE MEHDI A. 11-12-12 PRODUCTION 1 4 4 C44 4.7µF 100V 1812 C43 4.7µF 100V 1812 R58 2 TG1 1 2 3 OPT. FDMS86104 R39 R60 OPT. 3 2 1 M2-1 FDMS86101 4 M3-1 C68 OPT. C69 OPT. BG1 TG1 R51 2 R40 0.010


    Original
    PDF FDMS86104 FDMS86101 LDO33 LT8705EUHF 4.7UF 100V

    MO-240

    Abstract: FDMS86101
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 FDMS86101 MO-240

    Untitled

    Abstract: No abstract text available
    Text: FDMS86101DC N-Channel Dual CoolTM Power Trench MOSFET 100 V, 60 A, 7.5 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original
    PDF FDMS86101DC

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 FDMS86101

    FDMS86101

    Abstract: fairchild top marking
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 49 A, 8 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 FDMS86101 fairchild top marking

    Untitled

    Abstract: No abstract text available
    Text: FDMS86101DC N-Channel Dual CoolTM Power Trench MOSFET 100 V, 60 A, 7.5 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original
    PDF FDMS86101DC FDMS86101DC

    PQFN08AREV6

    Abstract: FDMS FDMS86101
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 PQFN08AREV6 FDMS FDMS86101

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 FDMS86101

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 FDMS86101

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 FDMS86101

    FDMS86101

    Abstract: No abstract text available
    Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original
    PDF FDMS86101 FDMS86101

    FDMS86101

    Abstract: FDMS
    Text: FDMS86101DC N-Channel Dual CoolTM Power Trench MOSFET 100 V, 60 A, 7.5 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original
    PDF FDMS86101DC FDMS86101 FDMS

    Untitled

    Abstract: No abstract text available
    Text: FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 100 V, 60 A, 7.5 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild


    Original
    PDF FDMS86101DC

    LTC3300

    Abstract: LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice balancing circuit for supercapacitor thermoelectric generator model reports LTM8047 ltc4425 Sanyo supercapacitors
    Text: January 2012 I N T H I S I S S U E integer-N synthesizer with integrated VCO in a 4mm x 5mm package 9 supercapacitor-based power supply ride-through system 15 ultralow-EMI, µModule Volume 21 Number 4 Dual Output DC/DC Controller Combines Digital Power System


    Original
    PDF EN55022 LT1638 LT1970A com/516 LT1970A SW-COC-001530 LTC3300 LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice balancing circuit for supercapacitor thermoelectric generator model reports LTM8047 ltc4425 Sanyo supercapacitors

    K1A 494

    Abstract: No abstract text available
    Text: LTC4278 IEEE 802.3at PD with Synchronous No-Opto Flyback Controller and 12V Aux Support DESCRIPTION FEATURES n n n n n n n n n n n n n 25.5W IEEE 802.3at Compliant Type 2 PD 10V to 57V Auxiliary Power Input Shutdown Pin for Flexible Auxiliary Power Support


    Original
    PDF LTC4278 Pro00V 400mA 300kHz LTC4269-1 LTC4269-2 4278fc K1A 494

    TRANSISTOR BEL 187

    Abstract: "power sourcing equipment"
    Text: LTC4278 IEEE 802.3at PD with Synchronous No-Opto Flyback Controller and 12V Aux Support DESCRIPTION FEATURES n n n n n n n n n n n n n The LTC 4278 is an integrated Powered Device PD controller and switching regulator intended for high power IEEE 802.3at and 802.3af applications. With a wide input


    Original
    PDF LTC4278 750mA LTC4267-1 LTC4267-3 LTC4269-1 LTC4269-2 4278fb TRANSISTOR BEL 187 "power sourcing equipment"

    Untitled

    Abstract: No abstract text available
    Text: LT8705 80V VIN and VOUT Synchronous 4-Switch BuckBoost DC/DC Controller Features Description Single Inductor Allows VIN Above, Below, or Equal to Regulated VOUT n V Range 2.8V Need EXTV IN CC > 6.4V to 80V n V Range: 1.3V to 80V OUT n Quad N-Channel MOSFET Gate Drivers


    Original
    PDF LT8705 100kHz 400kHz 38-Lead QFN-28 LT3758 DFN-10 MSOP-10E LTC3115-1 DFN-16,

    Untitled

    Abstract: No abstract text available
    Text: LT3752/LT3752-1 Active Clamp Synchronous Forward Controllers with Internal Housekeeping Controller Features Description Input Voltage Range: LT3752: 6.5V to 100V, LT3752-1:Limited Only by External Components n Internal Housekeeping DC/DC Controller n Programmable Volt-Second Clamp


    Original
    PDF LT3752/LT3752-1 LT3752: LT3752-1 100kHz 500kHz) 3752/LT3752-1 LTC3722/LTC3722-2 LT3748 MSOP-16 LT3798

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IN751a

    Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current


    Original
    PDF LTC4359 4359f IN751a 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller

    T5476

    Abstract: NEC B1100
    Text: DEMO MANUAL DC1561B LTC4278: PoE+ 802.3at Powered Device Controller and Synchronous Flyback Description Demonstration circuit 1561B is a high power supply, featuring the LTC 4278. This board is a Type 2 (IEEE 802.3at) compliant, high power Power over Ethernet (PoE), Powered


    Original
    PDF DC1561B LTC4278: 1561B DC1561B DC1567. LTC4278 dc1561bf T5476 NEC B1100

    BCS028N06NS

    Abstract: 028N06NS DC1502
    Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a


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    PDF DC1502A LTC4359HDCB 2V/20A LTC4359 dc1502af BCS028N06NS 028N06NS DC1502