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    FDD5N50NZ Price and Stock

    onsemi FDD5N50NZFTM

    MOSFET N-CH 500V 3.7A DPAK
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    Arrow Electronics FDD5N50NZFTM 57,500 1
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    Newark FDD5N50NZFTM Reel 2,500
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    onsemi FDD5N50NZTM

    Trans MOSFET N-CH 500V 4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD5N50NZTM)
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    Avnet Americas FDD5N50NZTM Reel 17 Weeks 2,500
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    Mouser Electronics FDD5N50NZTM 8,418
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    Verical FDD5N50NZTM 5,000 2,500
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    Newark FDD5N50NZTM Cut Tape 390 1
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    FDD5N50NZTM Reel 2,500
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    Onlinecomponents.com FDD5N50NZTM
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    Richardson RFPD FDD5N50NZTM 2,500
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    Wuhan P&S FDD5N50NZTM 1,200 1
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    Fairchild Semiconductor Corporation FDD5N50NZTM

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    Bristol Electronics FDD5N50NZTM 1,701
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    Quest Components FDD5N50NZTM 1,360
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    ComSIT USA FDD5N50NZTM 2,500
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    Others FDD5N50NZFTM

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    ComSIT USA FDD5N50NZFTM 7,500
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    Chip 1 Exchange FDD5N50NZFTM 5,291
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    Others FDD5N50NZTM

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    Chip 1 Exchange FDD5N50NZTM 4,589
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    FDD5N50NZ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD5N50NZFTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V DPAK Original PDF
    FDD5N50NZTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V DPAK Original PDF

    FDD5N50NZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Mosfet application note fairchild

    Abstract: No abstract text available
    Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5  Features Description • RDS on = 1.38  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original     		FDD5N50NZ FDD5N50NZ Mosfet application note fairchild PDF

    mosfet 500v 4A

    Abstract: Mosfet application note fairchild FDD5N50NZTM
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD5N50NZ FDD5N50NZ mosfet 500v 4A Mosfet application note fairchild FDD5N50NZTM PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD5N50NZF N-Channel UniFETTM FRFET MOSFET 500 V, 3.7 A, 1.75 Ω Features Description • RDS on = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		FDD5N50NZF 100nsec PDF

    ultra fast recovery diode

    Abstract: No abstract text available
    Text: FDD5N50NZF N-Channel UniFETTM FRFET MOSFET 500 V, 3.7 A, 1.75  Features Description • RDS on = 1.47  (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and


    Original     		FDD5N50NZF FDD5N50NZF ultra fast recovery diode PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD5N50NZ PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A • Low Gate Charge ( Typ. 9nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDD5N50NZF PDF

    FDD5N50NZTM

    Abstract: FDD5N50NZ
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5Ω Features Description • RDS on = 1.38Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD5N50NZ FDD5N50NZTM FDD5N50NZ PDF

    fdd5n50nzftm

    Abstract: FDD5N50NZF
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD5N50NZF fdd5n50nzftm FDD5N50NZF PDF

    dpak mosfet

    Abstract: fairchild make f 32 diode
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD5N50NZF FDD5N50NZF dpak mosfet fairchild make f 32 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Ω Features Description • RDS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		FDD5N50NZ PDF