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    onsemi FDD3N50NZTM

    MOSFET N-CH 500V 2.5A DPAK
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    Fairchild Semiconductor Corporation FDD3N50NZTM

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    FDD3N50NZTM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD3N50NZTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V DPAK Original PDF

    FDD3N50NZTM Datasheets Context Search

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    dpak mosfet

    Abstract: FDD3N50NZ
    Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original     		FDD3N50NZ FDD3N50NZ dpak mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD3N50NZ PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Ω Features Description • RDS on = 2.1 Ω (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		FDD3N50NZ PDF

    FDD3N50NZTM

    Abstract: FDD3N50NZ
    Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5Ω Features Description • RDS on = 2.1Ω ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD3N50NZ FDD3N50NZTM FDD3N50NZ PDF

    N-Channel mosfet 500v 25A

    Abstract: FDD3N50NZTM dpak mosfet N-Channel mosfet 400v 25A
    Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDD3N50NZ FDD3N50NZ N-Channel mosfet 500v 25A FDD3N50NZTM dpak mosfet N-Channel mosfet 400v 25A PDF