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    FDB082N15A Search Results

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    FDB082N15A Price and Stock

    onsemi FDB082N15A

    MOSFET N-CH 150V 117A D2PAK
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    Fairchild Semiconductor Corporation FDB082N15A

    150 V, 105 A, 8.2 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA FDB082N15A 279
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    FDB082N15A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB082N15A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 105A D2PAK Original PDF

    FDB082N15A Datasheets Context Search

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    FDB082N15A

    Abstract: FDB08
    Text: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mΩ Features Description • RDS on = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB082N15A FDB082N15A FDB08

    Untitled

    Abstract: No abstract text available
    Text: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mW Features Description • RDS on = 6.7mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB082N15A FDB082N15A

    Untitled

    Abstract: No abstract text available
    Text: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDB082N15A

    Untitled

    Abstract: No abstract text available
    Text: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDB082N15A FDB082N15A