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    FDB075N15A Price and Stock

    onsemi FDB075N15A

    MOSFET N-CH 150V 130A D2PAK
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    DigiKey FDB075N15A Reel 1,600 800
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    onsemi FDB075N15A-F085

    MOSFET N-CH 150V 110A D2PAK
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    FDB075N15A-F085 Digi-Reel 1
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    FDB075N15A-F085 Cut Tape 1
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    Avnet Americas FDB075N15A-F085 Reel 0 Weeks, 2 Days 283
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    Flip Electronics FDB075N15A-F085

    MOSFET N-CH 150V 110A D2PAK
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    DigiKey FDB075N15A-F085 Reel 300
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    onsemi FDB075N15A-F085C

    MODULE
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    Win Source Electronics FDB075N15A-F085C 30,400
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    onsemi FDB075N15A_SN00284

    MOSFET N-CH 150V 130A D2PAK
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    FDB075N15A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB075N15A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 130A D2PAK Original PDF
    FDB075N15A_F085 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 110A D2PAK Original PDF
    FDB075N15A-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 110A D2PAK Original PDF

    FDB075N15A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications


    Original     		FDB075N15A O-263 PDF

    ISD 100

    Abstract: FDP075N15A
    Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP075N15A F102/FDB075N15A FDB075N15A ISD 100 PDF

    FDP075N15

    Abstract: FDP075N15A FDB075N15A
    Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS on = 6.25 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has


    Original     		FDP075N15A F102/FDB075N15A FDB075N15A FDB075N15A FDP075N15 PDF

    fdb075n15a

    Abstract: No abstract text available
    Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has


    Original     		FDP075N15A F102/FDB075N15A FDB075N15A FDB075N15A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS on = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP075N15A FDB075N15A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS on = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP075N15A FDB075N15A PDF

    FDB075N15A

    Abstract: No abstract text available
    Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP075N15A F102/FDB075N15A FDB075N15A FDB075N15A PDF