Q10A06
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10
FCQ10A
Q10A06
O-220AB
FCQ10A06
Q10A06
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FCQ10A06
Abstract: FCQ10
Text: SBD T y p e : FCQ10 FCQ10A Q10A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10
FCQ10A06
O-220AB
FCQ10A06
FCQ10
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FCQ10A04
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A04 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10
FCQ10A04
O-220AB
FCQ10A04
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A04 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10
FCQ10A
Q10A04
O-220AB
FCQ10A04
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FCQ10A04
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A04 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10A04
FCQ10
O-220AB
FCQ10A04
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FCQ10A06
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10A06
FCQ10
O-220AB
FCQ10A06
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jrc 5532
Abstract: jrc 5534 as4558 audio amplifier 4558 12v electronic transformer RECTIFIER 5532 JRC 4558 JRC JRC4558 bridge rectifier 12V 1A jrc 4558
Text: NIEC’s SBD and FRED for Audio Nihon Inter Electronics Corporation NIEC is a major manufacturer of Schottky Barrier Diode (SBD) and Fast Recovery Epitaxial Diode (FRED). Thanks to low dissipation, fast switching, and low noise characteristics, these fast switching diodes are widely used in Switching Mode Power Supply (SMPS) all over the
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FSQ05A04
jrc 5532
jrc 5534
as4558
audio amplifier 4558
12v electronic transformer RECTIFIER
5532 JRC
4558 JRC
JRC4558
bridge rectifier 12V 1A
jrc 4558
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCQ10A06 i o a /g o v 3.11.122 MAX FEATURES in .3 .4 0 S )_ H I.1 3 4 )„ . . m a x n / r s n T O U IA O Sim ilar to TO-220AB Case o Fully Molded Isolation o D ual Diodes - Cathode Common o L o w Forw ard V oltage Drop o Low Pow er Loss, High Efficiency
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FCQ10A06
O-220AB
FCQ10A.
bbl51BB
QQ02G55
bblS123
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FCQ10A04
Abstract: Schottky diode high reverse voltage ST Low Forward Voltage Schottky Diode
Text: SCHOTTKY BARRIER DIODE FCQ10A04 i0A/40v 3.11. L22 FEA TU R ES o Sim ilar to T0-220AB Case o Fully Molded Isolation o D ual Diodes - Cathode Common o L o w F orw ard Voltage Drop o L ow Pow er Loss, High Efficiency OHigh Surge Capability o Wire-Bonded technology
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OCR Scan
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i0A/40v
FCQ10A04
O-220AB
FCQ10A-
bbl5123
FCQ10A04
Schottky diode high reverse voltage
ST Low Forward Voltage Schottky Diode
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE ioa /sov FCQ10A03L 3.H.122 MAX FEATURES 10.31.4051 3 .4 I.1 3 4 U . . ^ / r ô ï â ) UIA o S im ila r to T 0-220A B C ase O F u lly M olded Iso la tio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C ath o d e C om m on
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FCQ10A03L
FCQ10A.
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCQ10A04 i0A /40v FEATURES o Sim ila r to T O -2 2 0 A B C ase o F u lly M olded Isolatio n o D u a l Diodes - Cathode Comm on o L o w F orw ard V o lta g e Drop o L o w P ow er L oss, H igh E fficien cy o H igh Su rg e C apability o W ire-Bond ed technology
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FCQ10A04
FCQ10A.
bbl5153
QGG2G24
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